Part Number:
CRS15I30B-TE85L-QM
Manufacturer:
Toshiba Semiconductor and Storage
Description:
DIODE SCHOTTKY 30V 1.5A S-FLAT
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
1.5A
Voltage - Forward (Vf) (Max) @ If:
400 mV @ 1.5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 µA @ 30 V
Capacitance @ Vr, F:
82pF @ 10V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SOD-123F
Supplier Device Package:
S-FLAT (1.6x3.5)
Operating Temperature - Junction:
150°C (Max)
Stock:
9000
Part Number:
BY253G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
3A, 600V, STANDARD RECOVERY RECT
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 µA @ 600 V
Capacitance @ Vr, F:
40pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
DO-201AD, Axial
Supplier Device Package:
DO-201AD
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
3441
Part Number:
BY254G
Manufacturer:
Taiwan Semiconductor Corporation
Description:
3A, 800V, STANDARD RECOVERY RECT
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 µA @ 800 V
Capacitance @ Vr, F:
40pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
DO-201AD, Axial
Supplier Device Package:
DO-201AD
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
3750
Part Number:
S2AHE3-LTP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
1.15 V @ 2 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 µA @ 50 V
Capacitance @ Vr, F:
20pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AA, SMB
Supplier Device Package:
DO-214AA (SMB)
Operating Temperature - Junction:
-65°C ~ 150°C
Stock:
0
Part Number:
CDSUR4448-HF
Manufacturer:
Comchip Technology
Description:
DIODE SWITCHING 80V 125MA 0603
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
80 V
Current - Average Rectified (Io):
125mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
9 ns
Current - Reverse Leakage @ Vr:
100 nA @ 80 V
Capacitance @ Vr, F:
9pF @ 500mV, 1MHz
Mounting Type:
Surface Mount
Package / Case:
2-SMD, No Lead
Supplier Device Package:
0603/SOD-523F
Operating Temperature - Junction:
-40°C ~ 125°C
Stock:
0
Part Number:
JTXV1N5822US
Manufacturer:
Semtech
Description:
DIODE SCHOTTKY 40V 3A
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
500 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 µA @ 40 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
SQ-MELF
Supplier Device Package:
-
Operating Temperature - Junction:
-65°C ~ 125°C
Stock:
0
Part Number:
BAS70X-TP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
70 V
Current - Average Rectified (Io):
70mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 15 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
5 ns
Current - Reverse Leakage @ Vr:
200 nA @ 50 V
Capacitance @ Vr, F:
2pF @ 1V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SC-79, SOD-523
Supplier Device Package:
SOD-523
Operating Temperature - Junction:
-55°C ~ 125°C
Stock:
0
Part Number:
PU2BFSH
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 100V 2A SOD128
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
930 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
25 ns
Current - Reverse Leakage @ Vr:
2 µA @ 100 V
Capacitance @ Vr, F:
32pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SOD-128
Supplier Device Package:
SOD-128
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
83520
Part Number:
1N4002L
Manufacturer:
Diodes Incorporated
Description:
DIODE GEN PURP 100V 1A DO41
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
1 V @ 1 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 µA @ 100 V
Capacitance @ Vr, F:
15pF @ 4V, 1MHz
Mounting Type:
Through Hole
Package / Case:
DO-204AL, DO-41, Axial
Supplier Device Package:
DO-41
Operating Temperature - Junction:
-55°C ~ 125°C
Stock:
0
Part Number:
JAN1N6910UTK2
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 15V 25A THINKEY2
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
15 V
Current - Average Rectified (Io):
25A
Voltage - Forward (Vf) (Max) @ If:
520 mV @ 25 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
1.2 mA @ 15 V
Capacitance @ Vr, F:
2000pF @ 5V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
ThinKey™2
Supplier Device Package:
ThinKey™2
Operating Temperature - Junction:
-65°C ~ 150°C
Stock:
0
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