Part Number:
WNSC2D1012006Q
Manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARB 1.2KV 10A TO220AC
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 10 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
50 µA @ 1200 V
Capacitance @ Vr, F:
481pF @ 1V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-220-2
Supplier Device Package:
TO-220AC
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
JANTXV1N3070UR-1-TR
Manufacturer:
Microchip Technology
Description:
SIGNAL OR COMPUTER DIODE
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
175 V
Current - Average Rectified (Io):
100mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
100 nA @ 175 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
DO-213AA
Supplier Device Package:
DO-213AA
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
B340AXF-13
Manufacturer:
Diodes Incorporated
Description:
DIODE SCHOTT 40V 3A SMAF TR 10K
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
500 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
200 µA @ 40 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
DO-214AC, SMA Flat Leads
Supplier Device Package:
SMAF
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
30000
Part Number:
240NQ045R-1
Manufacturer:
SMC Diode Solutions
Description:
DIODE SCHOTTKY 45V 240A PRM1-1
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
240A
Voltage - Forward (Vf) (Max) @ If:
610 mV @ 240 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
20 mA @ 45 V
Capacitance @ Vr, F:
8000pF @ 5V, 1MHz
Mounting Type:
Chassis Mount
Package / Case:
HALF-PAK
Supplier Device Package:
PRM1-1 (Half Pak Module)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
81
Part Number:
WNSC2D101200WQ
Manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARB 1.2KV 10A TO247-2
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
1.65 V @ 10 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
110 µA @ 1200 V
Capacitance @ Vr, F:
490pF @ 1V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-247-2
Supplier Device Package:
TO-247-2
Operating Temperature - Junction:
175°C
Stock:
6999
Part Number:
CGRB203-HF
Manufacturer:
Comchip Technology
Description:
DIODE GEN PURP 200V 2A DO214AA S
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 2 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 µA @ 200 V
Capacitance @ Vr, F:
10pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AA, SMB
Supplier Device Package:
SMB/DO-214AA
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
BAS416-HF
Manufacturer:
Comchip Technology
Description:
DIODE SWITCHING 85V 200MA 250MW
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
3 µs
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Capacitance @ Vr, F:
4pF @ 0V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SC-76, SOD-323
Supplier Device Package:
SOD-323
Operating Temperature - Junction:
150°C
Stock:
8190
Part Number:
CD4148-O
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 75V 200MA DIE
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
75 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
1.2 V @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
5 ns
Current - Reverse Leakage @ Vr:
500 nA @ 75 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
CUS05-TE85L-Q-M
Manufacturer:
Toshiba Semiconductor and Storage
Description:
DIODE SCHOTTKY 20V 1A US-FLAT
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
20 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
370 mV @ 700 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
1 mA @ 20 V
Capacitance @ Vr, F:
40pF @ 10V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SC-76, SOD-323
Supplier Device Package:
US-FLAT (1.25x2.5)
Operating Temperature - Junction:
-40°C ~ 125°C
Stock:
0
Part Number:
CUD3-02-TR13-PBFREE
Manufacturer:
Central Semiconductor Corp
Description:
DIODE GEN PURP 200V 4A DPAK
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
4A
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 12 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
35 ns
Current - Reverse Leakage @ Vr:
20 µA @ 200 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package:
DPAK
Operating Temperature - Junction:
-65°C ~ 150°C
Stock:
0
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