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EPC2100ENG

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付款方式：

Part Number

EPC2100ENG

Manufacturer

EPC

Description

GAN TRANS 2N-CH 30V BUMPED DIE

Lifecycle

/

RoHS

No RoHS Information

EDA/CAD Models

EPC2100ENG PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:139 pcs

运送服务：

EPC2100ENG 规格

Current - Continuous Drain (Id) @ 25°C
10A (Ta), 40A (Ta)
Drain to Source Voltage (Vdss)
30V
FET Feature
GaNFET (Gallium Nitride)
FET Type
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs
4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 15V, 1960pF @ 15V
Manufacturer
EPC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Die
Power - Max
-
Rds On (Max) @ Id, Vgs
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Series
eGaN®
Supplier Device Package
Die
Vgs(th) (Max) @ Id
2.5V @ 4mA, 2.5V @ 16mA

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EPC2100ENG

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