Bipolar (BJT) - Arrays, Pre-Biased (2065)

Series:

-

Transistor Type:

1 PNP Pre-Biased, 1 PNP

Current - Collector (Ic) (Max):

100mA, 1.8A

Voltage - Collector Emitter Breakdown (Max):

50V, 20V

Resistor - Base (R1):

22kOhms

Resistor - Emitter Base (R2):

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

60 @ 5mA, 5V / 200 @ 1A, 2V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A

Current - Collector Cutoff (Max):

1µA, 100nA

Frequency - Transition:

130MHz

Power - Max:

760mW

Mounting Type:

Surface Mount

Package / Case:

SC-74, SOT-457

Supplier Device Package:

6-TSOP

Series:

-

Transistor Type:

1 NPN Pre-Biased, 1 PNP

Current - Collector (Ic) (Max):

100mA, 1.5A

Voltage - Collector Emitter Breakdown (Max):

50V, 60V

Resistor - Base (R1):

2.2kOhms

Resistor - Emitter Base (R2):

2.2kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 20mA, 5V / 140 @ 1A, 2V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA / 260mV @ 100mA, 1.5A

Current - Collector Cutoff (Max):

1µA, 100nA

Frequency - Transition:

150MHz

Power - Max:

760mW

Mounting Type:

Surface Mount

Package / Case:

SC-74, SOT-457

Supplier Device Package:

6-TSOP

Series:

-

Transistor Type:

1 PNP Pre-Biased, 1 PNP

Current - Collector (Ic) (Max):

100mA, 1.5A

Voltage - Collector Emitter Breakdown (Max):

50V, 60V

Resistor - Base (R1):

4.7kOhms

Resistor - Emitter Base (R2):

4.7kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 10mA, 5V / 140 @ 1A, 2V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA / 260mV @ 100mA, 1.5A

Current - Collector Cutoff (Max):

1µA, 100nA

Frequency - Transition:

150MHz

Power - Max:

760mW

Mounting Type:

Surface Mount

Package / Case:

SC-74, SOT-457

Supplier Device Package:

6-TSOP

Series:

-

Transistor Type:

1 NPN Pre-Biased, 1 PNP

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V, 60V

Resistor - Base (R1):

47kOhms

Resistor - Emitter Base (R2):

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

80 @ 5mA, 10V / 120 @ 1mA, 6V

Vce Saturation (Max) @ Ib, Ic:

250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

140MHz

Power - Max:

500mW

Mounting Type:

Surface Mount

Package / Case:

SOT-563, SOT-666

Supplier Device Package:

SOT-563

Series:

-

Transistor Type:

1 NPN Pre-Biased, 1 PNP

Current - Collector (Ic) (Max):

100mA, 500mA

Voltage - Collector Emitter Breakdown (Max):

50V, 12V

Resistor - Base (R1):

10kOhms

Resistor - Emitter Base (R2):

10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 5mA, 5V / 270 @ 10mA, 2V

Vce Saturation (Max) @ Ib, Ic:

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

250MHz, 260MHz

Power - Max:

150mW

Mounting Type:

Surface Mount

Package / Case:

SOT-563, SOT-666

Supplier Device Package:

EMT6

Series:

-

Transistor Type:

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

2.2kOhms

Resistor - Emitter Base (R2):

10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic:

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

-

Power - Max:

150mW

Mounting Type:

Surface Mount

Package / Case:

6-SMD (5 Leads), Flat Lead

Supplier Device Package:

SMini5-F3-B

Series:

-

Transistor Type:

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

22kOhms

Resistor - Emitter Base (R2):

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic:

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

-

Power - Max:

150mW

Mounting Type:

Surface Mount

Package / Case:

6-SMD (5 Leads), Flat Lead

Supplier Device Package:

SMini5-F3-B

Series:

-

Transistor Type:

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

1kOhms

Resistor - Emitter Base (R2):

10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic:

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

-

Power - Max:

150mW

Mounting Type:

Surface Mount

Package / Case:

6-SMD (5 Leads), Flat Lead

Supplier Device Package:

SMini5-F3-B

Series:

-

Transistor Type:

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

47kOhms

Resistor - Emitter Base (R2):

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic:

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

-

Power - Max:

150mW

Mounting Type:

Surface Mount

Package / Case:

5-SMD, Flat Leads

Supplier Device Package:

SMini5-F3-B

Series:

-

Transistor Type:

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

22kOhms

Resistor - Emitter Base (R2):

-

DC Current Gain (hFE) (Min) @ Ic, Vce:

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic:

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

-

Power - Max:

150mW

Mounting Type:

Surface Mount

Package / Case:

6-SMD, Flat Leads

Supplier Device Package:

SMini6-F3-B