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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IGBT 600V 10A 82.4W TO220 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 600V
 - Current - Collector (Ic) (Max): 23A
 - Current - Collector Pulsed (Icm): 20A
 - Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
 - Power - Max: 82.4W
 - Switching Energy: 140µJ (on), 40µJ (off)
 - Input Type: Standard
 - Gate Charge: 9.4nC
 - Td (on/off) @ 25°C: 12ns/83ns
 - Test Condition: 400V, 5A, 60 Ohm, 15V
 - Reverse Recovery Time (trr): 98ns
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-220-3
 - Supplier Device Package: TO-220
 
                                     
                                
                             
                         | 
                        封装: TO-220-3  | 
                        库存254,340  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IGBT 650V 15A TO220 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 650V
 - Current - Collector (Ic) (Max): 30A
 - Current - Collector Pulsed (Icm): 45A
 - Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
 - Power - Max: 214W
 - Switching Energy: 290µJ (on), 200µJ (off)
 - Input Type: Standard
 - Gate Charge: 32nC
 - Td (on/off) @ 25°C: 13ns/116ns
 - Test Condition: 400V, 15A, 20 Ohm, 15V
 - Reverse Recovery Time (trr): 317ns
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-220-3
 - Supplier Device Package: TO-220
 
                                     
                                
                             
                         | 
                        封装: TO-220-3  | 
                        库存12,372  | 
                        
                            
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                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IGBT 650V 10A TO220 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 650V
 - Current - Collector (Ic) (Max): 20A
 - Current - Collector Pulsed (Icm): 30A
 - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
 - Power - Max: 30W
 - Switching Energy: 180µJ (on), 130µJ (off)
 - Input Type: Standard
 - Gate Charge: 24nC
 - Td (on/off) @ 25°C: 12ns/91ns
 - Test Condition: 400V, 10A, 30 Ohm, 15V
 - Reverse Recovery Time (trr): 262ns
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-220-3
 - Supplier Device Package: TO-220
 
                                     
                                
                             
                         | 
                        封装: TO-220-3  | 
                        库存14,676  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 60V 24A 8DFN 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 60V
 - Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 30V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 34.7W (Tc)
 - Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (3x3)
 - Package / Case: 8-PowerVDFN
 
                                     
                                
                             
                         | 
                        封装: 8-PowerVDFN  | 
                        库存6,976  | 
                        
                            
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                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 15A 8-SOIC 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 3.1W (Ta)
 - Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 15A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-SO
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存5,648  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 60V 23A TO263 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 60V
 - Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 30V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
 - Rds On (Max) @ Id, Vgs: 19 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (D2Pak)
 - Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
                         | 
                        封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB  | 
                        库存3,840  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 105V 40A TO-220 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 105V
 - Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 6V, 10V
 - Vgs(th) (Max) @ Id: 4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2445pF @ 25V
 - Vgs (Max): ±25V
 - FET Feature: -
 - Power Dissipation (Max): 100W (Tc)
 - Rds On (Max) @ Id, Vgs: 28 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220
 - Package / Case: TO-220-3
 
                                     
                                
                             
                         | 
                        封装: TO-220-3  | 
                        库存15,360  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 100V 120A TO263 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: Surface Mount
 - Supplier Device Package: TO-263 (D2Pak)
 - Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
 
                                     
                                
                             
                         | 
                        封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB  | 
                        库存3,344  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 600V 12A TO220F 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 600V
 - Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 50W (Tc)
 - Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220-3F
 - Package / Case: TO-220-3 Full Pack
 
                                     
                                
                             
                         | 
                        封装: TO-220-3 Full Pack  | 
                        库存361,464  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N CH 300V 11.5A TO220 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 300V
 - Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 132W (Tc)
 - Rds On (Max) @ Id, Vgs: 420 mOhm @ 6A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220
 - Package / Case: TO-220-3
 
                                     
                                
                             
                         | 
                        封装: TO-220-3  | 
                        库存7,464  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 40V 20A 8DFN 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 40V
 - Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2805pF @ 20V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
 - Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (5x6)
 - Package / Case: 8-PowerSMD, Flat Leads
 
