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65V|4.1A (Ta)|-
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TRANS GAN 65V 4.1A BUMPED DIE
Specifications
- Brand
- EPC
- Package
- Die
- Packaging
- —
- Weight
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Total Inventory
4,864pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how EPC8009ENGR from EPC fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | EPC | |
| Series | eGaN? | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 65V | |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Rds On (Max) @ Id, Vgs | 138 mOhm @ 500mA, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.38nC @ 5V | |
| Vgs (Max) | +6V, -5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 47pF @ 32.5V | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Die | |
| Package / Case | Die |
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