页 226 - Micron Technology Inc. 产品 - 存储器 | 深圳黑森尔电子
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Micron Technology Inc. 产品 - 存储器

记录 10,993
页  226/367
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT29F128G08AKAAAC5-Z:A
Micron Technology Inc.

IC FLASH 128GBIT 52VLGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-VLGA
  • Supplier Device Package: 52-VLGA (18x14)
封装: 52-VLGA
库存4,784
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
52-VLGA
52-VLGA (18x14)
MT29F1T08CUCCBH8-6R:C
Micron Technology Inc.

IC FLASH 1TBIT 167MHZ 152LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,080
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F1T08CUCCBH8-6R:C TR
Micron Technology Inc.

IC FLASH 1TBIT 167MHZ 152LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,480
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F1HT08EMHBBJ4-3R:B TR
Micron Technology Inc.

IC FLASH 1.5TBIT 333MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.5Tb (192G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,344
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F1T08CUECBH8-12:C TR
Micron Technology Inc.

IC FLASH 1TBIT 83MHZ 152LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,632
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F1T08CUECBH8-12:C
Micron Technology Inc.

IC FLASH 1TBIT 83MHZ 152LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,928
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F1HT08EMCBBJ4-37:B TR
Micron Technology Inc.

IC FLASH 1.5TBIT 267MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.5Tb (192G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,144
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
267MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29E2T08CUHBBM4-3ES:B TR
Micron Technology Inc.

IC FLASH 2TBIT 333MHZ 132LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,000
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MTFC128GAJAEDN-AIT TR
Micron Technology Inc.

IC FLASH 1TBIT 169LFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,632
FLASH
FLASH - NAND
1Tb (128G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
-
-
-
MT29E1T08CMHBBJ4-3:B TR
Micron Technology Inc.

IC FLASH 1TBIT 333MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,144
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F2T08CUHBBM4-3RES:B TR
Micron Technology Inc.

IC FLASH 2TBIT 333MHZ 132LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,840
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F2T08CQCBBG2-37ES:B TR
Micron Technology Inc.

IC FLASH 2TBIT 267MHZ 272TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,600
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
267MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F1T08CMHBBJ4-3R:B TR
Micron Technology Inc.

IC FLASH 1TBIT 333MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,008
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT29F1T08CMCBBJ4-37:B TR
Micron Technology Inc.

IC FLASH 1TBIT 267MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,624
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
267MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT44K32M36RCT-125:A TR
Micron Technology Inc.

IC RLDRAM 1.125GBIT 800MHZ BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 1.125Gb (32Mb x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 12ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-LBGA
  • Supplier Device Package: 168-BGA (13.5x13.5)
封装: 168-LBGA
库存7,104
DRAM
DRAM
1.125Gb (32Mb x 36)
Parallel
800MHz
-
12ns
1.28 V ~ 1.42 V
0°C ~ 95°C (TC)
Surface Mount
168-LBGA
168-BGA (13.5x13.5)
hot MT29F128G08AMCABH2-10ITZ:A
Micron Technology Inc.

IC FLASH 128GBIT 100TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TBGA
  • Supplier Device Package: 100-TBGA (12x18)
封装: 100-TBGA
库存4,432
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-TBGA
100-TBGA (12x18)
MT29F128G08AKCABH2-10ITZ:A
Micron Technology Inc.

IC FLASH 128GBIT 100TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TBGA
  • Supplier Device Package: 100-TBGA (12x18)
封装: 100-TBGA
库存5,664
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-TBGA
100-TBGA (12x18)
hot MT29F128G08AJAAAWP-ITZ:A
Micron Technology Inc.

IC FLASH 128GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TSOP
  • Supplier Device Package: 48-TSOP
封装: 48-TSOP
库存7,344
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TSOP
48-TSOP
MT29F128G08AMCABH2-10ITZ:A TR
Micron Technology Inc.

IC FLASH 128GBIT 100TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TBGA
  • Supplier Device Package: 100-TBGA (12x18)
封装: 100-TBGA
库存2,720
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-TBGA
100-TBGA (12x18)
MT29F128G08AKCABH2-10ITZ:A TR
Micron Technology Inc.

IC FLASH 128GBIT 100TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TBGA
  • Supplier Device Package: 100-TBGA (12x18)
封装: 100-TBGA
库存3,392
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-TBGA
100-TBGA (12x18)
MT29F128G08AJAAAWP-ITZ:A TR
Micron Technology Inc.

IC FLASH 128GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TSOP
  • Supplier Device Package: 48-TSOP
封装: 48-TSOP
库存4,848
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TSOP
48-TSOP
MT29F1T08CUCBBH8-6R:B TR
Micron Technology Inc.

IC FLASH 1TBIT 167MHZ 152LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,760
FLASH
FLASH - NAND
1Tb (128G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MTFC128GAJAEDN-IT TR
Micron Technology Inc.

IC FLASH 1TBIT 169LFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Tb (128G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,992
FLASH
FLASH - NAND
1Tb (128G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
-
-
-
MT29E1T208ECHBBJ4-3:B TR
Micron Technology Inc.

IC FLASH 1.125TBIT 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.125Tb (144G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,704
FLASH
FLASH - NAND
1.125Tb (144G x 8)
Parallel
-
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT28HL32GQBB3ERK-0SCT
Micron Technology Inc.

NOR FLASH 1GX32 PLASTIC 3.3V

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,656
-
-
-
-
-
-
-
-
-
-
-
-
MT29F512G08CUCABH3-10ITZ:A
Micron Technology Inc.

IC FLASH 512GBIT 100MHZ 100LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-LBGA (12x18)
封装: 100-LBGA
库存2,144
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LBGA (12x18)
MT29F512G08CUCABH3-10ITZ:A TR
Micron Technology Inc.

IC FLASH 512GBIT 100MHZ 100LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-LBGA (12x18)
封装: 100-LBGA
库存7,904
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LBGA (12x18)
MT53D384M64D4NY-046 XT:D
Micron Technology Inc.

IC SDRAM 24GBIT 2.1GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 24Gb (384M x 64)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,304
DRAM
SDRAM - Mobile LPDDR4
24Gb (384M x 64)
-
2133MHz
-
-
1.1V
-
-
-
-
MT53D384M64D4NY-046 XT ES:D
Micron Technology Inc.

IC SDRAM 24GBIT 2.1GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 24Gb (384M x 64)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,696
DRAM
SDRAM - Mobile LPDDR4
24Gb (384M x 64)
-
2133MHz
-
-
1.1V
-
-
-
-
MT29F128G08AMCABH2-10Z:A
Micron Technology Inc.

IC FLASH 128GBIT 100TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-TBGA
  • Supplier Device Package: 100-TBGA (12x18)
封装: 100-TBGA
库存4,064
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-TBGA
100-TBGA (12x18)