Part Number:
BAT42WS
Manufacturer:
Taiwan Semiconductor Corporation
Description:
SOD-323F, 30V, 0.2A, SCHOTTKY DI
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 200 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
5 ns
Current - Reverse Leakage @ Vr:
500 nA @ 25 V
Capacitance @ Vr, F:
7pF @ 1V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SC-90, SOD-323F
Supplier Device Package:
SOD-323F
Operating Temperature - Junction:
-65°C ~ 125°C
Stock:
0
Part Number:
WNSC2D201200WQ
Manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARB 1.2KV 20A TO247-2
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 20 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
200 µA @ 1200 V
Capacitance @ Vr, F:
845pF @ 1V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-247-2
Supplier Device Package:
TO-247-2
Operating Temperature - Junction:
175°C
Stock:
6804
Part Number:
CLL4448-TR-PBFREE
Manufacturer:
Central Semiconductor Corp
Description:
DIODE GEN PURP 75V 250MA SOD80
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
75 V
Current - Average Rectified (Io):
250mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 100 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
4 ns
Current - Reverse Leakage @ Vr:
25 nA @ 20 V
Capacitance @ Vr, F:
4pF @ 0V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-213AC, MINI-MELF, SOD-80
Supplier Device Package:
SOD-80
Operating Temperature - Junction:
-65°C ~ 200°C
Stock:
54408
Part Number:
SS32-V7G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE SCHOTTKY 20V 3A DO214AB
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
20 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 µA @ 20 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
DO-214AB, SMC
Supplier Device Package:
DO-214AB (SMC)
Operating Temperature - Junction:
-55°C ~ 125°C
Stock:
0
Part Number:
SS32-V6G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE SCHOTTKY 20V 3A DO214AB
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
20 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 µA @ 20 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
DO-214AB, SMC
Supplier Device Package:
DO-214AB (SMC)
Operating Temperature - Junction:
-55°C ~ 125°C
Stock:
0
Part Number:
ST3045SAX-D
Manufacturer:
SMC Diode Solutions
Description:
TRENCH SCHOTTKY DIODE 45V 30A R-
Series:
-
Diode Type:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
R-6, Axial
Supplier Device Package:
R-6
Operating Temperature - Junction:
-
Stock:
3000
Part Number:
ST3045SAX-C
Manufacturer:
SMC Diode Solutions
Description:
TRENCH SCHOTTKY DIODE 45V 30A R-
Series:
-
Diode Type:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
R-6, Axial
Supplier Device Package:
R-6
Operating Temperature - Junction:
-
Stock:
3000
Part Number:
MSC050SDA120B
Manufacturer:
Microchip Technology
Description:
DIODE SIC 1.2KV 109A TO247-3
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
109A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 50 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
200 µA @ 1200 V
Capacitance @ Vr, F:
246pF @ 400V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
TO-247-3
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
225
Part Number:
MSC050SDA120S
Manufacturer:
Microchip Technology
Description:
DIODE SIL CARB 1.2KV 50A D3PAK
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
50A
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package:
D3PAK
Operating Temperature - Junction:
-
Stock:
171
Part Number:
1N6700US-TR
Manufacturer:
Microchip Technology
Description:
SMALL-SIGNAL SCHOTTKY
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
20 V
Current - Average Rectified (Io):
5A
Voltage - Forward (Vf) (Max) @ If:
470 mV @ 5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
200 µA @ 20 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
SQ-MELF, C
Supplier Device Package:
D-5C
Operating Temperature - Junction:
-65°C ~ 125°C
Stock:
0
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