| 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IGBT 650V 10A TO220 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 650V
 - Current - Collector (Ic) (Max): 20A
 - Current - Collector Pulsed (Icm): 30A
 - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
 - Power - Max: 30W
 - Switching Energy: 180µJ (on), 130µJ (off)
 - Input Type: Standard
 - Gate Charge: 24nC
 - Td (on/off) @ 25°C: 12ns/91ns
 - Test Condition: 400V, 10A, 30 Ohm, 15V
 - Reverse Recovery Time (trr): 263ns
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-220-3
 - Supplier Device Package: TO-220
 
                                     
                                
                             
                         | 
                        封装: TO-220-3  | 
                        库存19,656  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 20V SOT23 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存3,584  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 20V 12.5A TO252 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 20V
 - Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 2.5V, 4.5V
 - Vgs(th) (Max) @ Id: 1.4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
 - Vgs (Max): ±12V
 - FET Feature: -
 - Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
 - Rds On (Max) @ Id, Vgs: 75 mOhm @ 12.5A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-252, (D-Pak)
 - Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
 
                                     
                                
                             
                         | 
                        封装: TO-252-3, DPak (2 Leads + Tab), SC-63  | 
                        库存5,184  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 19A 8SOIC 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 3.1W (Ta)
 - Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 19A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-SO
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存6,752  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N CH 30V 28.5A 8DFN 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 28.5A (Ta), 72A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 15V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 5.6W (Ta), 35.5W (Tc)
 - Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (5x6)
 - Package / Case: 8-PowerSMD, Flat Leads
 
                                     
                                
                             
                         | 
                        封装: 8-PowerSMD, Flat Leads  | 
                        库存3,504  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 75V 10A TO220 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 75V
 - Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 140A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 3.9V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 30V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 1.9W (Ta), 417W (Tc)
 - Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 30A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220
 - Package / Case: TO-220-3
 
                                     
                                
                             
                         | 
                        封装: TO-220-3  | 
                        库存7,616  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 75V 10A TO252 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 75V
 - Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 20V
 - Vgs(th) (Max) @ Id: 3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
 - Vgs (Max): ±25V
 - FET Feature: -
 - Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
 - Rds On (Max) @ Id, Vgs: 130 mOhm @ 5A, 20V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-252, (D-Pak)
 - Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
 
                                     
                                
                             
                         | 
                        封装: TO-252-3, DPak (2 Leads + Tab), SC-63  | 
                        库存118,452  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 60V 20A TO263 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 60V
 - Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 6V, 10V
 - Vgs(th) (Max) @ Id: 3.2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 30V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
 - Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (D2Pak)
 - Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
                         | 
                        封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB  | 
                        库存6,896  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 30V 12.5A 8SOIC 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 15V
 - Vgs (Max): ±25V
 - FET Feature: -
 - Power Dissipation (Max): 3W (Ta)
 - Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.5A, 20V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-SOIC
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存173,688  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 80V 16A TO263 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 80V
 - Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 105A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 6V, 10V
 - Vgs(th) (Max) @ Id: 3.3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 5154pF @ 40V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.1W (Ta), 250W (Tc)
 - Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (D2Pak)
 - Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
                         | 
                        封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB  | 
                        库存3,280  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 600V 11A TO220F 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 600V
 - Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 50V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 50W (Tc)
 - Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220-3F
 - Package / Case: TO-220-3 Full Pack
 
                                     
                                
                             
                         | 
                        封装: TO-220-3 Full Pack  | 
                        库存14,160  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 620V 11A TO220F 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 620V
 - Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 39W (Tc)
 - Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220-3F
 - Package / Case: TO-220-3 Full Pack
 
                                     
                                
                             
                         | 
                        封装: TO-220-3 Full Pack  | 
                        库存7,104  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 24V 8DFN 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存5,136  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 100V 51A D2PAK 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 100V
 - Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 51A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 7V, 10V
 - Vgs(th) (Max) @ Id: 4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V
 - Vgs (Max): ±25V
 - FET Feature: -
 - Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
 - Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (D2Pak)
 - Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
                         | 
                        封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB  | 
                        库存19,500  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 36V 23A 8SOIC 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 36V
 - Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2345pF @ 18V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 4.2W (Ta)
 - Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-SOIC
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存5,936  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 600V 20A TO247 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 600V
 - Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 417W (Tc)
 - Rds On (Max) @ Id, Vgs: 370 mOhm @ 10A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-247
 - Package / Case: TO-247-3
 
