页 383 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  383/567
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AUIRGS4062D1TRL
Infineon Technologies

IGBT 600V 59A 246W D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 59A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
  • Power - Max: 246W
  • Switching Energy: 532µJ (on), 311µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/90ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 102ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,512
IKP08N65H5XKSA1
Infineon Technologies

IGBT 650V 18A 70W PG-TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
  • Power - Max: 70W
  • Switching Energy: 70µJ (on), 30µJ (off)
  • Input Type: Standard
  • Gate Charge: 22nC
  • Td (on/off) @ 25°C: 11ns/115ns
  • Test Condition: 400V, 4A, 48 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封装: TO-220-3
库存9,516
BSS127H6327XTSA1
Infineon Technologies

MOSFET N-CH 600V 21MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 8µA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存4,128
hot IPB80N06S3-07
Infineon Technologies

MOSFET N-CH 55V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7768pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 51A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,000
BSC440N10NS3GATMA1
Infineon Technologies

MOSFET N-CH 100V 18A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 12µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存3,520
hot IRF2907ZPBF
Infineon Technologies

MOSFET N-CH 75V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存27,924
PTFA091503ELV4R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 30V H-33288-6

  • Transistor Type: LDMOS
  • Frequency: 920MHz ~ 960MHz
  • Gain: 17dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.25A
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-33288-6
封装: 2-Flatpack, Fin Leads, Flanged
库存7,808
BC817K40E6359HTMA1
Infineon Technologies

TRANS NPN 45V SOT323-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 500mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封装: TO-236-3, SC-59, SOT-23-3
库存6,400
BFP 520F E6327
Infineon Technologies

TRANSISTOR RF NPN 2.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
  • Gain: 22.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
封装: 4-SMD, Flat Leads
库存2,480
TLE4269GXUMA2
Infineon Technologies

IC REG LINEAR 5V 100MA 8DSO

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 100mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,584
TDA16847-2
Infineon Technologies

IC POWER SUPPLY CONTROLLER 14DIP

  • Applications: Power Supply Controller
  • Voltage - Input: -
  • Voltage - Supply: 8 V ~ 16 V
  • Current - Supply: 5mA
  • Operating Temperature: -25°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: P-DIP-14
封装: 14-DIP (0.300", 7.62mm)
库存2,896
hot BTS7960B
Infineon Technologies

IC NOVALITHIC 1/2 BRIDGE TO263-7

  • Output Configuration: Half Bridge
  • Applications: DC Motors, General Purpose
  • Interface: Logic
  • Load Type: Inductive
  • Technology: DMOS
  • Rds On (Typ): 9 mOhm LS, 7 mOhm HS
  • Current - Output / Channel: 40A
  • Current - Peak Output: 60A
  • Voltage - Supply: 5.5 V ~ 27.5 V
  • Voltage - Load: 5.5 V ~ 27.5 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Features: Latch Function, Slew Rate Controlled, Status Flag
  • Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
  • Supplier Device Package: P-TO-263-7
封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
库存26,472
C165LM3VHAFXUMA1
Infineon Technologies

IC MCU 16BIT ROMLESS 100MQFP

  • Core Processor: C166
  • Core Size: 16-Bit
  • Speed: 20MHz
  • Connectivity: EBI/EMI, SPI, UART/USART
  • Peripherals: POR, PWM, WDT
  • Number of I/O: 77
  • Program Memory Size: -
  • Program Memory Type: ROMless
  • EEPROM Size: -
  • RAM Size: 2K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
  • Data Converters: -
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 100-BQFP
  • Supplier Device Package: 100-MQFP (14x20)
封装: 100-BQFP
库存4,112
ESD18VU1B02LSE6327XTSA1
Infineon Technologies

TVS DIODE 18.5VWM 17VC TSSLP2-1

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 18.5V (Max)
  • Voltage - Breakdown (Min): 20V
  • Voltage - Clamping (Max) @ Ipp: 17V (Typ)
  • Current - Peak Pulse (10/1000µs): 2A (8/20µs)
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: RF Antenna
  • Capacitance @ Frequency: 0.3pF @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 2-XFDFN
  • Supplier Device Package: TSSLP-2-1
封装: 2-XFDFN
库存8,244
TLE49643MXTSA1
Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SOT23-3

