Heisener Electronics
BOM

EPC2216

15 V|3.4A (Ta)|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

GANFET N-CH 15V 3.4A DIE

Specifications

Brand
EPC
Package
Die
Packaging
—
Weight
—

Total Inventory

116,046pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how EPC2216 from EPC fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)15 V
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs1.1 nC @ 5 V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds118 pF @ 7.5 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

Recommended Products

PTF652K0000AYBF

PTF652K0000AYBF

RES 2K OHM 1/4W 0.05% AXIAL

H838K3BDA

H838K3BDA

RES 38.3K OHM 1/4W 0.1% AXIAL

RK73H1ETTP2323F

RK73H1ETTP2323F

RES 232 KOHM 1% 1/10W 0402

SIT1602BI-22-28E-33-333000E

SIT1602BI-22-28E-33-333000E

MEMS OSC XO 33.3330MHZ H/LV-CMOS

1808J1000821GFR

1808J1000821GFR

CAP CER 820PF 100V C0G/NP0 1808

13008-061KESZ

13008-061KESZ

CAP TANT 68UF 10% 35V 2924

VE-B6N-EW

VE-B6N-EW

DC DC CONVERTER 18.5V 100W

IRG4RC20FTRL

IRG4RC20FTRL

IGBT 600V 22A 66W DPAK

D38999-25HA44PD

D38999-25HA44PD

D38999/25HA44PD