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Bipolar (BJT) - Arrays, Pre-Biased (2065)

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Part Number:

PBLS4003V,115

Manufacturer:

NXP

Description:

TRANS NPN PREBIAS/PNP SOT666

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA, 500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V, 40V

  • Resistor - Base (R1):

    10kOhms

  • Resistor - Emitter Base (R2):

    10kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V / 150 @ 100mA. 2V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    300MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-666

Stock:

394

1

Part Number:

PBLS1502V,115

Manufacturer:

NXP

Description:

TRANS NPN PREBIAS/PNP SOT666

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA, 500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V, 15V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    4.7kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V / 150 @ 100mA, 2V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    1µA, 100nA

  • Frequency - Transition:

    280MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-666

Stock:

274

1

Part Number:

PBLS4001D,115

Manufacturer:

Nexperia

Description:

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA, 700mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V, 40V

  • Resistor - Base (R1):

    2.2kOhms

  • Resistor - Emitter Base (R2):

    2.2kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 20mA, 5V / 300 @ 100mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA / 310mV @ 100mA, 1A

  • Current - Collector Cutoff (Max):

    1µA, 100nA

  • Frequency - Transition:

    150MHz

  • Power - Max:

    600mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    6-TSOP

Stock:

202

1

Part Number:

PEMF21,115

Manufacturer:

Nexperia

Description:

TRANS NPN PREBIAS/PNP SOT666

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA, 500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V, 12V

  • Resistor - Base (R1):

    10kOhms

  • Resistor - Emitter Base (R2):

    10kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V / 200 @ 10mA, 2V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    280MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-666

Stock:

412

1

Part Number:

PBLS4005V,115

Manufacturer:

NXP

Description:

TRANS NPN PREBIAS/PNP SOT666

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA, 500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V, 40V

  • Resistor - Base (R1):

    47kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 5mA, 5V / 150 @ 100mA, 2V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    300MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-666

Stock:

403

1

Part Number:

PBLS4002D,115

Manufacturer:

Nexperia

Description:

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA, 700mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V, 40V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    4.7kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V / 300 @ 100mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA / 310mV @ 100mA, 1A

  • Current - Collector Cutoff (Max):

    1µA, 100nA

  • Frequency - Transition:

    150MHz

  • Power - Max:

    600mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    6-TSOP

Stock:

435

1
RN1706JE(TE85L,F)

Part Number:

RN1706JE(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.1W ESV

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual) (Emitter Coupled)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-553

  • Supplier Device Package:

    ESV

Stock:

426

1
RN4605(TE85L,F)

Part Number:

RN4605(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS NPN/PNP PREBIAS 0.3W SM6

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    2.2kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    SM6

Stock:

359

1

Part Number:

RN1503(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.3W SMV

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual) (Emitter Coupled)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    22kOhms

  • Resistor - Emitter Base (R2):

    22kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74A, SOT-753

  • Supplier Device Package:

    SMV

Stock:

430

1

Part Number:

DDA113TU-7-F

Manufacturer:

Diodes Incorporated

Description:

TRANS 2PNP PREBIAS 0.2W SOT363

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    1kOhms

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 1mA, 10mA

  • Current - Collector Cutoff (Max):

    -

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

413

1

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