  • Function: Unipolar Switch
  • Technology: Hall Effect
  • Polarization: South Pole
  • Sensing Range: 16.6mT Trip, 6.1mT Release
  • Test Condition: 25°C
  • Voltage - Supply: 3 V ~ 32 V
  • Current - Supply (Max): 2.5mA
  • Current - Output (Max): 25mA
  • Output Type: Open Drain
  • Features: Temperature Compensated
  • Operating Temperature: -40°C ~ 170°C (TJ)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-15
封装: TO-236-3, SC-59, SOT-23-3
库存6,534
IR3536MSM02TRP
Infineon Technologies

IC REGULATOR PG-VQFN-48-901

  • Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
  • Voltage - Input: 3.3V
  • Number of Outputs: 2
  • Voltage - Output: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-VQFN (7x7)
封装: 48-VFQFN Exposed Pad
库存6,352
IPTG007N06NM5ATMA1
Infineon Technologies

MOSFET N-CH 60V 53A/454A HSOG-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8-1
  • Package / Case: 8-PowerSMD, Gull Wing
封装: -
库存10,728
S29PL064J70BFI070
Infineon Technologies

IC FLASH 64MBIT PARALLEL 48VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (8.15x6.15)
封装: -
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IDDD04G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 13A HDSOP-10

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 13A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 14 µA @ 420 V
  • Capacitance @ Vr, F: 205pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-PowerSOP Module
  • Supplier Device Package: PG-HDSOP-10-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存14,805
FF6MR12W2M1HPB11BPSA1
Infineon Technologies

SIC 2N-CH 1200V 200A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
  • Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存54
CY25245OXC
Infineon Technologies

CY25245B-SPC

  • Type: Frequency Generator
  • PLL: Yes
  • Input: Clock, Crystal
  • Output: Clock
  • Number of Circuits: 1
  • Ratio - Input:Output: 1:1
  • Differential - Input:Output: No/No
  • Frequency - Max: 166MHz
  • Divider/Multiplier: Yes/No
  • Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 20-SSOP
封装: -
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CYPD7291-68LDXS
Infineon Technologies

TYPE-C - AUTO

  • Applications: USB Type C
  • Core Processor: ARM® Cortex®-M0
  • Program Memory Type: FLASH (128kB), ROM (32kB)
  • Controller Series: EZ-PD™
  • RAM Size: 16K x 8
  • Interface: I2C, SPI, UART, USB
  • Number of I/O: 19
  • Voltage - Supply: 4V ~ 24V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 68-VFQFN Exposed Pad
  • Supplier Device Package: 68-QFN (10x10)
封装: -
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FS200R12N3T4RB81BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO3-4

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存30
S28HS02GTFPBHB150
Infineon Technologies

SEMPER

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Octal I/O
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-FBGA (8x8)
封装: -
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CYTMA445-48LQI36AE
Infineon Technologies

IC SCREEN CNTRL 32BIT 48QFN

  • Touchscreen: 2 Wire Capacitive
  • Resolution (Bits): 32 b
  • Interface: I2C, SPI
  • Voltage Reference: -
  • Voltage - Supply: 1.71V ~ 5.5V
  • Current - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 48-UFQFN Exposed Pad
  • Supplier Device Package: 48-QFN (6x6)
封装: -
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BSM100GB170DLCHOSA1
Infineon Technologies

IGBT MOD 1700V 200A 960W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 200 A
  • Power - Max: 960 W
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 200 µA
  • Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
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BSO203SP
Infineon Technologies

P-CHANNEL POWER MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-8
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
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CY8C4024PVS-S412T
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
  • Number of I/O: 24
  • Program Memory Size: 16KB (16K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 2K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b; D/A 1x7/1x8b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 28-SSOP
封装: -
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CG9172AFT
Infineon Technologies

ASYNC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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ICE2PCS03GHUMA1
Infineon Technologies

POWER FACTOR CONTROLLER, CURRENT

  • Mode: Continuous Conduction (CCM)
  • Frequency - Switching: 100kHz
  • Current - Startup: 450 µA
  • Voltage - Supply: 11V ~ 25V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-1
封装: -
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