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EPC2102ENG

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付款方式:

Part Number

EPC2102ENG

Manufacturer

EPC

Description

GAN TRANS 2N-CH 60V BUMPED DIE

Lifecycle

/

RoHS

No RoHS Information

EDA/CAD Models

EPC2102ENG PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:378 pcs

运送服务:

EPC2102ENG 规格

Current - Continuous Drain (Id) @ 25°C
23A
Drain to Source Voltage (Vdss)
60V
FET Feature
GaNFET (Gallium Nitride)
FET Type
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs
6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
830pF @ 30V
Manufacturer
EPC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Die
Power - Max
-
Rds On (Max) @ Id, Vgs
4.4mOhm @ 20A, 5V
Series
eGaN®
Supplier Device Package
Die
Vgs(th) (Max) @ Id
2.5V @ 7mA

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EPC2102ENG

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