Infineon Technologies 产品

IRFZ48NSTRRPBF

Infineon Technologies

MOSFET N-CH 55V 64A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR3711TRL

Infineon Technologies

MOSFET N-CH 20V 100A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IPL60R125C7AUMA1

Infineon Technologies

MOSFET N-CH 600V 17A 4VSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 390µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 103W (Tc)
• Rds On (Max) @ Id, Vgs: 125 mOhm @ 7.8A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-VSON-4
• Package / Case: 4-PowerTSFN

封装: 4-PowerTSFN

IRFR220NPBF

Infineon Technologies

MOSFET N-CH 200V 5A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 43W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF5810TR

Infineon Technologies

MOSFET 2P-CH 20V 2.9A 6-TSOP

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.9A
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
• Power - Max: 960mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: 6-TSOP

封装: SOT-23-6 Thin, TSOT-23-6

IRF8915TRPBF

Infineon Technologies

MOSFET 2N-CH 20V 8.9A 8-SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 8.9A
• Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

BB689H7908XTSA1

Infineon Technologies

DIODE TUNING 30V 20MA SCD80

• Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
• Capacitance Ratio: 23.2
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

封装: SC-80

IR3564BMTRPBF

Infineon Technologies

IC REG CTRLR DL BUCK PWM 40QFN

• Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-QFN (5x5)

封装: 40-VFQFN Exposed Pad

BTS441RSBKSA1

Infineon Technologies

IC HIGH SIDE PWR SWITCH TO220-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.75 V ~ 43 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 17A
• Rds On (Typ): 15 mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-220-5
• Supplier Device Package: P-TO220-5-12

封装: TO-220-5

AUIPS7125RTRL

Infineon Technologies

IC SW IPS 1CH HIGH SIDE DPAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 60 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.8A
• Rds On (Typ): 24 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: D-Pak

封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD

ICLS6021JXKLA1

Infineon Technologies

IC LED DRIVER OFFLINE DIM 8DIP

• Type: AC DC Offline Switcher
• Topology: Flyback
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 10.3V
• Voltage - Supply (Max): 26V
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: 67kHz
• Dimming: PWM
• Applications: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: PG-DIP-8-6

封装: 8-DIP (0.300", 7.62mm)

IR2102STR

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 210mA, 360mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 100ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

PEF 22554 HT V3.1

Infineon Technologies

IC LIU E1/T1/J1 144TQFP

• Function: Framer, Line Interface Unit (LIU)
• Interface: E1, J1, SCI, SPI, T1
• Number of Circuits: 2
• Voltage - Supply: 1.8V, 3.3V
• Current - Supply: -
• Power (Watts): 150mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 144-LQFP
• Supplier Device Package: PG-TQFP-144

封装: 144-LQFP

XC836T2FRIABFXUMA1

Infineon Technologies

IC MCU 8BIT 8KB FLASH 28TSSOP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: I2C, SSC, UART/USART
• Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
• Number of I/O: 23
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 512 x 8
• Voltage - Supply (Vcc/Vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 28-TSSOP

封装: 28-TSSOP (0.173", 4.40mm Width)

XC8362FRIABFXUMA1

Infineon Technologies

IC MCU 8BIT 8KB FLASH 28TSSOP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: I2C, SSC, UART/USART
• Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
• Number of I/O: 23
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 512 x 8
• Voltage - Supply (Vcc/Vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 28-TSSOP

封装: 28-TSSOP (0.173", 4.40mm Width)

XMC1301T016X0016ABXUMA1

Infineon Technologies

IC MCU 32BIT 16KB FLASH 16TSSOP

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 11
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 11x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-16-8

封装: 16-TSSOP (0.173", 4.40mm Width)

IR3570AMGB11TRP

Infineon Technologies

IC REGULATOR PG-VQFN-40-901

• Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-VQFN (5x5)

封装: 40-VFQFN Exposed Pad

TC1762128F80HLACKXUMA1

Infineon Technologies

IC MCU 32BIT 1MB FLASH 176LQFP

• Core Processor: TriCore™
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: ASC, CANbus, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number of I/O: 81
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 52K x 8
• Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
• Data Converters: A/D 2x10b; A/D 32x8b,10b,12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 176-LQFP
• Supplier Device Package: 176-LQFP (24x24)

封装: 176-LQFP

FP50R06KE3GBOSA1

Infineon Technologies

IGBT, 60A, 600V, N-CHANNEL

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 60 A
• Power - Max: 190 W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO3-3-1

封装: -

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CY22393ZXI-510

Infineon Technologies

IC CLOCK GEN PROG 16TSSOP

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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TD700N22KOFXPSA1

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 700 A
• Current - On State (It (RMS)) (Max): 1050 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: 135°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

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28382564A

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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TD210N12KOFHPSA1

Infineon Technologies

SCR MODULE 1800V 410A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 261 A
• Current - On State (It (RMS)) (Max): 410 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

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BSM15GD120DN2E3224BDLA1

Infineon Technologies

IGBT MODULE 1200V

• IGBT Type: -
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 25 A
• Power - Max: 145 W
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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16-3628-01

Infineon Technologies

IC GATE NOR

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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BSM30GD60DLCBOSA1

Infineon Technologies

IGBT MODULE 600V 40A 135W

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 40 A
• Power - Max: 135 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: 1.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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SPI07N65C3XKSA1

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 350µA
• Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

封装: -

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AUXHAFR6215

Infineon Technologies

IC DISCRETE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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S6J334CKSDSE20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 240MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 150
• Program Memory Size: 2.0625MB (2.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 112K x 8
• RAM Size: 544K x 8
• Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
• Data Converters: A/D 48x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 208-LQFP Exposed Pad
• Supplier Device Package: 208-TEQFP (28x28)

封装: -

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D950N18TXPSA1

Infineon Technologies

DIODE GEN PURP 1.8KV 950A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800 V
• Current - Average Rectified (Io): 950A
• Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

封装: -