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Bipolar (BJT) - Arrays, Pre-Biased (2065)

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Records 2065
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Part Number:

RN4990-TE85L-F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

NPN + PNP BRT Q1BSR=4.7KOHM Q1BE

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz, 200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

270

1

Part Number:

RN4901FE-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q TR PNP+NPN Q1BSR=4.7K

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz, 250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

24000

1

Part Number:

RN4908-LF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

PNP + NPN BRT Q1BSR10KOHM Q1BER4

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz, 250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

9000

1

Part Number:

RN1905FE-LF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.1W ES6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

399

1

Part Number:

PIMN32-QX

Manufacturer:

Nexperia

Description:

TRANS PREBIAS 2NPN 50V 6TSOP

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 50mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 2.5mA, 50mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    225MHz

  • Power - Max:

    290mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    6-TSOP

Stock:

32850

1

Part Number:

RN4908FE-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz, 250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

24000

1

Part Number:

PIMN31PAX

Manufacturer:

Nexperia

Description:

PIMN31PA/SOT1118/HUSON6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 50mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 2.5mA, 50mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    210MHz

  • Power - Max:

    360mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-UFDFN Exposed Pad

  • Supplier Device Package:

    6-HUSON (2x2)

Stock:

9000

1

Part Number:

RN4985FE-LF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

NPN + PNP BRT Q1BSR2.2KOHM Q1BER

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz, 200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

777

1

Part Number:

PBLS6003D-QX

Manufacturer:

Nexperia

Description:

PBLS6003D-Q/SOT457/SC-74

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA, 700mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V, 60V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V / 200 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA / 340mV @ 100mA, 1A

  • Current - Collector Cutoff (Max):

    1µA, 100nA

  • Frequency - Transition:

    185MHz

  • Power - Max:

    200mW, 250mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    6-TSOP

Stock:

0

1

Part Number:

EMH13-TP

Manufacturer:

Micro Commercial Co

Description:

BIPOLAR TRANSISTORS

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    150mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

0

1

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