| 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IGBT 650V 10A TO263 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 650V
 - Current - Collector (Ic) (Max): 20A
 - Current - Collector Pulsed (Icm): 30A
 - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
 - Power - Max: 150W
 - Switching Energy: 180µJ (on), 130µJ (off)
 - Input Type: Standard
 - Gate Charge: 24nC
 - Td (on/off) @ 25°C: 12ns/91ns
 - Test Condition: 400V, 10A, 30 Ohm, 15V
 - Reverse Recovery Time (trr): 262ns
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
 - Supplier Device Package: TO-263 (D2Pak)
 
                                     
                                
                             
                         | 
                        封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB  | 
                        库存3,120  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 40V TO252 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存3,616  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 40V TO252 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): -
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): -
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存5,552  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH TO-252 
                                
                                    
                                    - FET Type: -
 - Technology: -
 - Drain to Source Voltage (Vdss): -
 - Current - Continuous Drain (Id) @ 25°C: -
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: -
 - Gate Charge (Qg) (Max) @ Vgs: -
 - Input Capacitance (Ciss) (Max) @ Vds: -
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): -
 - Rds On (Max) @ Id, Vgs: -
 - Operating Temperature: -
 - Mounting Type: -
 - Supplier Device Package: -
 - Package / Case: -
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存5,936  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 25V 37A DFN3.3X3.3 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 25V
 - Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 50A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 1.8V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 3554pF @ 12.5V
 - Vgs (Max): ±12V
 - FET Feature: -
 - Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
 - Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN-EP (3.3x3.3)
 - Package / Case: 8-PowerWDFN
 
                                     
                                
                             
                         | 
                        封装: 8-PowerWDFN  | 
                        库存25,008  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 15A TO251A 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 55A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 15V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
 - Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-251A
 - Package / Case: TO-251-3 Stub Leads, IPak
 
                                     
                                
                             
                         | 
                        封装: TO-251-3 Stub Leads, IPak  | 
                        库存7,456  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 30V 2.3A 6TSOP 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 2.5V, 10V
 - Vgs(th) (Max) @ Id: 1.4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 15V
 - Vgs (Max): ±12V
 - FET Feature: Schottky Diode (Isolated)
 - Power Dissipation (Max): 1.15W (Ta)
 - Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.3A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 6-TSOP
 - Package / Case: SC-74, SOT-457
 
                                     
                                
                             
                         | 
                        封装: SC-74, SOT-457  | 
                        库存321,960  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 600V 11A TO251A 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 600V
 - Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.1V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 208W (Tc)
 - Rds On (Max) @ Id, Vgs: 399 mOhm @ 3.8A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-251A
 - Package / Case: TO-251-3 Stub Leads, IPak
 
                                     
                                
                             
                         | 
                        封装: TO-251-3 Stub Leads, IPak  | 
                        库存41,880  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 105V 5.8A TO220FL 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 105V
 - Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 26A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 6V, 10V
 - Vgs(th) (Max) @ Id: 4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2445pF @ 25V
 - Vgs (Max): ±25V
 - FET Feature: -
 - Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
 - Rds On (Max) @ Id, Vgs: 28 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220FL
 - Package / Case: TO-220-3 Full Pack
 
                                     
                                
                             
                         | 
                        封装: TO-220-3 Full Pack  | 
                        库存4,560  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 100V 6A TO220F 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 100V
 - Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 7V, 10V
 - Vgs(th) (Max) @ Id: 4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V
 - Vgs (Max): ±25V
 - FET Feature: -
 - Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
 - Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220-3F
 - Package / Case: TO-220-3 Full Pack
 
                                     
                                
                             
                         | 
                        封装: TO-220-3 Full Pack  | 
                        库存6,688  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 600V 4A TO262F 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 600V
 - Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 25W (Tc)
 - Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: -
 - Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
 
                                     
                                
                             
                         | 
                        封装: TO-262-3 Long Leads, I2Pak, TO-262AA  | 
                        库存3,200  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 100V 6A 8SOIC 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 100V
 - Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.7V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 50V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 3.1W (Ta)
 - Rds On (Max) @ Id, Vgs: 37 mOhm @ 6A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-SOIC
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存36,672  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 12A 8SOIC 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 2.5W (Ta)
 - Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-SOIC
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存2,965,284  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 55V 2.1A SOT23 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 55V
 - Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 2.5V, 4.5V
 - Vgs(th) (Max) @ Id: 2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
 - Vgs (Max): ±12V
 - FET Feature: -
 - Power Dissipation (Max): 1.25W (Ta)
 - Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.1A, 4.5V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: SOT-23-3L
 - Package / Case: TO-236-3, SC-59, SOT-23-3
 
                                     
                                
