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HERA808G

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Part Number

HERA808G

Manufacturer

Taiwan Semiconductor Corporation

Description

DIODE GEN PURP 8A TO220AC

Lifecycle

Active

RoHS

No RoHS Information

EDA/CAD Models

HERA808G PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:0 pcs

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HERA808G 规格

Capacitance @ Vr, F
55pF @ 4V, 1MHz
Current - Average Rectified (Io)
8A
Current - Reverse Leakage @ Vr
10 µA @ 1000 V
Diode Type
Standard
Manufacturer
Taiwan Semiconductor Corporation
Mounting Type
Through Hole
Operating Temperature - Junction
-55°C ~ 150°C
Package / Case
TO-220-2
Reverse Recovery Time (trr)
80 ns
Series
-
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package
TO-220AC
Voltage - DC Reverse (Vr) (Max)
1000 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A

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