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Part Number:

1N6818R

Manufacturer:

Microchip Technology

Description:

DIODE SCHOTTKY 45V 75A THINKEY3

  • Series:

    -

  • Diode Type:

    Schottky, Reverse Polarity

  • Voltage - DC Reverse (Vr) (Max):

    45 V

  • Current - Average Rectified (Io):

    75A

  • Voltage - Forward (Vf) (Max) @ If:

    650 mV @ 75 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    7.5 mA @ 45 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Surface Mount

  • Package / Case:

    ThinKey™3

  • Supplier Device Package:

    ThinKey™3

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

0

1

Part Number:

JANTX1N4946-TR

Manufacturer:

Microchip Technology

Description:

DIODE GEN PURP 600V 1A

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    600 V

  • Current - Average Rectified (Io):

    1A

  • Voltage - Forward (Vf) (Max) @ If:

    1.3 V @ 1 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    250 ns

  • Current - Reverse Leakage @ Vr:

    1 µA @ 600 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Through Hole

  • Package / Case:

    A, Axial

  • Supplier Device Package:

    A, Axial

  • Operating Temperature - Junction:

    -65°C ~ 175°C

Stock:

0

1

Part Number:

HERA808G

Manufacturer:

Taiwan Semiconductor Corporation

Description:

DIODE GEN PURP 8A TO220AC

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    1000 V

  • Current - Average Rectified (Io):

    8A

  • Voltage - Forward (Vf) (Max) @ If:

    1.7 V @ 8 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    80 ns

  • Current - Reverse Leakage @ Vr:

    10 µA @ 1000 V

  • Capacitance @ Vr, F:

    55pF @ 4V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-220-2

  • Supplier Device Package:

    TO-220AC

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

0

1

Part Number:

HERA807G

Manufacturer:

Taiwan Semiconductor Corporation

Description:

DIODE GEN PURP 800V 8A TO220AC

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    800 V

  • Current - Average Rectified (Io):

    8A

  • Voltage - Forward (Vf) (Max) @ If:

    1.7 V @ 8 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    80 ns

  • Current - Reverse Leakage @ Vr:

    10 µA @ 800 V

  • Capacitance @ Vr, F:

    55pF @ 4V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-220-2

  • Supplier Device Package:

    TO-220AC

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

3000

1

Part Number:

HERA806G

Manufacturer:

Taiwan Semiconductor Corporation

Description:

DIODE GEN PURP 600V 8A TO220AC

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    600 V

  • Current - Average Rectified (Io):

    8A

  • Voltage - Forward (Vf) (Max) @ If:

    1.7 V @ 8 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    80 ns

  • Current - Reverse Leakage @ Vr:

    10 µA @ 600 V

  • Capacitance @ Vr, F:

    55pF @ 4V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-220-2

  • Supplier Device Package:

    TO-220AC

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

3000

1

Part Number:

HERA805G

Manufacturer:

Taiwan Semiconductor Corporation

Description:

DIODE GEN PURP 400V 8A TO220AC

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    400 V

  • Current - Average Rectified (Io):

    8A

  • Voltage - Forward (Vf) (Max) @ If:

    1.3 V @ 8 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    50 ns

  • Current - Reverse Leakage @ Vr:

    10 µA @ 400 V

  • Capacitance @ Vr, F:

    65pF @ 4V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-220-2

  • Supplier Device Package:

    TO-220AC

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

3000

1

Part Number:

HERA804G

Manufacturer:

Taiwan Semiconductor Corporation

Description:

DIODE GEN PURP 300V 8A TO220AC

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    300 V

  • Current - Average Rectified (Io):

    8A

  • Voltage - Forward (Vf) (Max) @ If:

    1 V @ 8 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    50 ns

  • Current - Reverse Leakage @ Vr:

    10 µA @ 300 V

  • Capacitance @ Vr, F:

    65pF @ 4V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-220-2

  • Supplier Device Package:

    TO-220AC

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

3000

1

Part Number:

JANTX1N645-1-TR

Manufacturer:

Microchip Technology

Description:

DIODE GEN PURP 225V 400MA DO35

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    225 V

  • Current - Average Rectified (Io):

    400mA

  • Voltage - Forward (Vf) (Max) @ If:

    1 V @ 400 mA

  • Speed:

    Standard Recovery >500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    50 nA @ 225 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Through Hole

  • Package / Case:

    DO-204AH, DO-35, Axial

  • Supplier Device Package:

    DO-35

  • Operating Temperature - Junction:

    -65°C ~ 175°C

Stock:

0

1

Part Number:

HERA803G

Manufacturer:

Taiwan Semiconductor Corporation

Description:

DIODE GEN PURP 200V 8A TO220AC

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    200 V

  • Current - Average Rectified (Io):

    8A

  • Voltage - Forward (Vf) (Max) @ If:

    1 V @ 8 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    50 ns

  • Current - Reverse Leakage @ Vr:

    10 µA @ 200 V

  • Capacitance @ Vr, F:

    65pF @ 4V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-220-2

  • Supplier Device Package:

    TO-220AC

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

0

1

Part Number:

FR606GP-TP

Manufacturer:

Micro Commercial Co

Description:

DIODE GEN PURP 800V 6A R-6

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    800 V

  • Current - Average Rectified (Io):

    6A

  • Voltage - Forward (Vf) (Max) @ If:

    1.3 V @ 6 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    500 ns

  • Current - Reverse Leakage @ Vr:

    10 µA @ 800 V

  • Capacitance @ Vr, F:

    150pF @ 4V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    R-6, Axial

  • Supplier Device Package:

    R-6

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

0

1

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