                                     
                                
                             
                         | 
                        封装: TO-247-3  | 
                        库存6,576  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 36A DFN 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 85A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 15V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 6.2W (Ta), 42W (Tc)
 - Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (5x6)
 - Package / Case: 8-PowerSMD, Flat Leads
 
                                     
                                
                             
                         | 
                        封装: 8-PowerSMD, Flat Leads  | 
                        库存3,360  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH DUAL 8TSSOP 
                                
                                    
                                    - FET Type: 2 P-Channel (Dual)
 - FET Feature: Standard
 - Drain to Source Voltage (Vdss): 20V
 - Current - Continuous Drain (Id) @ 25°C: 4.7A
 - Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.7A, 4.5V
 - Vgs(th) (Max) @ Id: 1V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 10V
 - Power - Max: 1.4W
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: 8-TSSOP (0.173", 4.40mm Width)
 - Supplier Device Package: 8-TSSOP
 
                                     
                                
                             
                         | 
                        封装: 8-TSSOP (0.173", 4.40mm Width)  | 
                        库存292,896  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET 2N-CH 20V 7.6A 8-SOIC 
                                
                                    
                                    - FET Type: 2 N-Channel (Dual)
 - FET Feature: Logic Level Gate
 - Drain to Source Voltage (Vdss): 20V
 - Current - Continuous Drain (Id) @ 25°C: 7.6A
 - Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
 - Vgs(th) (Max) @ Id: 1.1V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
 - Power - Max: 2W
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 - Supplier Device Package: 8-SO
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存4,560  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC REG BUCK ADJ 3A SYNC 8SOIC 
                                
                                    
                                    - Function: Step-Down
 - Output Configuration: Positive
 - Topology: Buck
 - Output Type: Adjustable
 - Number of Outputs: 1
 - Voltage - Input (Min): 4.5V
 - Voltage - Input (Max): 18V
 - Voltage - Output (Min/Fixed): 0.8V
 - Voltage - Output (Max): 15.3V
 - Current - Output: 3A
 - Frequency - Switching: 500kHz
 - Synchronous Rectifier: Yes
 - Operating Temperature: -40°C ~ 85°C (TA)
 - Mounting Type: Surface Mount
 - Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
 - Supplier Device Package: 8-SO Exposed Pad
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width) Exposed Pad  | 
                        库存6,416  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC PWR DIST SW USB 1CH 8MSOP 
                                
                                    
                                    - Switch Type: USB Switch
 - Number of Outputs: 1
 - Ratio - Input:Output: 1:1
 - Output Configuration: High Side
 - Output Type: N-Channel
 - Interface: On/Off
 - Voltage - Load: 2.7 V ~ 5.5 V
 - Voltage - Supply (Vcc/Vdd): Not Required
 - Current - Output (Max): 1.5A
 - Rds On (Typ): 70 mOhm
 - Input Type: Non-Inverting
 - Features: Status Flag
 - Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
 - Operating Temperature: -40°C ~ 125°C (TJ)
 - Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
 - Supplier Device Package: 8-MSOP-EP
 
                                     
                                
                             
                         | 
                        封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad  | 
                        库存203,604  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                TVS DIODE 5VWM 15.5VC SOT23-6L 
                                
                                    
                                    - Type: Steering (Rail to Rail)
 - Unidirectional Channels: 4
 - Bidirectional Channels: -
 - Voltage - Reverse Standoff (Typ): 5V (Max)
 - Voltage - Breakdown (Min): 6V
 - Voltage - Clamping (Max) @ Ipp: 15.5V
 - Current - Peak Pulse (10/1000µs): 1A (8/20µs)
 - Power - Peak Pulse: -
 - Power Line Protection: Yes
 - Applications: HDMI
 - Capacitance @ Frequency: 0.7pF @ 1MHz
 - Operating Temperature: -40°C ~ 125°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: SOT-23-6
 - Supplier Device Package: SOT-23-6
 
