页 227 - Micron Technology Inc. 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F4T08EYHBBG9-3RES:B TR	Micron Technology Inc.	IC FLASH 4TBIT 333MHZ LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Tb (512G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,904	FLASH	FLASH - NAND	4Tb (512G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F4T08EYHBBG9-3R:B TR	Micron Technology Inc.	IC FLASH 4TBIT 333MHZ LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Tb (512G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,136	FLASH	FLASH - NAND	4Tb (512G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F256G08AUCABH3-10Z:A TR	Micron Technology Inc.	IC FLASH 256GBIT 100MHZ 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LBGA (12x18)	封装: 100-LBGA	库存5,056	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LBGA	100-LBGA (12x18)
MT29F256G08AUCABH3-10Z:A	Micron Technology Inc.	IC FLASH 256GBIT 100MHZ 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LBGA (12x18)	封装: 100-LBGA	库存5,136	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LBGA	100-LBGA (12x18)
MT29F4T08EYCBBG9-37ES:B TR	Micron Technology Inc.	IC FLASH 4TBIT 267MHZ LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Tb (512G x 8) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,472	FLASH	FLASH - NAND	4Tb (512G x 8)	Parallel	267MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F4T08EYCBBG9-37:B TR	Micron Technology Inc.	IC FLASH 4TBIT 267MHZ LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Tb (512G x 8) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,048	FLASH	FLASH - NAND	4Tb (512G x 8)	Parallel	267MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EUHBBM4-3RES:B TR	Micron Technology Inc.	IC FLASH 3TBIT 333MHZ 132LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 3Tb (384G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,776	FLASH	FLASH - NAND	3Tb (384G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EUCBBM4-37ES:B TR	Micron Technology Inc.	IC FLASH 3TBIT 267MHZ 132LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 3Tb (384G x 8) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,264	FLASH	FLASH - NAND	3Tb (384G x 8)	Parallel	267MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT28HL64GRBB6EBL-0GCT	Micron Technology Inc.	NOR FLASH 1GX64 PLASTIC 3.3V Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,000	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08AUCDBJ6-6IT:D	Micron Technology Inc.	IC FLASH 256GBIT 167MHZ 132LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,608	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F256G08AUCDBJ6-6IT:D TR	Micron Technology Inc.	IC FLASH 256GBIT 167MHZ 132LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,856	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F3T08EQCBBG2-37:B TR	Micron Technology Inc.	IC FLASH 3TBIT 267MHZ 272TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 3Tb (384G x 8) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,872	FLASH	FLASH - NAND	3Tb (384G x 8)	Parallel	267MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F1T08CUCCBH8-6ITR:C	Micron Technology Inc.	IC FLASH 1TBIT 167MHZ 152LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,912	FLASH	FLASH - NAND	1Tb (128G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29E3T08EUHBBM4-3ES:B TR	Micron Technology Inc.	IC FLASH 3TBIT 333MHZ 132LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 3Tb (384G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,392	FLASH	FLASH - NAND	3Tb (384G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E3T08EQHBBG2-3:B	Micron Technology Inc.	IC FLASH 3TBIT 333MHZ 272TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 3Tb (384G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,784	FLASH	FLASH - NAND	3Tb (384G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08AKAAAC5-ITZ:A	Micron Technology Inc.	IC FLASH 128GBIT 52VLGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 52-VLGA Supplier Device Package: 52-VLGA (18x14)	封装: 52-VLGA	库存2,192	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	52-VLGA	52-VLGA (18x14)
MT29F2T08CQHBBG2-3RES:B TR	Micron Technology Inc.	IC FLASH 2TBIT 333MHZ 272TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,720	FLASH	FLASH - NAND	2Tb (256G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F256G08AMCBBH7-6IT:B TR	Micron Technology Inc.	IC FLASH 256GBIT 167MHZ 152TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,504	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F256G08AKCBBH7-6IT:B TR	Micron Technology Inc.	IC FLASH 256GBIT 167MHZ 152TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,384	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F2T08CUCBBK9-37ES:B	Micron Technology Inc.	IC FLASH 2TBIT 267MHZ LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,312	FLASH	FLASH - NAND	2Tb (256G x 8)	Parallel	267MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT35XU01GBBA2G12-0SIT TR	Micron Technology Inc.	SERIAL NOR SLC 128MX8 TBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,104	-	-	-	-	-	-	-	-	-	-	-	-
MT35XU01GBBA1G12-0SIT TR	Micron Technology Inc.	SERIAL NOR SLC 128MX8 TBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,648	-	-	-	-	-	-	-	-	-	-	-	-
MT35XL01GBBA2G12-0SIT TR	Micron Technology Inc.	SERIAL NOR SLC 128MX8 TBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,408	-	-	-	-	-	-	-	-	-	-	-	-
MT35XL01GBBA1G12-0SIT TR	Micron Technology Inc.	SERIAL NOR SLC 128MX8 TBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,296	-	-	-	-	-	-	-	-	-	-	-	-
MT29F3T08EQHBBG2-3RES:B TR	Micron Technology Inc.	IC FLASH 3TBIT 333MHZ 272TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 3Tb (384G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,960	FLASH	FLASH - NAND	3Tb (384G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EQHBBG2-3R:B TR	Micron Technology Inc.	IC FLASH 3TBIT 333MHZ 272TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 3Tb (384G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,264	FLASH	FLASH - NAND	3Tb (384G x 8)	Parallel	333MHz	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E1T08CUCCBH8-6:C TR	Micron Technology Inc.	IC FLASH 1TBIT 167MHZ 152LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,824	FLASH	FLASH - NAND	1Tb (128G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29E1HT08EMHBBJ4-3:B TR	Micron Technology Inc.	IC FLASH 1.5TBIT 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1.5Tb (192G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,232	FLASH	FLASH - NAND	1.5Tb (192G x 8)	Parallel	-	-	-	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F3T08EQCBBG2-37ES:B TR	Micron Technology Inc.	IC FLASH 3TBIT 267MHZ 272TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 3Tb (384G x 8) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,928	FLASH	FLASH - NAND	3Tb (384G x 8)	Parallel	267MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08AMAAAC5-Z:A	Micron Technology Inc.	IC FLASH 128GBIT 52VLGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-VLGA Supplier Device Package: 52-VLGA (18x14)	封装: 52-VLGA	库存3,632	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	52-VLGA	52-VLGA (18x14)

