Logo

Rectifiers - Single (53791)

Records 0
Reset All
Records 53791
Page 5370/5380

Part Number:

S3D50065G

Manufacturer:

SMC Diode Solutions

Description:

DIODE SCHOTTKY SILICON CARBIDE S

  • Series:

    -

  • Diode Type:

    SiC (Silicon Carbide) Schottky

  • Voltage - DC Reverse (Vr) (Max):

    650 V

  • Current - Average Rectified (Io):

    112A

  • Voltage - Forward (Vf) (Max) @ If:

    1.7 V @ 50 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    40 µA @ 650 V

  • Capacitance @ Vr, F:

    3120pF @ 0V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

  • Supplier Device Package:

    TO-263-2

  • Operating Temperature - Junction:

    -55°C ~ 175°C

Stock:

2049

1

Part Number:

WNSC12650T6J

Manufacturer:

WeEn Semiconductors

Description:

DIODE SIL CARBIDE 650V 12A 5DFN

  • Series:

    -

  • Diode Type:

    SiC (Silicon Carbide) Schottky

  • Voltage - DC Reverse (Vr) (Max):

    650 V

  • Current - Average Rectified (Io):

    12A

  • Voltage - Forward (Vf) (Max) @ If:

    1.8 V @ 12 A

  • Speed:

    No Recovery Time > 500mA (Io)

  • Reverse Recovery Time (trr):

    0 ns

  • Current - Reverse Leakage @ Vr:

    60 µA @ 650 V

  • Capacitance @ Vr, F:

    328pF @ 1V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    4-VSFN Exposed Pad

  • Supplier Device Package:

    5-DFN (8x8)

  • Operating Temperature - Junction:

    175°C

Stock:

8994

1

Part Number:

SR10100L-TP

Manufacturer:

Micro Commercial Co

Description:

Interface

  • Series:

    -

  • Diode Type:

    Schottky

  • Voltage - DC Reverse (Vr) (Max):

    100 V

  • Current - Average Rectified (Io):

    10A

  • Voltage - Forward (Vf) (Max) @ If:

    750 mV @ 10 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    200 µA @ 100 V

  • Capacitance @ Vr, F:

    700pF @ 4V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    DO-201AD, Axial

  • Supplier Device Package:

    DO-201AD

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

0

1

Part Number:

JANTXV1N4249-TR

Manufacturer:

Microchip Technology

Description:

DIODE GEN PURP 1KV 1A

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    1000 V

  • Current - Average Rectified (Io):

    1A

  • Voltage - Forward (Vf) (Max) @ If:

    1.3 V @ 3 A

  • Speed:

    Standard Recovery >500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    5 µs

  • Current - Reverse Leakage @ Vr:

    1 µA @ 1 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Through Hole

  • Package / Case:

    A, Axial

  • Supplier Device Package:

    A, Axial

  • Operating Temperature - Junction:

    -65°C ~ 175°C

Stock:

0

1

Part Number:

BAV20WHE3-TP

Manufacturer:

Micro Commercial Co

Description:

DIODE GEN PURP 150V 250MA SOD123

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    150 V

  • Current - Average Rectified (Io):

    250mA

  • Voltage - Forward (Vf) (Max) @ If:

    1.25 V @ 200 mA

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    50 ns

  • Current - Reverse Leakage @ Vr:

    100 nA @ 150 V

  • Capacitance @ Vr, F:

    1.5pF @ 0V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOD-123

  • Supplier Device Package:

    SOD-123

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

35970

1

Part Number:

SM5818PLHE3-TP

Manufacturer:

Micro Commercial Co

Description:

Interface

  • Series:

    -

  • Diode Type:

    Schottky

  • Voltage - DC Reverse (Vr) (Max):

    20 V

  • Current - Average Rectified (Io):

    1A

  • Voltage - Forward (Vf) (Max) @ If:

    450 mV @ 1 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    50 µA @ 20 V

  • Capacitance @ Vr, F:

    50pF @ 4V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOD-123F

  • Supplier Device Package:

    SOD-123FL

  • Operating Temperature - Junction:

    -65°C ~ 125°C

Stock:

0

1

Part Number:

SS215LH

Manufacturer:

Taiwan Semiconductor Corporation

Description:

2A, 150V, SCHOTTKY RECTIFIER

  • Series:

    -

  • Diode Type:

    Schottky

  • Voltage - DC Reverse (Vr) (Max):

    150 V

  • Current - Average Rectified (Io):

    2A

  • Voltage - Forward (Vf) (Max) @ If:

    950 mV @ 2 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    100 µA @ 150 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOD-123

  • Supplier Device Package:

    Sub SMA

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

0

1

Part Number:

SS215LW

Manufacturer:

Taiwan Semiconductor Corporation

Description:

DIODE SCHOTTKY 150V 2A SOD123W

  • Series:

    -

  • Diode Type:

    Schottky

  • Voltage - DC Reverse (Vr) (Max):

    150 V

  • Current - Average Rectified (Io):

    2A

  • Voltage - Forward (Vf) (Max) @ If:

    950 mV @ 2 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    10 µA @ 150 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOD-123W

  • Supplier Device Package:

    SOD-123W

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

77865

1

Part Number:

SBRT3U45SAQ-13

Manufacturer:

Diodes Incorporated

Description:

DIODE SBR 45V 3A SMA

  • Series:

    TrenchSBR

  • Diode Type:

    Super Barrier

  • Voltage - DC Reverse (Vr) (Max):

    45 V

  • Current - Average Rectified (Io):

    3A

  • Voltage - Forward (Vf) (Max) @ If:

    480 mV @ 3 A

  • Speed:

    Standard Recovery >500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    150 µA @ 45 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Surface Mount

  • Package / Case:

    DO-214AC, SMA

  • Supplier Device Package:

    SMA

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

0

1

Part Number:

MSC030SDA120BCT

Manufacturer:

Microchip Technology

Description:

DIODE SIL CARB 1.2KV 65A TO247-3

  • Series:

    -

  • Diode Type:

    SiC (Silicon Carbide) Schottky

  • Voltage - DC Reverse (Vr) (Max):

    1200 V

  • Current - Average Rectified (Io):

    65A

  • Voltage - Forward (Vf) (Max) @ If:

    1.8 V @ 30 A

  • Speed:

    No Recovery Time > 500mA (Io)

  • Reverse Recovery Time (trr):

    0 ns

  • Current - Reverse Leakage @ Vr:

    200 µA @ 1200 V

  • Capacitance @ Vr, F:

    141pF @ 400V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247-3

  • Operating Temperature - Junction:

    -55°C ~ 175°C

Stock:

222

1

获取最新资讯

每日获取来自全球众多供应商的最新优惠资讯