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EPC2102ENG

60V|23A|-
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GAN TRANS 2N-CH 60V BUMPED DIE

Specifications

Brand
EPC
Package
Die
Packaging
—
Weight
—

Total Inventory

378pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how EPC2102ENG from EPC fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerEPC
SerieseGaN®
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C23A
Rds On (Max) @ Id, Vgs4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds830pF @ 30V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Datasheet & Documents

epc2102eng.pdf

PDF Document · 7 pages

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Datasheet Preview

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