Part Number:
1N6818R
Manufacturer:
Microchip Technology
Description:
DIODE SCHOTTKY 45V 75A THINKEY3
Series:
-
Diode Type:
Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
75A
Voltage - Forward (Vf) (Max) @ If:
650 mV @ 75 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
7.5 mA @ 45 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
ThinKey™3
Supplier Device Package:
ThinKey™3
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
JANTX1N4946-TR
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 600V 1A
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 1 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
250 ns
Current - Reverse Leakage @ Vr:
1 µA @ 600 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
A, Axial
Supplier Device Package:
A, Axial
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
HERA808G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 8A TO220AC
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
80 ns
Current - Reverse Leakage @ Vr:
10 µA @ 1000 V
Capacitance @ Vr, F:
55pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-220-2
Supplier Device Package:
TO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
HERA807G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 800V 8A TO220AC
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
80 ns
Current - Reverse Leakage @ Vr:
10 µA @ 800 V
Capacitance @ Vr, F:
55pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-220-2
Supplier Device Package:
TO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
3000
Part Number:
HERA806G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 600V 8A TO220AC
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
80 ns
Current - Reverse Leakage @ Vr:
10 µA @ 600 V
Capacitance @ Vr, F:
55pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-220-2
Supplier Device Package:
TO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
3000
Part Number:
HERA805G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 400V 8A TO220AC
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 400 V
Capacitance @ Vr, F:
65pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-220-2
Supplier Device Package:
TO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
3000
Part Number:
HERA804G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 300V 8A TO220AC
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
300 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 300 V
Capacitance @ Vr, F:
65pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-220-2
Supplier Device Package:
TO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
3000
Part Number:
JANTX1N645-1-TR
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 225V 400MA DO35
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
225 V
Current - Average Rectified (Io):
400mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 400 mA
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
50 nA @ 225 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
DO-204AH, DO-35, Axial
Supplier Device Package:
DO-35
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
HERA803G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 200V 8A TO220AC
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1 V @ 8 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
10 µA @ 200 V
Capacitance @ Vr, F:
65pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-220-2
Supplier Device Package:
TO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
FR606GP-TP
Manufacturer:
Micro Commercial Co
Description:
DIODE GEN PURP 800V 6A R-6
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
6A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 6 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
500 ns
Current - Reverse Leakage @ Vr:
10 µA @ 800 V
Capacitance @ Vr, F:
150pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
R-6, Axial
Supplier Device Package:
R-6
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
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