Part Number:
WNSC2D2012006Q
Manufacturer:
WeEn Semiconductors
Description:
WNSC2D201200/SOD59A/STANDARD MAR
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
1.65 V @ 20 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
100 µA @ 1200 V
Capacitance @ Vr, F:
950pF @ 1V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-220-2
Supplier Device Package:
TO-220AC
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
BAT43WS
Manufacturer:
Taiwan Semiconductor Corporation
Description:
SOD-323F, 30V, 0.2A, SCHOTTKY DI
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 200 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
5 ns
Current - Reverse Leakage @ Vr:
500 nA @ 25 V
Capacitance @ Vr, F:
7pF @ 1V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SC-90, SOD-323F
Supplier Device Package:
SOD-323F
Operating Temperature - Junction:
-65°C ~ 125°C
Stock:
0
Part Number:
JANTX1N5554-TR
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 1KV 5A
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
5A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 9 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
2 µs
Current - Reverse Leakage @ Vr:
2 µA @ 1 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
B, Axial
Supplier Device Package:
B, Axial
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
LSR106-J0-L0
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE SCHOTTKY 60V 1A MELF
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
60 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
700 mV @ 1 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
1 mA @ 60 V
Capacitance @ Vr, F:
80pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-213AB, MELF
Supplier Device Package:
MELF
Operating Temperature - Junction:
-65°C ~ 150°C
Stock:
0
Part Number:
SRAS2040H
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE SCHOTTKY 40V 20A TO263AB
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
570 mV @ 20 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 µA @ 40 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package:
TO-263AB (D2PAK)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
RB160QS-40T18R
Manufacturer:
Rohm Semiconductor
Description:
DIODE SCHOTTKY 40V 1.5A SMD1006
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
1.5A
Voltage - Forward (Vf) (Max) @ If:
650 mV @ 1.5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
20 µA @ 40 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
2-SMD, No Lead
Supplier Device Package:
SMD1006
Operating Temperature - Junction:
150°C
Stock:
169578
Part Number:
UES1106SM-1
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 400V 2A A SQ-MELF
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 1 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 400 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
SQ-MELF, A
Supplier Device Package:
A, SQ-MELF
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
HER304G-TP
Manufacturer:
Micro Commercial Co
Description:
DIODE GEN PURP 300V 3A DO201AD
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
300 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 300 V
Capacitance @ Vr, F:
80pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
DO-201AD, Axial
Supplier Device Package:
DO-201AD
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
SBR6035PF
Manufacturer:
Microchip Technology
Description:
DIODE SCHOTTKY 35V 60A DO21
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
35 V
Current - Average Rectified (Io):
60A
Voltage - Forward (Vf) (Max) @ If:
600 mV @ 60 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
Press Fit
Package / Case:
DO-208AA
Supplier Device Package:
DO-21
Operating Temperature - Junction:
-65°C ~ 150°C
Stock:
0
Part Number:
SRAS2060H
Manufacturer:
Taiwan Semiconductor Corporation
Description:
20A, 60V, SCHOTTKY RECTIFIER
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
60 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
700 mV @ 20 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 µA @ 60 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package:
TO-263AB (D2PAK)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
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