                             
                         | 
                        封装: TO-236-3, SC-59, SOT-23-3  | 
                        库存428,856  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 20V 6A SOT23 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 20V
 - Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 1.8V, 10V
 - Vgs(th) (Max) @ Id: 1V @ 1mA
 - Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
 - Vgs (Max): ±12V
 - FET Feature: -
 - Power Dissipation (Max): 1.4W (Ta)
 - Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: SOT-23-3L
 - Package / Case: TO-236-3, SC-59, SOT-23-3
 
                                     
                                
                             
                         | 
                        封装: TO-236-3, SC-59, SOT-23-3  | 
                        库存180,000  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 2A SOT23 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
 - Drive Voltage (Max Rds On,  Min Rds On): 2.5V, 10V
 - Vgs(th) (Max) @ Id: 1.8V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V
 - Vgs (Max): ±12V
 - FET Feature: -
 - Power Dissipation (Max): 1.4W (Ta)
 - Rds On (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: SOT-23-3L
 - Package / Case: TO-236-3, SC-59, SOT-23-3
 
                                     
                                
                             
                         | 
                        封装: TO-236-3, SC-59, SOT-23-3  | 
                        库存133,368  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 650V 11A TO220F 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 650V
 - Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 100V
 - Vgs (Max): ±30V
 - FET Feature: -
 - Power Dissipation (Max): 31W (Tc)
 - Rds On (Max) @ Id, Vgs: 399 mOhm @ 5.5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220-3F
 - Package / Case: TO-220-3 Full Pack
 
                                     
                                
                             
                         | 
                        封装: TO-220-3 Full Pack  | 
                        库存6,816  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH SC89-3 
                                
                                    
                                    - FET Type: 2 N-Channel (Dual)
 - FET Feature: Standard
 - Drain to Source Voltage (Vdss): 20V
 - Current - Continuous Drain (Id) @ 25°C: 500mA
 - Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V
 - Vgs(th) (Max) @ Id: 1V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
 - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
 - Power - Max: 280mW
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: SOT-563, SOT-666
 - Supplier Device Package: SC-89-6
 
                                     
                                
                             
                         | 
                        封装: SOT-563, SOT-666  | 
                        库存17,568  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC REGULATOR BUCK SOIC 
                                
                                    
                                    - Function: Step-Down
 - Output Configuration: Positive
 - Topology: Buck
 - Output Type: Adjustable
 - Number of Outputs: 1
 - Voltage - Input (Min): 4.5V
 - Voltage - Input (Max): 16V
 - Voltage - Output (Min/Fixed): 0.8V
 - Voltage - Output (Max): 16V
 - Current - Output: 3A
 - Frequency - Switching: 500kHz
 - Synchronous Rectifier: Yes
 - Operating Temperature: -40°C ~ 85°C (TA)
 - Mounting Type: Surface Mount
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 - Supplier Device Package: 8-SO
 
                                     
                                
                             
                         | 
                        封装: 8-SOIC (0.154", 3.90mm Width)  | 
                        库存5,744  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                10A 5.5V LOAD SWITCH 
                                
                                    
                                    - Switch Type: General Purpose
 - Number of Outputs: 1
 - Ratio - Input:Output: 1:1
 - Output Configuration: High Side
 - Output Type: N-Channel
 - Interface: On/Off
 - Voltage - Load: 0.8 V ~ 4 V
 - Voltage - Supply (Vcc/Vdd): Not Required
 - Current - Output (Max): 10A
 - Rds On (Typ): 4.6 mOhm
 - Input Type: -
 - Features: Load Discharge
 - Fault Protection: -
 - Operating Temperature: -40°C ~ 85°C (TA)
 - Package / Case: 8-PowerWDFN
 - Supplier Device Package: 8-DFN-EP (3x3)
 
                                     
                                
                             
                         | 
                        封装: 8-PowerWDFN  | 
                        库存61,560  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IC LED DRVR RGLTR DIM 20MA 16QFN 
                                
                                    
                                    - Type: DC DC Regulator
 - Topology: Step-Up (Boost)
 - Internal Switch(s): Yes
 - Number of Outputs: 3
 - Voltage - Supply (Min): 2.7V
 - Voltage - Supply (Max): 25V
 - Voltage - Output: 40V
 - Current - Output / Channel: 20mA
 - Frequency: 800kHz
 - Dimming: PWM
 - Applications: Backlight
 - Operating Temperature: -40°C ~ 85°C (TA)
 - Mounting Type: Surface Mount
 - Package / Case: 16-VQFN Exposed Pad
 - Supplier Device Package: 16-QFN (3x3)
 
                                     
                                
                             
                         | 
                        封装: 16-VQFN Exposed Pad  | 
                        库存1,080,000  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                POWER IC EZBUCK 
                                
