EPC2037

100V|1.7A (Ta)|-

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GAN TRANS 100V 550MOHM BUMPED DI

102,489pcs

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Purchase Quantity

MOQ: 1 pcs

Product Video

Manufacturer	EPC
Series	eGaN®
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	550mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id	2.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	0.12nC @ 5V
Vgs (Max)	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds	14pF @ 50V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die