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Bipolar (BJT) - Arrays, Pre-Biased (2065)

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Records 2065
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Part Number:

RN2907FE-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

22170

1

Part Number:

PIMN32PAX

Manufacturer:

Nexperia

Description:

PIMN32PA/SOT1118/HUSON6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 50mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 2.5mA, 50mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    210MHz

  • Power - Max:

    360mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-UFDFN Exposed Pad

  • Supplier Device Package:

    6-HUSON (2x2)

Stock:

9000

1

Part Number:

RN2709-LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

PNPX2 BRT Q1BSR22KOHM Q1BER47KOH

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    5-TSSOP, SC-70-5, SOT-353

  • Supplier Device Package:

    USV

Stock:

9000

1

Part Number:

PUMD10-QX

Manufacturer:

Nexperia

Description:

PUMD10-Q/SOT363/SC-88

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA

  • Frequency - Transition:

    230MHz, 180MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    6-TSSOP

Stock:

0

1

Part Number:

PUMD10-QH

Manufacturer:

Nexperia

Description:

PUMD10-Q/SOT363/SC-88

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA

  • Frequency - Transition:

    230MHz, 180MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    6-TSSOP

Stock:

0

1

Part Number:

PUMD10-QF

Manufacturer:

Nexperia

Description:

PUMD10-Q/SOT363/SC-88

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA

  • Frequency - Transition:

    230MHz, 180MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    6-TSSOP

Stock:

0

1

Part Number:

RN2901-LF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

18

1

Part Number:

DDA114EUQ-7-F

Manufacturer:

Diodes Incorporated

Description:

PREBIAS TRANSISTOR SOT363 T&R 3K

  • Series:

    DDA (XXXX) U

  • Transistor Type:

    2 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

RN2906-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

8700

1

Part Number:

DCX124EUQ-13R-F

Manufacturer:

Diodes Incorporated

Description:

PREBIAS TRANSISTOR SOT363 T&R 10

  • Series:

    DCX (XXXX) U

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    60 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

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