Heisener Electronics
BOM

EPC2012

200V|3A (Ta)|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

GANFET TRANS 200V 3A BUMPED DIE

Specifications

Brand
EPC
Package
Die
Packaging
—
Weight
—

Total Inventory

392pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how EPC2012 from EPC fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs1.8nC @ 5V
Vgs (Max)+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds145pF @ 100V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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Datasheet & Documents

epc2012.pdf

PDF Document · 6 pages

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Datasheet Preview

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