页 384 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
SGB15N60HSATMA1	Infineon Technologies	IGBT 600V 27A 138W TO263-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 27A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A Power - Max: 138W Switching Energy: 530µJ Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 13ns/209ns Test Condition: 400V, 15A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存4,912
IKU06N60RBKMA1	Infineon Technologies	IGBT 600V 12A 100W TO251-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A Power - Max: 100W Switching Energy: 330µJ Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25°C: 12ns/127ns Test Condition: 400V, 6A, 23 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: PG-TO251-3	封装: TO-251-3 Short Leads, IPak, TO-251AA	库存2,784
SPP80N08S2L-07	Infineon Technologies	MOSFET N-CH 75V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 233nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: TO-220-3	库存7,504
BSP123E6327T	Infineon Technologies	MOSFET N-CH 100V 370MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 1.8V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.79W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 370mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	封装: TO-261-4, TO-261AA	库存3,296
BSP170PE6327	Infineon Technologies	MOSFET P-CH 60V 1.9A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	封装: TO-261-4, TO-261AA	库存4,288
AUIRF7759L2TR	Infineon Technologies	MOSFET N-CH 75V 160A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12222pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 96A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	封装: DirectFET? Isometric L8	库存7,344
AUIRF2804	Infineon Technologies	MOSFET N-CH 40V 195A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: TO-220-3	库存4,272
IRF6711STRPBF	Infineon Technologies	MOSFET N-CH 25V 19A DIRECTFET-SQ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	封装: DirectFET? Isometric SQ	库存4,752
IPP80P03P4L07AKSA1	Infineon Technologies	MOSFET P-CH 30V 80A TO220-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: TO-220-3	库存3,440
IPD78CN10NGATMA1	Infineon Technologies	MOSFET N-CH 100V 13A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存3,584
BCV47E6327HTSA1	Infineon Technologies	TRANS NPN DARL 60V 0.5A SOT-23 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 360mW Frequency - Transition: 170MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存92,142
TLE42994GMXUMA1	Infineon Technologies	IC REG LINEAR 5V 150MA 14DSO Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 45V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.5V @ 100mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 1µA ~ 2mA PSRR: 66dB (100Hz) Control Features: Enable, Reset Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-14	封装: 14-SOIC (0.154", 3.90mm Width)	库存18,798
ITS640S2HKSA1	Infineon Technologies	IC SWITCH HISIDE SMART TO220-7 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 5 V ~ 34 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4A Rds On (Typ): 27 mOhm Input Type: Non-Inverting Features: Auto Restart, Status Flag Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Operating Temperature: -30°C ~ 85°C (TA) Package / Case: TO-220-7 (Formed Leads) Supplier Device Package: PG-TO220-7	封装: TO-220-7 (Formed Leads)	库存6,016
IR2011S	Infineon Technologies	HI/LO SIDE DRVR 8SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.7V, 2.2V Current - Peak Output (Source, Sink): 1A, 1A Input Type: Inverting High Side Voltage - Max (Bootstrap): 200V Rise / Fall Time (Typ): 35ns, 20ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存314,196
ESD8V0L1B-02LRH E6433	Infineon Technologies	TVS DIODE 14VWM 21VC TSLP2 Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 14V (Max) Voltage - Breakdown (Min): 14.5V (Typ) Voltage - Clamping (Max) @ Ipp: 21V (Typ) Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2	封装: SOD-882	库存6,714
CY8C4248FNQ-BL583T	Infineon Technologies	IC MCU 32BIT 256KB FLASH 76WLCSP Core Processor: ARM® Cortex®-M0 Core Size: 32-Bit Speed: 48MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Number of I/O: 36 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 8x12b SAR; D/A 2x7b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 76-UFBGA, WLCSP Supplier Device Package: 76-WLCSP (4.04x3.87)	封装: -	Request a Quote
IPB65R190CFDATMA1	Infineon Technologies	MOSFET N-CH 650V 17.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote
IMI111T026HXUMA1	Infineon Technologies	IMOTION Motor Type - Stepper: Multiphase Motor Type - AC, DC: AC, Synchronous Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (3) Interface: Analog, PWM, UART Technology: IGBT Step Resolution: - Applications: Fan Motor Driver Current - Output: 2A Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V Voltage - Load: 600V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads Supplier Device Package: PG-DSO-22-1	封装: -	Request a Quote
CP7417ATT	Infineon Technologies	SEMICONDUCTOR OTHER Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
CG8876AM	Infineon Technologies	IC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
CYPD6227-96BZXIT	Infineon Technologies	CCG6 Applications: USB Type C Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH (64kB), ROM (96kB) Controller Series: - RAM Size: 16K x 8 Interface: I2C, SPI, UART, USB Number of I/O: 23 Voltage - Supply: 2.75V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-BGA (6x6)	封装: -	库存5,700
TD430N22KOFHPSA2	Infineon Technologies	SCR MODULE 2200V 800A MODULE Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 2.2 kV Current - On State (It (AV)) (Max): 430 A Current - On State (It (RMS)) (Max): 800 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module	封装: -	Request a Quote
CY7C128A-25VC	Infineon Technologies	IC SRAM 16KBIT 25NS 24SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 24-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 24-SOJ	封装: -	Request a Quote
FF450R33T3E3P3BPMA1	Infineon Technologies	IGBT MOD 3300V 450A AGXHP100-3 IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 3300 V Current - Collector (Ic) (Max): 450 A Power - Max: 1000000 W Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-XHP100-3	封装: -	Request a Quote
FF23MR12W1M1C11BPSA1	Infineon Technologies	LOW POWER EASY AG-EASY1BM-2 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
D4600U45X172XPSA1	Infineon Technologies	DIODE GP 4.5KV 4450A D17226K-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 4450A Voltage - Forward (Vf) (Max) @ If: 2 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: BG-D17226K-1 Operating Temperature - Junction: 140°C (Max)	封装: -	库存3
CY9BF312NBGL-GK9E1	Infineon Technologies	IC MCU 32BIT 160KB FLASH 112BGA Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 144MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 83 Program Memory Size: 160KB (160K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 16x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 112-LFBGA Supplier Device Package: 112-PFBGA (10x10)	封装: -	Request a Quote
CYT3BB7CEBQ0AEEGST	Infineon Technologies	IC MCU 32BT 4.0625MB FLSH 144QFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 Core Size: 32-Bit Dual-Core Speed: 100MHz, 250MHz Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 116 Program Memory Size: 4.0625MB (4.0625M x 8) Program Memory Type: FLASH EEPROM Size: 256K x 8 RAM Size: 768K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 70x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Supplier Device Package: 144-TEQFP (20x20)	封装: -	Request a Quote
S25FL256LAGBHA020	Infineon Technologies	IC FLASH 256MBIT SPI/QUAD 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	封装: -	Request a Quote
IAUCN04S7L005ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 430A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-43 Package / Case: 8-PowerTDFN	封装: -	库存3,000

