Part Number:
JANTXV1N6622-TR
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 660V 1.2A
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
660 V
Current - Average Rectified (Io):
1.2A
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1.2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
30 ns
Current - Reverse Leakage @ Vr:
500 nA @ 660 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
A, Axial
Supplier Device Package:
A, Axial
Operating Temperature - Junction:
-65°C ~ 150°C
Stock:
0
Part Number:
1N456-TR
Manufacturer:
Microchip Technology
Description:
SIGNAL OR COMPUTER DIODE
Series:
-
Diode Type:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-
Stock:
0
Part Number:
JANTX1N6942UTK3AS-TR
Manufacturer:
Microchip Technology
Description:
DIODE SCHOTTKY 45V 150A THINKEY3
Series:
-
Diode Type:
Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
150A
Voltage - Forward (Vf) (Max) @ If:
460 mV @ 50 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 mA @ 45 V
Capacitance @ Vr, F:
7000pF @ 5V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
ThinKey™3
Supplier Device Package:
ThinKey™3
Operating Temperature - Junction:
-65°C ~ 150°C
Stock:
0
Part Number:
CD0-2A30
Manufacturer:
Microchip Technology
Description:
DIODE SCHOTTKY 30V 200MA DIE
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
500 mV @ 200 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 µA @ 30 V
Capacitance @ Vr, F:
50pF @ 0V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Operating Temperature - Junction:
-65°C ~ 125°C
Stock:
0
Part Number:
CD0-2A40
Manufacturer:
Microchip Technology
Description:
DIODE SCHOTTKY 40V 200MA DIE
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
500 mV @ 200 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 µA @ 40 V
Capacitance @ Vr, F:
50pF @ 0V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Operating Temperature - Junction:
-65°C ~ 125°C
Stock:
0
Part Number:
SF2004PTH
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 200V 20A TO247AD
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 20 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
35 ns
Current - Reverse Leakage @ Vr:
10 µA @ 200 V
Capacitance @ Vr, F:
175pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
TO-247AD (TO-3P)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
2700
Part Number:
CD0-2A20
Manufacturer:
Microchip Technology
Description:
DIODE SCHOTTKY 20V 200MA DIE
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
20 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
500 mV @ 200 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 µA @ 20 V
Capacitance @ Vr, F:
50pF @ 0V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Operating Temperature - Junction:
-65°C ~ 125°C
Stock:
0
Part Number:
SD101CWS-7-F-79
Manufacturer:
Diodes Incorporated
Description:
DIODE SCHOTTKY 40V 15MA SOD323
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
15mA
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 15 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
1 ns
Current - Reverse Leakage @ Vr:
200 nA @ 30 V
Capacitance @ Vr, F:
2.2pF @ 0V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SC-76, SOD-323
Supplier Device Package:
SOD-323
Operating Temperature - Junction:
-65°C ~ 125°C
Stock:
0
Part Number:
HER605GH
Manufacturer:
Taiwan Semiconductor Corporation
Description:
50NS, 6A, 400V, HIGH EFFICIENT R
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
6A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 6 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 400 V
Capacitance @ Vr, F:
80pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
R-6, Axial
Supplier Device Package:
R-6
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
R42100BF
Manufacturer:
Microchip Technology
Description:
DIODE GP REV 1KV 125A DO205AA
Series:
-
Diode Type:
Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
125A
Voltage - Forward (Vf) (Max) @ If:
1.2 V @ 200 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
50 µA @ 1000 V
Capacitance @ Vr, F:
-
Mounting Type:
Stud Mount
Package / Case:
DO-205AA, DO-8, Stud
Supplier Device Package:
DO-205AA (DO-8)
Operating Temperature - Junction:
-65°C ~ 200°C
Stock:
0
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