Part Number:
S3D50065G
Manufacturer:
SMC Diode Solutions
Description:
DIODE SCHOTTKY SILICON CARBIDE S
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
112A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 50 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
40 µA @ 650 V
Capacitance @ Vr, F:
3120pF @ 0V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package:
TO-263-2
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
2049
Part Number:
WNSC12650T6J
Manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARBIDE 650V 12A 5DFN
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
12A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 12 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
60 µA @ 650 V
Capacitance @ Vr, F:
328pF @ 1V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
4-VSFN Exposed Pad
Supplier Device Package:
5-DFN (8x8)
Operating Temperature - Junction:
175°C
Stock:
8994
Part Number:
SR10100L-TP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
750 mV @ 10 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
200 µA @ 100 V
Capacitance @ Vr, F:
700pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
DO-201AD, Axial
Supplier Device Package:
DO-201AD
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
JANTXV1N4249-TR
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 1KV 1A
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 3 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
5 µs
Current - Reverse Leakage @ Vr:
1 µA @ 1 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
A, Axial
Supplier Device Package:
A, Axial
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
BAV20WHE3-TP
Manufacturer:
Micro Commercial Co
Description:
DIODE GEN PURP 150V 250MA SOD123
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
250mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 200 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
100 nA @ 150 V
Capacitance @ Vr, F:
1.5pF @ 0V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SOD-123
Supplier Device Package:
SOD-123
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
35970
Part Number:
SM5818PLHE3-TP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
20 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
450 mV @ 1 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
50 µA @ 20 V
Capacitance @ Vr, F:
50pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SOD-123F
Supplier Device Package:
SOD-123FL
Operating Temperature - Junction:
-65°C ~ 125°C
Stock:
0
Part Number:
SS215LH
Manufacturer:
Taiwan Semiconductor Corporation
Description:
2A, 150V, SCHOTTKY RECTIFIER
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 µA @ 150 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
SOD-123
Supplier Device Package:
Sub SMA
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
SS215LW
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE SCHOTTKY 150V 2A SOD123W
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 µA @ 150 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
SOD-123W
Supplier Device Package:
SOD-123W
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
77865
Part Number:
SBRT3U45SAQ-13
Manufacturer:
Diodes Incorporated
Description:
DIODE SBR 45V 3A SMA
Series:
TrenchSBR
Diode Type:
Super Barrier
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
480 mV @ 3 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
150 µA @ 45 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
DO-214AC, SMA
Supplier Device Package:
SMA
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
MSC030SDA120BCT
Manufacturer:
Microchip Technology
Description:
DIODE SIL CARB 1.2KV 65A TO247-3
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
65A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 30 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
200 µA @ 1200 V
Capacitance @ Vr, F:
141pF @ 400V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
TO-247-3
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
222
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