SGB15N60HSATMA1

Infineon Technologies

IGBT 600V 27A 138W TO263-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 27A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A
Power - Max: 138W
Switching Energy: 530µJ
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 13ns/209ns
Test Condition: 400V, 15A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存4,912

IKU06N60RBKMA1

Infineon Technologies

IGBT 600V 12A 100W TO251-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 12A
Current - Collector Pulsed (Icm): 18A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Power - Max: 100W
Switching Energy: 330µJ
Input Type: Standard
Gate Charge: 48nC
Td (on/off) @ 25°C: 12ns/127ns
Test Condition: 400V, 6A, 23 Ohm, 15V
Reverse Recovery Time (trr): 68ns
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存2,784

SPP80N08S2L-07

Infineon Technologies

MOSFET N-CH 75V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 233nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 67A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存7,504

BSP123E6327T

Infineon Technologies

MOSFET N-CH 100V 370MA SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 370mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存3,296

BSP170PE6327

Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存4,288

AUIRF7759L2TR

Infineon Technologies

MOSFET N-CH 75V 160A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 12222pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 96A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET L8
Package / Case: DirectFET? Isometric L8

封装: DirectFET? Isometric L8

库存7,344

AUIRF2804

Infineon Technologies

MOSFET N-CH 40V 195A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: TO-220-3

库存4,272

IRF6711STRPBF

Infineon Technologies

MOSFET N-CH 25V 19A DIRECTFET-SQ

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? SQ
Package / Case: DirectFET? Isometric SQ

封装: DirectFET? Isometric SQ

库存4,752

IPP80P03P4L07AKSA1

Infineon Technologies

MOSFET P-CH 30V 80A TO220-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存3,440

IPD78CN10NGATMA1

Infineon Technologies

MOSFET N-CH 100V 13A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 716pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,584