                                     
                                
                             
                         | 
                        封装: SOT-23-6  | 
                        库存334,716  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                N 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30 V
 - Current - Continuous Drain (Id) @ 25°C: 84A (Ta), 200A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 6.5V, 10V
 - Vgs(th) (Max) @ Id: 2.2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 15 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
 - Rds On (Max) @ Id, Vgs: 0.68mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (5x6)
 - Package / Case: 8-PowerSMD, Flat Leads
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IGBT 15A 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 650 V
 - Current - Collector (Ic) (Max): 30 A
 - Current - Collector Pulsed (Icm): 45 A
 - Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
 - Power - Max: 214 W
 - Switching Energy: 290µJ (on), 200µJ (off)
 - Input Type: Standard
 - Gate Charge: 32 nC
 - Td (on/off) @ 25°C: 15ns/94ns
 - Test Condition: 400V, 15A, 20Ohm, 15V
 - Reverse Recovery Time (trr): 106 ns
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-220-3
 - Supplier Device Package: TO-220
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 600V 38A TO263 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 600 V
 - Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 378W (Tc)
 - Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (D2PAK)
 - Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                N 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 40 V
 - Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 105A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 8.3W (Ta), 119W (Tc)
 - Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (D2PAK)
 - Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET 2P-CH 20V 5.1A 8TSSOP 
                                
                                    
                                    - FET Type: MOSFET (Metal Oxide)
 - FET Feature: -
 - Drain to Source Voltage (Vdss): 20V
 - Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
 - Rds On (Max) @ Id, Vgs: 40mOhm @ 5.1A, 4.5V
 - Vgs(th) (Max) @ Id: 950mV @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
 - Power - Max: 1.5W (Ta)
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: 8-TSSOP (0.173", 4.40mm Width)
 - Supplier Device Package: 8-TSSOP
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                1200V SILICON CARBIDE MOSFET 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: SiC (Silicon Carbide Junction Transistor)
 - Drain to Source Voltage (Vdss): 1200 V
 - Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 15V
 - Vgs(th) (Max) @ Id: 3.6V @ 3.9mA
 - Gate Charge (Qg) (Max) @ Vgs: 28.3 nC @ 15 V
 - Input Capacitance (Ciss) (Max) @ Vds: 664 pF @ 800 V
 - Vgs (Max): +18V, -8V
 - FET Feature: -
 - Power Dissipation (Max): 115W (Tj)
 - Rds On (Max) @ Id, Vgs: 195mOhm @ 3.9A, 15V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-247
 - Package / Case: TO-247-3
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IGBT 5A 650V TO252 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 650 V
 - Current - Collector (Ic) (Max): 10 A
 - Current - Collector Pulsed (Icm): 15 A
 - Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
 - Power - Max: 52 W
 - Switching Energy: 90µJ (on), 60µJ (off)
 - Input Type: Standard
 - Gate Charge: 8.8 nC
 - Td (on/off) @ 25°C: 7ns/78ns
 - Test Condition: 400V, 5A, 60Ohm, 15V
 - Reverse Recovery Time (trr): 74 ns
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
 - Supplier Device Package: TO-252 (DPAK)
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                30V 55A QFN5X5 DRMOS POWER STAGE 
                                
                                    
                                    - Output Configuration: Half Bridge
 - Applications: Synchronous Buck Converters
 - Interface: PWM
 - Load Type: Inductive, Capacitive
 - Technology: DrMOS
 - Rds On (Typ): -
 - Current - Output / Channel: 55A
 - Current - Peak Output: 120A
 - Voltage - Supply: 4.5V ~ 5.5V
 - Voltage - Load: 4.5V ~ 25V
 - Operating Temperature: -40°C ~ 150°C (TJ)
 - Features: Bootstrap Circuit, Diode Emulation, Status Flag
 - Fault Protection: Over Temperature, Shoot-Through, UVLO
 - Mounting Type: Surface Mount
 - Package / Case: 31-PowerVFQFN Module
 - Supplier Device Package: 31-QFN (5x5)
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存7,911  | 
                        
                            
                         |