Heisener Electronics
BOM

EPC2304ENGRT

200 V|102A (Ta)|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS GAN 200V .005OHM 3X5PQFN

Specifications

Brand
EPC
Package
7-QFN (3x5)
Packaging
—
Weight
—

Total Inventory

115,131pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how EPC2304ENGRT from EPC fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C102A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id2.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 5 V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds3195 pF @ 100 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package7-QFN (3x5)
Package / Case7-PowerWQFN

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