BCV47E6327HTSA1

Infineon Technologies

TRANS NPN DARL 60V 0.5A SOT-23

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 360mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存92,142

TLE42994GMXUMA1

Infineon Technologies

IC REG LINEAR 5V 150MA 14DSO

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 45V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.5V @ 100mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 1µA ~ 2mA
PSRR: 66dB (100Hz)
Control Features: Enable, Reset
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-14

封装: 14-SOIC (0.154", 3.90mm Width)

库存18,798

ITS640S2HKSA1

Infineon Technologies

IC SWITCH HISIDE SMART TO220-7

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 5 V ~ 34 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Rds On (Typ): 27 mOhm
Input Type: Non-Inverting
Features: Auto Restart, Status Flag
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature: -30°C ~ 85°C (TA)
Package / Case: TO-220-7 (Formed Leads)
Supplier Device Package: PG-TO220-7

封装: TO-220-7 (Formed Leads)

库存6,016

IR2011S

Infineon Technologies

HI/LO SIDE DRVR 8SOIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200V
Rise / Fall Time (Typ): 35ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存314,196

ESD8V0L1B-02LRH E6433

Infineon Technologies

TVS DIODE 14VWM 21VC TSLP2

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 14V (Max)
Voltage - Breakdown (Min): 14.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 21V (Typ)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: PG-TSLP-2

封装: SOD-882

库存6,714

CY8C4248FNQ-BL583T

Infineon Technologies

IC MCU 32BIT 256KB FLASH 76WLCSP

Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit
Speed: 48MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Number of I/O: 36
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 8x12b SAR; D/A 2x7b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 76-UFBGA, WLCSP
Supplier Device Package: 76-WLCSP (4.04x3.87)

封装: -

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IPB65R190CFDATMA1

Infineon Technologies

MOSFET N-CH 650V 17.5A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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IMI111T026HXUMA1

Infineon Technologies

IMOTION

Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (3)
Interface: Analog, PWM, UART
Technology: IGBT
Step Resolution: -
Applications: Fan Motor Driver
Current - Output: 2A
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Voltage - Load: 600V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Supplier Device Package: PG-DSO-22-1

封装: -

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CP7417ATT

Infineon Technologies

SEMICONDUCTOR OTHER

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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CG8876AM

Infineon Technologies

IC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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CYPD6227-96BZXIT

Infineon Technologies

CCG6

Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (64kB), ROM (96kB)
Controller Series: -
RAM Size: 16K x 8
Interface: I2C, SPI, UART, USB
Number of I/O: 23
Voltage - Supply: 2.75V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-BGA (6x6)

封装: -

库存5,700

TD430N22KOFHPSA2

Infineon Technologies

SCR MODULE 2200V 800A MODULE

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 2.2 kV
Current - On State (It (AV)) (Max): 430 A
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module

封装: -

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CY7C128A-25VC

Infineon Technologies

IC SRAM 16KBIT 25NS 24SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 24-SOJ

封装: -

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FF450R33T3E3P3BPMA1

Infineon Technologies

IGBT MOD 3300V 450A AGXHP100-3

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 450 A
Power - Max: 1000000 W
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: -
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-XHP100-3

封装: -

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FF23MR12W1M1C11BPSA1

Infineon Technologies

LOW POWER EASY AG-EASY1BM-2

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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D4600U45X172XPSA1

Infineon Technologies

DIODE GP 4.5KV 4450A D17226K-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Average Rectified (Io): 4450A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 2500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 mA @ 4500 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: BG-D17226K-1
Operating Temperature - Junction: 140°C (Max)

封装: -

库存3

CY9BF312NBGL-GK9E1

Infineon Technologies

IC MCU 32BIT 160KB FLASH 112BGA

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 144MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 83
Program Memory Size: 160KB (160K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 16x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Supplier Device Package: 112-PFBGA (10x10)

封装: -

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CYT3BB7CEBQ0AEEGST

Infineon Technologies

IC MCU 32BT 4.0625MB FLSH 144QFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 250MHz
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 116
Program Memory Size: 4.0625MB (4.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 256K x 8
RAM Size: 768K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 70x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Supplier Device Package: 144-TEQFP (20x20)

封装: -

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S25FL256LAGBHA020

Infineon Technologies

IC FLASH 256MBIT SPI/QUAD 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

封装: -

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IAUCN04S7L005ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 430A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 20 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 88A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-43
Package / Case: 8-PowerTDFN

封装: -

库存3,000