EPC2100

30V|10A (Ta), 40A (Ta)|-

OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

GAN TRANS ASYMMETRICAL HALF BRID

9,944pcs

Ship within 8 hours

Purchase Quantity

MOQ: 1 pcs

Product Video

Manufacturer	EPC
Series	eGaN®
FET Type	2 N-Channel (Half Bridge)
FET Feature	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs	8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id	2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs	4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	475pF @ 15V, 1960pF @ 15V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die