Transistors are fundamental semiconductor devices that act as electrically controlled switches or signal amplifiers within electronic circuits. By applying a small current or voltage to one terminal, they precisely regulate a much larger current flow between two other terminals.
Part Number:
2N6027RLRA
Manufacturer:
ON Semiconductor
Description:
THYRISTOR PROG UNIJUNCT 40V TO92
Series:
-
Voltage:
40V
Power Dissipation (Max):
300mW
Voltage - Output:
11V
Voltage - Offset (Vt):
1.6V
Current - Gate to Anode Leakage (Igao):
10nA
Current - Valley (Iv):
50µA
Current - Peak:
2µA
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock:
456
Part Number:
2N6027RLRAG
Manufacturer:
ON Semiconductor
Description:
THYRISTOR PROG UNIJUNCT 40V TO92
Series:
-
Voltage:
40V
Power Dissipation (Max):
300mW
Voltage - Output:
11V
Voltage - Offset (Vt):
1.6V
Current - Gate to Anode Leakage (Igao):
10nA
Current - Valley (Iv):
50µA
Current - Peak:
2µA
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock:
459
Part Number:
2N6028
Manufacturer:
Central Semiconductor Corp
Description:
PROGRAMMABLE UJT 40V TO226-3
Series:
-
Voltage:
40V
Power Dissipation (Max):
300mW
Voltage - Output:
6V
Voltage - Offset (Vt):
600mV
Current - Gate to Anode Leakage (Igao):
10nA
Current - Valley (Iv):
25µA
Current - Peak:
150nA
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Stock:
1420
Part Number:
2N6028G
Manufacturer:
ON Semiconductor
Description:
THYRISTOR PROG UNIJUNCT 40V TO92
Series:
-
Voltage:
40V
Power Dissipation (Max):
300mW
Voltage - Output:
11V
Voltage - Offset (Vt):
600mV
Current - Gate to Anode Leakage (Igao):
10nA
Current - Valley (Iv):
25µA
Current - Peak:
150nA
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Stock:
259
Part Number:
2N6028RLRA
Manufacturer:
ON Semiconductor
Description:
THYRISTOR PROG UNIJUNCT 40V TO92
Series:
-
Voltage:
40V
Power Dissipation (Max):
300mW
Voltage - Output:
11V
Voltage - Offset (Vt):
600mV
Current - Gate to Anode Leakage (Igao):
10nA
Current - Valley (Iv):
25µA
Current - Peak:
150nA
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock:
164
Part Number:
2N6028RLRAG
Manufacturer:
ON Semiconductor
Description:
THYRISTOR PROG UNIJUNCT 40V TO92
Series:
-
Voltage:
40V
Power Dissipation (Max):
300mW
Voltage - Output:
11V
Voltage - Offset (Vt):
600mV
Current - Gate to Anode Leakage (Igao):
10nA
Current - Valley (Iv):
25µA
Current - Peak:
150nA
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock:
412
Part Number:
2N6028RLRMG
Manufacturer:
ON Semiconductor
Description:
THYRISTOR PROG UNIJUNCT 40V TO92
Series:
-
Voltage:
40V
Power Dissipation (Max):
300mW
Voltage - Output:
11V
Voltage - Offset (Vt):
600mV
Current - Gate to Anode Leakage (Igao):
10nA
Current - Valley (Iv):
25µA
Current - Peak:
150nA
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock:
213
Part Number:
2N6028RLRP
Manufacturer:
ON Semiconductor
Description:
THYRISTOR PROG UNIJUNCT 40V TO92
Series:
-
Voltage:
40V
Power Dissipation (Max):
300mW
Voltage - Output:
11V
Voltage - Offset (Vt):
600mV
Current - Gate to Anode Leakage (Igao):
10nA
Current - Valley (Iv):
25µA
Current - Peak:
150nA
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock:
346
Part Number:
2N6028RLRPG
Manufacturer:
ON Semiconductor
Description:
THYRISTOR PROG UNIJUNCT 40V TO92
Series:
-
Voltage:
40V
Power Dissipation (Max):
300mW
Voltage - Output:
11V
Voltage - Offset (Vt):
600mV
Current - Gate to Anode Leakage (Igao):
10nA
Current - Valley (Iv):
25µA
Current - Peak:
150nA
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Stock:
170
Manufacturer:
Central Semiconductor Corp
Description:
PROGRAMMABLE UJT SOT-23
Series:
-
Voltage:
40V
Power Dissipation (Max):
167mW
Voltage - Output:
6V
Voltage - Offset (Vt):
1.6V
Current - Gate to Anode Leakage (Igao):
10nA
Current - Valley (Iv):
50µA
Current - Peak:
2µA
Package / Case:
TO-236-3, SC-59, SOT-23-3
Stock:
374
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