MT29F4T08EYHBBG9-3RES:B TR

Micron Technology Inc.

IC FLASH 4TBIT 333MHZ LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Tb (512G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,904

FLASH

FLASH - NAND

4Tb (512G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F4T08EYHBBG9-3R:B TR

Micron Technology Inc.

IC FLASH 4TBIT 333MHZ LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Tb (512G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,136

FLASH

FLASH - NAND

4Tb (512G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F256G08AUCABH3-10Z:A TR

Micron Technology Inc.

IC FLASH 256GBIT 100MHZ 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (12x18)

封装: 100-LBGA

库存5,056

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LBGA

100-LBGA (12x18)

MT29F256G08AUCABH3-10Z:A

Micron Technology Inc.

IC FLASH 256GBIT 100MHZ 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (12x18)

封装: 100-LBGA

库存5,136

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LBGA

100-LBGA (12x18)

MT29F4T08EYCBBG9-37ES:B TR

Micron Technology Inc.

IC FLASH 4TBIT 267MHZ LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Tb (512G x 8)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,472

FLASH

FLASH - NAND

4Tb (512G x 8)

Parallel

267MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F4T08EYCBBG9-37:B TR

Micron Technology Inc.

IC FLASH 4TBIT 267MHZ LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Tb (512G x 8)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,048

FLASH

FLASH - NAND

4Tb (512G x 8)

Parallel

267MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F3T08EUHBBM4-3RES:B TR

Micron Technology Inc.

IC FLASH 3TBIT 333MHZ 132LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 3Tb (384G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,776

FLASH

FLASH - NAND

3Tb (384G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F3T08EUCBBM4-37ES:B TR

Micron Technology Inc.

IC FLASH 3TBIT 267MHZ 132LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 3Tb (384G x 8)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,264

FLASH

FLASH - NAND

3Tb (384G x 8)

Parallel

267MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT28HL64GRBB6EBL-0GCT

Micron Technology Inc.

