页 224 - Micron Technology Inc. 产品 - 存储器 | 深圳黑森尔电子
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Micron Technology Inc. 产品 - 存储器

记录 10,993
页  224/367
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT29F512G08CMCCBH7-6ITR:C TR
Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 152TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,944
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
166MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MT29F64G08AECABJ1-10ITZ:A
Micron Technology Inc.

IC FLASH 64GBIT 100MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,320
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
-
-
MT44K64M18RB-093E:A TR
Micron Technology Inc.

IC RLDRAM 1.125GBIT 1.067GHZ BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 1.125Gb (64Mb x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 1067MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-TBGA
  • Supplier Device Package: 168-BGA
封装: 168-TBGA
库存6,112
DRAM
DRAM
1.125Gb (64Mb x 18)
Parallel
1067MHz
-
8ns
1.28 V ~ 1.42 V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA
MT44K32M36RB-093E:A TR
Micron Technology Inc.

IC RLDRAM 1.125GBIT 1.067GHZ BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 1.125Gb (32Mb x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 1067MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-TBGA
  • Supplier Device Package: 168-BGA
封装: 168-TBGA
库存5,552
DRAM
DRAM
1.125Gb (32Mb x 36)
Parallel
1067MHz
-
8ns
1.28 V ~ 1.42 V
0°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA
MT29F128G08AECBBH6-6IT:B TR
Micron Technology Inc.

IC FLASH 128GBIT 152VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,704
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MT29E1HT08EMHBBJ4-3ES:B TR
Micron Technology Inc.

IC FLASH 1.5TBIT 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.5Tb (192G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,120
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
-
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29E1HT08ELHBBG1-3ES:B TR
Micron Technology Inc.

IC FLASH 1.5TBIT 272VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.5Tb (192G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,448
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
-
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29E1HT08ELHBBG1-3:B
Micron Technology Inc.

IC FLASH 1.5TBIT 272VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.5Tb (192G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,344
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
-
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MTFC64GAJAEDN-AIT TR
Micron Technology Inc.

IC FLASH 512GBIT 169LFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,784
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
-
-
-
MTFC64GAJAEDN-5M AIT
Micron Technology Inc.

IC FLASH 512GBIT 169LFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,512
FLASH
FLASH - NAND
512Gb (64G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
-
-
-
MT29F1T08CLHBBG1-3RES:B TR
Micron Technology Inc.

IC FLASH 1TBIT 333MHZ 272VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,456
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT52L1G32D4PG-107 WT:B
Micron Technology Inc.

IC SDRAM 32GBIT 512MX64 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 32Gb (1G x 32)
  • Memory Interface: -
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,064
DRAM
SDRAM - Mobile LPDDR3
32Gb (1G x 32)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
-
-
-
MT52L512M64D4PQ-107 WT:B
Micron Technology Inc.

IC SDRAM LPDDR3 32GB 253VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 32Gb (512M x 64)
  • Memory Interface: -
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,784
DRAM
SDRAM - Mobile LPDDR3
32Gb (512M x 64)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
-
-
-
MT52L512M64D4PQ-107 WT:B TR
Micron Technology Inc.

IC SDRAM 32GBIT 933MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 32Gb (512M x 64)
  • Memory Interface: -
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,952
DRAM
SDRAM - Mobile LPDDR3
32Gb (512M x 64)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
-
-
-
MT52L512M64D4PQ-093 WT:B TR
Micron Technology Inc.

IC SDRAM 32GBIT 1.067GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 32Gb (512M x 64)
  • Memory Interface: -
  • Clock Frequency: 1067MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,232
DRAM
SDRAM - Mobile LPDDR3
32Gb (512M x 64)
-
1067MHz
-
-
1.2V
-30°C ~ 85°C (TC)
-
-
-
MT52L1G32D4PG-107 WT:B TR
Micron Technology Inc.

IC SDRAM 32GBIT 933MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 32Gb (1G x 32)
  • Memory Interface: -
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,224
DRAM
SDRAM - Mobile LPDDR3
32Gb (1G x 32)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
-
-
-
MT52L512M64D4GN-107 WT:B TR
Micron Technology Inc.

IC SDRAM 32GBIT 933MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 32Gb (512M x 64)
  • Memory Interface: -
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,368
DRAM
SDRAM - Mobile LPDDR3
32Gb (512M x 64)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
-
-
-
MT52L1G32D4PG-093 WT:B
Micron Technology Inc.

IC SDRAM 32GBIT 1.067GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 32Gb (1G x 32)
  • Memory Interface: -
  • Clock Frequency: 1067MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,184
DRAM
SDRAM - Mobile LPDDR3
32Gb (1G x 32)
-
1067MHz
-
-
1.2V
-30°C ~ 85°C (TC)
-
-
-
MT28HL32GQBB3ERK-0GCT
Micron Technology Inc.

NOR FLASH 1GX32 PLASTIC PBF FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,800
-
-
-
-
-
-
-
-
-
-
-
-
MT29F1HT08ELHBBG1-3RES:B TR
Micron Technology Inc.

IC FLASH 1.5TBIT 333MHZ 272VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.5Tb (192G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,840
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F1HT08ELHBBG1-3R:B TR
Micron Technology Inc.

IC FLASH 1.5TBIT 333MHZ 272VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.5Tb (192G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,088
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29E512G08CMCCBH7-6:C
Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 152TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,048
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29E512G08CMCCBH7-6:C TR
Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 152TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,432
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29E512G08CKCCBH7-6:C TR
Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 152TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,416
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT44K32M36RB-107E IT:A TR
Micron Technology Inc.

IC RLDRAM 1.125GBIT 933MHZ BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 1.125Gb (32Mb x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-TBGA
  • Supplier Device Package: 168-BGA
封装: 168-TBGA
库存4,400
DRAM
DRAM
1.125Gb (32Mb x 36)
Parallel
933MHz
-
8ns
1.28 V ~ 1.42 V
-40°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA
MT29F64G08AEAAAC5-Z:A
Micron Technology Inc.

IC FLASH 64GBIT 52VLGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-VELGA
  • Supplier Device Package: 52-VLGA (18x14)
封装: 52-VELGA
库存5,648
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
52-VELGA
52-VLGA (18x14)
MT29F64G08AEAAAC5-Z:A TR
Micron Technology Inc.

IC FLASH 64GBIT 52VLGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-VELGA
  • Supplier Device Package: 52-VLGA (18x14)
封装: 52-VELGA
库存3,360
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
52-VELGA
52-VLGA (18x14)
MT29E768G08EEHBBJ4-3:B TR
Micron Technology Inc.

IC FLASH 768GBIT 333MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 768Gb (96G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,360
FLASH
FLASH - NAND
768Gb (96G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F1T208ECHBBJ4-3RES:B TR
Micron Technology Inc.

IC FLASH 1.125TBIT 333MHZ 132BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.125Tb (144G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,376
FLASH
FLASH - NAND
1.125Tb (144G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F1HT08EMCBBJ4-37ES:B TR
Micron Technology Inc.

IC FLASH 1.5TBIT 267MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.5Tb (192G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,408
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
267MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-