                                    
                                    - Function: Step-Down
 - Output Configuration: Positive
 - Topology: Buck
 - Output Type: Adjustable
 - Number of Outputs: 1
 - Voltage - Input (Min): 6.5V
 - Voltage - Input (Max): 28V
 - Voltage - Output (Min/Fixed): 0.6V
 - Voltage - Output (Max): 1.791V
 - Current - Output: 4A
 - Frequency - Switching: 400kHz
 - Synchronous Rectifier: Yes
 - Operating Temperature: -40°C ~ 85°C (TA)
 - Mounting Type: Surface Mount
 - Package / Case: 22-PowerTFQFN
 - Supplier Device Package: 22-QFN (4x4)
 
                                     
                                
                             
                         | 
                        封装: 22-PowerTFQFN  | 
                        库存25,866  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IGBT 8A 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 650 V
 - Current - Collector (Ic) (Max): 16 A
 - Current - Collector Pulsed (Icm): 24 A
 - Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 8A
 - Power - Max: 89 W
 - Switching Energy: 160µJ (on), 110µJ (off)
 - Input Type: Standard
 - Gate Charge: 22 nC
 - Td (on/off) @ 25°C: 8.5ns/102ns
 - Test Condition: 400V, 8A, 37.5Ohm, 15V
 - Reverse Recovery Time (trr): 94 ns
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
 - Supplier Device Package: TO-252 (DPAK)
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 100V 16.5A ULTRASO-8 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 100 V
 - Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.6V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
 - Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: UltraSO-8™
 - Package / Case: 3-PowerSMD, Flat Leads
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                IGBT 60A 
                                
                                    
                                    - IGBT Type: -
 - Voltage - Collector Emitter Breakdown (Max): 650 V
 - Current - Collector (Ic) (Max): 120 A
 - Current - Collector Pulsed (Icm): 180 A
 - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
 - Power - Max: 500 W
 - Switching Energy: 2.21mJ (on), 1.2mJ (off)
 - Input Type: Standard
 - Gate Charge: 84 nC
 - Td (on/off) @ 25°C: 36ns/157ns
 - Test Condition: 400V, 60A, 5Ohm, 15V
 - Reverse Recovery Time (trr): 106 ns
 - Operating Temperature: -55°C ~ 175°C (TJ)
 - Mounting Type: Through Hole
 - Package / Case: TO-247-3
 - Supplier Device Package: TO-247
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET P-CH 30V 24A 8DFN 
                                
                                    
                                    - FET Type: P-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30 V
 - Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
 - Vgs (Max): ±25V
 - FET Feature: -
 - Power Dissipation (Max): 5W (Ta), 28W (Tc)
 - Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN-EP (3x3)
 - Package / Case: 8-PowerVDFN
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存149,541  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET 2P-CH 30V 5A 8SOIC 
                                
                                    
                                    - FET Type: MOSFET (Metal Oxide)
 - FET Feature: -
 - Drain to Source Voltage (Vdss): 30V
 - Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
 - Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
 - Vgs(th) (Max) @ Id: 2.2V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
 - Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
 - Power - Max: 1.7W
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Package / Case: 8-SOIC (0.154", 3.90mm Width)
 - Supplier Device Package: 8-SOIC
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存163,830  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                DUAL DIGITAL MULTI-PHASE CONTROL 
                                
                                    
                                    - Applications: Digital Power Controller
 - Voltage - Input: -
 - Voltage - Supply: 3.3V
 - Current - Supply: -
 - Operating Temperature: -
 - Mounting Type: Surface Mount
 - Package / Case: 40-VFQFN Exposed Pad
 - Supplier Device Package: 40-QFN-EP (5x5)
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存8,970  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 600V 28A TO220F 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 600 V
 - Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
 - Drive Voltage (Max Rds On,  Min Rds On): 10V
 - Vgs(th) (Max) @ Id: 4.5V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 36W (Tc)
 - Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-220F
 - Package / Case: TO-220-3 Full Pack
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        Request a Quote  | 
                        
                            
                         | 
                    
                
            
                
                    
                        | 
                            
                         | 
                        
                            
                         | 
                        Alpha & Omega Semiconductor Inc.  | 
                        
                            
                                MOSFET N-CH 30V 9.5A/12A 8DFN 
                                
                                    
                                    - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 30 V
 - Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 12A (Tc)
 - Drive Voltage (Max Rds On,  Min Rds On): 4.5V, 10V
 - Vgs(th) (Max) @ Id: 2.3V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
 - Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
 - Vgs (Max): ±20V
 - FET Feature: -
 - Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
 - Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Surface Mount
 - Supplier Device Package: 8-DFN-EP (3x3)
 - Package / Case: 8-PowerVDFN
 
                                     
                                
                             
                         | 
                        封装: -  | 
                        库存27,816  | 
                        
                            
                         |