                                     
                                
                             
                         | 
                        封装: 8-PowerSMD, Flat Leads  | 
                        库存108,000  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 60V 44V 8DFN 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 60V
 - Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 2.3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 30V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 56W (Tc)
 - Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TA)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (5x6)
 - Package / Case: 8-PowerVDFN
 
                                     
                                
                             
                         | 
                        封装: 8-PowerVDFN  | 
                        库存15,960  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET 2N-CH 20V 9.4A 8-SOIC 
                                
                                    
                                    - FET Type: 2 N-Channel (Dual)
 - FET Feature: Logic Level Gate
 - Drain to Source Voltage (Vdss): 20V
 - Current - Continuous Drain (Id) @ 25°C: -
 - Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V
 - Vgs(th) (Max) @ Id: 1V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
 - Power - Max: 2W
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 - Supplier Device Package: 8-SO
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存7,872  | 
                        
                            
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC REGULATOR 
                                
                                    
                                    - Output Configuration: -
 - Output Type: -
 - Number of Regulators: -
 - Voltage - Input (Max): -
 - Voltage - Output (Min/Fixed): -
 - Voltage - Output (Max): -
 - Voltage Dropout (Max): -
 - Current - Output: -
 - Current - Quiescent (Iq): -
 - Current - Supply (Max): -
 - PSRR: -
 - Control Features: -
 - Protection Features: -
 - Operating Temperature: -
 - Mounting Type: -
 - Package / Case: -
 - Supplier Device Package: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存3,008  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC REG BUCK 30A SYNC QFN 
                                
                                    
                                    - Function: Step-Down
 - Output Configuration: Positive
 - Topology: Buck
 - Output Type: -
 - Number of Outputs: 1
 - Voltage - Input (Min): 4.5V
 - Voltage - Input (Max): 25V
 - Voltage - Output (Min/Fixed): -
 - Voltage - Output (Max): -
 - Current - Output: 30A
 - Frequency - Switching: 200kHz ~ 1.5MHz
 - Synchronous Rectifier: Yes
 - Operating Temperature: -40°C ~ 85°C (TA)
 - Mounting Type: Surface Mount
 - Package / Case: 23-VFQFN Exposed Pad
 - Supplier Device Package: 23-QFN (4x4)
 
                                     
                                
                             
                         | 
                        封装: 23-VFQFN Exposed Pad  | 
                        库存7,296  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC LED DRIVER CTLR SOIC 
                                
                                    
                                    - Type: DC DC Controller
 - Topology: Step-Down (Buck)
 - Internal Switch(s): No
 - Number of Outputs: 1
 - Voltage - Supply (Min): 8V
 - Voltage - Supply (Max): 16V
 - Voltage - Output: -
 - Current - Output / Channel: -
 - Frequency: -
 - Dimming: PWM
 - Applications: Backlight, Lighting
 - Operating Temperature: -40°C ~ 85°C (TA)
 - Mounting Type: Surface Mount
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 - Supplier Device Package: 8-SOIC
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存7,616  | 
                        
                            
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                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC REG BUCK 23QFN 
                                
                                    
                                    - Function: -
 - Output Configuration: -
 - Topology: -
 - Output Type: -
 - Number of Outputs: -
 - Voltage - Input (Min): -
 - Voltage - Input (Max): -
 - Voltage - Output (Min/Fixed): -
 - Voltage - Output (Max): -
 - Current - Output: -
 - Frequency - Switching: -
 - Synchronous Rectifier: -
 - Operating Temperature: -
 - Mounting Type: Surface Mount
 - Package / Case: 23-PowerTFQFN
 - Supplier Device Package: 23-QFNA (4x4)
 
                                     
                                
                             
                         | 
                        封装: 23-PowerTFQFN  | 
                        库存3,984  | 
                        
                            
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                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC REG BUCK ADJUSTABLE 3A 8SOIC 
                                
