Heisener Electronics
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EPC2001

100V|25A (Ta)|-
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GANFET TRANS 100V 25A BUMPED DIE

Specifications

Brand
EPC
Package
Die Outline (11-Solder Bar)
Packaging
—
Weight
—

Total Inventory

101pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how EPC2001 from EPC fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs10nC @ 5V
Vgs (Max)+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 50V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie Outline (11-Solder Bar)
Package / CaseDie

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Datasheet & Documents

epc2001.pdf

PDF Document · 6 pages

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Datasheet Preview

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