Heisener Electronics
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EPC8009

65V|2.7A (Ta)|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

GANFET TRANS 65V 2.7A BUMPED DIE

Specifications

Brand
EPC
Package
Die
Packaging
—
Weight
—

Total Inventory

426pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how EPC8009 from EPC fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)65V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs130mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.45nC @ 5V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds52pF @ 32.5V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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Datasheet & Documents

epc8009.pdf

PDF Document · 7 pages

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Datasheet Preview

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