                                    
                                    - Function: Step-Down
 - Output Configuration: Positive
 - Topology: Buck
 - Output Type: Adjustable
 - Number of Outputs: 1
 - Voltage - Input (Min): 4.5V
 - Voltage - Input (Max): 16V
 - Voltage - Output (Min/Fixed): 0.8V
 - Voltage - Output (Max): 16V
 - Current - Output: 3A
 - Frequency - Switching: 500kHz
 - Synchronous Rectifier: Yes
 - Operating Temperature: -40°C ~ 85°C (TA)
 - Mounting Type: Surface Mount
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 - Supplier Device Package: 8-SOIC
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存6,400  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC REG BUCK ADJUSTABLE 3A 8SOIC 
                                
                                    
                                    - Function: Step-Down
 - Output Configuration: Positive
 - Topology: Buck
 - Output Type: Adjustable
 - Number of Outputs: 1
 - Voltage - Input (Min): 4.5V
 - Voltage - Input (Max): 16V
 - Voltage - Output (Min/Fixed): 0.8V
 - Voltage - Output (Max): 16V
 - Current - Output: 3A
 - Frequency - Switching: 500kHz
 - Synchronous Rectifier: No
 - Operating Temperature: -40°C ~ 85°C (TA)
 - Mounting Type: Surface Mount
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 - Supplier Device Package: 8-SOIC
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存3,728  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                N 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 60 V
 - Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 58A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 8V, 10V
 - Vgs(th) (Max) @ Id: 3.6V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 6.2W (Ta), 52W (Tc)
 - Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-251B
 - Package / Case: TO-251-3 Stub Leads, IPAK
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                N 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30 V
 - Current - Continuous Drain (Id) @ 25°C: 88A (Ta), 710A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 1.6V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 12215 pF @ 15 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 7.5W (Ta), 483W (Tc)
 - Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN (5x6)
 - Package / Case: 8-PowerSMD, Flat Leads
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 600V 24A TO262F 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 600 V
 - Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 27.7W (Tc)
 - Rds On (Max) @ Id, Vgs: 160mOhm @ 12A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-262F
 - Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 3.7A SC70-3 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30 V
 - Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 2.5V, 10V
 - Vgs(th) (Max) @ Id: 1.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
 - Vgs (Max): ±12V
 - FET Feature: -
 - Power Dissipation (Max): 1.1W (Ta)
 - Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: SC-70-3
 - Package / Case: SC-70, SOT-323
 
                                     
                                
                             
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET 2N-CH 12V 25A 10DFN 
                                
                                    
                                    - FET Type: MOSFET (Metal Oxide)
 - FET Feature: -
 - Drain to Source Voltage (Vdss): 12V
 - Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
 - Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
 - Vgs(th) (Max) @ Id: 1.1V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Power - Max: 2.2W (Ta)
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: 10-SMD, No Lead
 - Supplier Device Package: 10-AlphaDFN (3.01x1.52)
 
                                     
                                
                             
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 7A 6TSOP 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30 V
 - Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2W (Ta)
 - Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 6-TSOP
 - Package / Case: SC-74, SOT-457
 
                                     
                                
                             
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 8DFN 5X6 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH ASYMMETRIC 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                650V SILICON CARBIDE MOSFET 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: SiCFET (Silicon Carbide)
 - Drain to Source Voltage (Vdss): 650 V
 - Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 15V
 - Vgs(th) (Max) @ Id: 3.5V @ 6mA
 - Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
 - Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
 - Vgs (Max): +15V, -5V
 - FET Feature: -
 - Power Dissipation (Max): 103W (Tc)
 - Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-247-4L
 - Package / Case: TO-247-4
 
                                     
                                
                             
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 20V 3.5A SOT23-3 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 20 V
 - Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 1.8V, 10V
 - Vgs(th) (Max) @ Id: 1.2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
 - Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 10 V
 - Vgs (Max): ±12V
 - FET Feature: -
 - Power Dissipation (Max): 1.4W (Ta)
 - Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: SOT-23-3
 - Package / Case: 3-SMD, SOT-23-3 Variant
 
                                     
                                
                             
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                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 400V 8A TO220 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 400 V
 - Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 132W (Tc)
 - Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220
 - Package / Case: TO-220-3
 
                                     
                                
                             
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