Heisener Electronics
BOM

EPC2108

60V, 100V|1.7A, 500mA|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

GANFET 3 N-CH 60V/100V 9BGA

Specifications

Brand
EPC
Package
9-VFBGA
Packaging
—
Weight
—

Total Inventory

3,881pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how EPC2108 from EPC fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerEPC
SerieseGaN®
FET Type3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)60V, 100V
Current - Continuous Drain (Id) @ 25°C1.7A, 500mA
Rds On (Max) @ Id, Vgs190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds22pF @ 30V, 7pF @ 30V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case9-VFBGA
Supplier Device Package9-BGA (1.35x1.35)

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Datasheet & Documents

epc2108.pdf

PDF Document · 10 pages

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