EPC2100ENG

30V|10A (Ta), 40A (Ta)|-

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GAN TRANS 2N-CH 30V BUMPED DIE

139pcs

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MOQ: 1 pcs

Product Video

Manufacturer	EPC
Series	eGaN®
FET Type	2 N-Channel (Half Bridge)
FET Feature	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs	8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id	2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs	4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	475pF @ 15V, 1960pF @ 15V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die