NOR FLASH 1GX64 PLASTIC 3.3V

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,000

-

MT29F256G08AUCDBJ6-6IT:D

Micron Technology Inc.

IC FLASH 256GBIT 167MHZ 132LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,608

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F256G08AUCDBJ6-6IT:D TR

Micron Technology Inc.

IC FLASH 256GBIT 167MHZ 132LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,856

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F3T08EQCBBG2-37:B TR

Micron Technology Inc.

IC FLASH 3TBIT 267MHZ 272TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 3Tb (384G x 8)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,872

FLASH

FLASH - NAND

3Tb (384G x 8)

Parallel

267MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F1T08CUCCBH8-6ITR:C

Micron Technology Inc.

IC FLASH 1TBIT 167MHZ 152LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,912

FLASH

FLASH - NAND

1Tb (128G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29E3T08EUHBBM4-3ES:B TR

Micron Technology Inc.

IC FLASH 3TBIT 333MHZ 132LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 3Tb (384G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,392

FLASH

FLASH - NAND

3Tb (384G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29E3T08EQHBBG2-3:B

Micron Technology Inc.

IC FLASH 3TBIT 333MHZ 272TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 3Tb (384G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,784

FLASH

FLASH - NAND

3Tb (384G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F128G08AKAAAC5-ITZ:A

Micron Technology Inc.

IC FLASH 128GBIT 52VLGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-VLGA
Supplier Device Package: 52-VLGA (18x14)

封装: 52-VLGA

库存2,192

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

52-VLGA

52-VLGA (18x14)

MT29F2T08CQHBBG2-3RES:B TR

Micron Technology Inc.

IC FLASH 2TBIT 333MHZ 272TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,720

FLASH

FLASH - NAND

2Tb (256G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F256G08AMCBBH7-6IT:B TR

Micron Technology Inc.

IC FLASH 256GBIT 167MHZ 152TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,504

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F256G08AKCBBH7-6IT:B TR

Micron Technology Inc.

IC FLASH 256GBIT 167MHZ 152TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,384

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F2T08CUCBBK9-37ES:B

Micron Technology Inc.

IC FLASH 2TBIT 267MHZ LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,312

FLASH

FLASH - NAND

2Tb (256G x 8)

Parallel

267MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT35XU01GBBA2G12-0SIT TR

Micron Technology Inc.

SERIAL NOR SLC 128MX8 TBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,104

-

MT35XU01GBBA1G12-0SIT TR

Micron Technology Inc.

SERIAL NOR SLC 128MX8 TBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,648

-

MT35XL01GBBA2G12-0SIT TR

Micron Technology Inc.

SERIAL NOR SLC 128MX8 TBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,408

-

MT35XL01GBBA1G12-0SIT TR

Micron Technology Inc.

SERIAL NOR SLC 128MX8 TBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,296

-

MT29F3T08EQHBBG2-3RES:B TR

Micron Technology Inc.

IC FLASH 3TBIT 333MHZ 272TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 3Tb (384G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,960

FLASH

FLASH - NAND

3Tb (384G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F3T08EQHBBG2-3R:B TR

Micron Technology Inc.

IC FLASH 3TBIT 333MHZ 272TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 3Tb (384G x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,264

FLASH

FLASH - NAND

3Tb (384G x 8)

Parallel

333MHz

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29E1T08CUCCBH8-6:C TR

Micron Technology Inc.

IC FLASH 1TBIT 167MHZ 152LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,824

FLASH

FLASH - NAND

1Tb (128G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29E1HT08EMHBBJ4-3:B TR

Micron Technology Inc.

IC FLASH 1.5TBIT 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1.5Tb (192G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,232

FLASH

FLASH - NAND

1.5Tb (192G x 8)

Parallel

-

2.5 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F3T08EQCBBG2-37ES:B TR

Micron Technology Inc.

IC FLASH 3TBIT 267MHZ 272TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 3Tb (384G x 8)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,928

FLASH

FLASH - NAND

3Tb (384G x 8)

Parallel

267MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F128G08AMAAAC5-Z:A

Micron Technology Inc.

IC FLASH 128GBIT 52VLGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-VLGA
Supplier Device Package: 52-VLGA (18x14)

封装: 52-VLGA

库存3,632

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

52-VLGA

52-VLGA (18x14)