Part Number:
BUK7K6R2-40E/CX
Manufacturer:
NXP
Description:
MOSFET 2N-CH 56LFPAK
Series:
*
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
482
Part Number:
PHN210,118
Manufacturer:
NXP
Description:
MOSFET 2N-CH 30V 8SOIC
Series:
TrenchMOS™
FET Type:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
250pF @ 20V
Power - Max:
2W
Operating Temperature:
-65°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SO
Stock:
348
Part Number:
SI9936DY,518
Manufacturer:
NXP
Description:
MOSFET 2N-CH 30V 5A SOT96-1
Series:
TrenchMOS™
FET Type:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
5A
Rds On (Max) @ Id, Vgs:
50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
900mW
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SO
Stock:
270
Part Number:
NSTJD4001NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH SC88
Series:
*
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
455
Part Number:
IRF7904TRPBF-1
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
Series:
*
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
432
Part Number:
IRF7331TRPBF-1
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 20V 7A 8-SOIC
Series:
*
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
351
Part Number:
MCMP06-TP
Manufacturer:
Micro Commercial Co
Description:
MOSFET P+SKY DFN2020-6U
Series:
-
FET Type:
P-Channel
FET Feature:
Schottky Diode (Isolated)
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Rds On (Max) @ Id, Vgs:
110mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
480pF @ 15V
Power - Max:
700mW (Ta)
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-VDFN Exposed Pad
Supplier Device Package:
DFN2020-6U
Stock:
321
Part Number:
TSM1N45DCS RL
Manufacturer:
Taiwan Semiconductor Corporation
Description:
MOSFET N-CHANNEL
Series:
-
FET Type:
2 N-Channel (Dual)
FET Feature:
Standard
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Rds On (Max) @ Id, Vgs:
4.25Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:
4.9V @ 250mA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SOP
Stock:
457
Part Number:
DMP2160UFDB-7R
Manufacturer:
Diodes Incorporated
Description:
MOSFET P-CH SOT23
Series:
*
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
304
Part Number:
DMN5L06VK-7-G
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH SOT23
Series:
*
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
235
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