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Transistors (92295)

Transistors are fundamental semiconductor devices that act as electrically controlled switches or signal amplifiers within electronic circuits. By applying a small current or voltage to one terminal, they precisely regulate a much larger current flow between two other terminals.

Records 92295
Page 9211/9230
2N4851

Part Number:

Manufacturer:

Central Semiconductor Corp

Description:

THROUGH-HOLE UJT

  • Series:

    -

  • Voltage:

    -

  • Power Dissipation (Max):

    300mW

  • Voltage - Output:

    3V

  • Voltage - Offset (Vt):

    -

  • Current - Gate to Anode Leakage (Igao):

    -

  • Current - Valley (Iv):

    2mA

  • Current - Peak:

    2µA

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

Stock:

220

1
2N4852

Part Number:

Manufacturer:

Central Semiconductor Corp

Description:

THROUGH-HOLE UJT

  • Series:

    -

  • Voltage:

    -

  • Power Dissipation (Max):

    300mW

  • Voltage - Output:

    5V

  • Voltage - Offset (Vt):

    -

  • Current - Gate to Anode Leakage (Igao):

    -

  • Current - Valley (Iv):

    4mA

  • Current - Peak:

    2µA

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

Stock:

262

1
2N4853

Part Number:

Manufacturer:

Central Semiconductor Corp

Description:

THROUGH-HOLE UJT

  • Series:

    -

  • Voltage:

    -

  • Power Dissipation (Max):

    300mW

  • Voltage - Output:

    6V

  • Voltage - Offset (Vt):

    -

  • Current - Gate to Anode Leakage (Igao):

    -

  • Current - Valley (Iv):

    6mA

  • Current - Peak:

    400nA

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

Stock:

346

1
2N4948

Part Number:

Manufacturer:

Central Semiconductor Corp

Description:

THROUGH-HOLE UJT

  • Series:

    -

  • Voltage:

    -

  • Power Dissipation (Max):

    -

  • Voltage - Output:

    6V

  • Voltage - Offset (Vt):

    -

  • Current - Gate to Anode Leakage (Igao):

    -

  • Current - Valley (Iv):

    2mA

  • Current - Peak:

    2µA

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

Stock:

386

1
2N4949

Part Number:

Manufacturer:

Central Semiconductor Corp

Description:

THROUGH-HOLE UJT

  • Series:

    -

  • Voltage:

    -

  • Power Dissipation (Max):

    -

  • Voltage - Output:

    3V

  • Voltage - Offset (Vt):

    -

  • Current - Gate to Anode Leakage (Igao):

    -

  • Current - Valley (Iv):

    2mA

  • Current - Peak:

    1µA

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

Stock:

407

1
2N5431

Part Number:

Manufacturer:

Central Semiconductor Corp

Description:

THROUGH-HOLE UJT

  • Series:

    -

  • Voltage:

    -

  • Power Dissipation (Max):

    -

  • Voltage - Output:

    1V

  • Voltage - Offset (Vt):

    -

  • Current - Gate to Anode Leakage (Igao):

    -

  • Current - Valley (Iv):

    2mA

  • Current - Peak:

    400nA

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

Stock:

109

1
2N6027

Part Number:

2N6027

Manufacturer:

Central Semiconductor Corp

Description:

PROGRAMMABLE UJT 40V TO226-3

  • Series:

    -

  • Voltage:

    40V

  • Power Dissipation (Max):

    300mW

  • Voltage - Output:

    6V

  • Voltage - Offset (Vt):

    1.6V

  • Current - Gate to Anode Leakage (Igao):

    10nA

  • Current - Valley (Iv):

    50µA

  • Current - Peak:

    2µA

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA)

Stock:

163

1
2N6027G

Part Number:

2N6027G

Manufacturer:

ON Semiconductor

Description:

TRANS PROG UNIJUNCT 40V TO92

  • Series:

    -

  • Voltage:

    40V

  • Power Dissipation (Max):

    300mW

  • Voltage - Output:

    11V

  • Voltage - Offset (Vt):

    1.6V

  • Current - Gate to Anode Leakage (Igao):

    10nA

  • Current - Valley (Iv):

    50µA

  • Current - Peak:

    2µA

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA)

Stock:

402

1
2N6027RL1

Part Number:

2N6027RL1

Manufacturer:

ON Semiconductor

Description:

THYRISTOR PROG UNIJUNCT 40V TO92

  • Series:

    -

  • Voltage:

    40V

  • Power Dissipation (Max):

    300mW

  • Voltage - Output:

    11V

  • Voltage - Offset (Vt):

    1.6V

  • Current - Gate to Anode Leakage (Igao):

    10nA

  • Current - Valley (Iv):

    50µA

  • Current - Peak:

    2µA

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock:

279

1
2N6027RL1G

Part Number:

2N6027RL1G

Manufacturer:

ON Semiconductor

Description:

THYRISTOR PROG UNIJUNCT 40V TO92

  • Series:

    -

  • Voltage:

    40V

  • Power Dissipation (Max):

    300mW

  • Voltage - Output:

    11V

  • Voltage - Offset (Vt):

    1.6V

  • Current - Gate to Anode Leakage (Igao):

    10nA

  • Current - Valley (Iv):

    50µA

  • Current - Peak:

    2µA

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock:

337

1

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