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120V|3.4A|-
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GAN TRANS 2N-CH 120V BUMPED DIE
Specifications
- Brand
- EPC
- Package
- Die
- Packaging
- —
- Weight
- —
Total Inventory
15,478pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how EPC2110ENGRT from EPC fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | EPC | |
| Series | eGaN® | |
| FET Type | 2 N-Channel (Dual) Common Source | |
| FET Feature | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 120V | |
| Current - Continuous Drain (Id) @ 25°C | 3.4A | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V | |
| Power - Max | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
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Datasheet & Documents
epc2110.pdf
PDF Document · 7 pages
