页 393 - Infineon Technologies 产品 | 黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  393/567
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IRG4IBC20KD
Infineon Technologies

IGBT 600V 11.5A 34W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11.5A
  • Current - Collector Pulsed (Icm): 23A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
  • Power - Max: 34W
  • Switching Energy: 340µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: 54ns/180ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
封装: TO-220-3 Full Pack
库存3,056
AUIRGS30B60K
Infineon Technologies

IGBT 600V 78A 370W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
  • Power - Max: 370W
  • Switching Energy: 350µJ (on), 825µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 46ns/185ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,672
IPB80N06S2L05ATMA1
Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,864
IRF6713STR1PBF
Infineon Technologies

MOSFET N-CH 25V 22A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 22A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? SQ
  • Package / Case: DirectFET? Isometric SQ
封装: DirectFET? Isometric SQ
库存2,320
hot IRF6613TR1PBF
Infineon Technologies

MOSFET N-CH 40V 23A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 23A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MT
  • Package / Case: DirectFET? Isometric MT
封装: DirectFET? Isometric MT
库存93,204
IRF7458PBF
Infineon Technologies

MOSFET N-CH 30V 14A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 16V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,976
hot BUZ30A
Infineon Technologies

MOSFET N-CH 200V 21A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存34,956
hot IRFR18N15DTR
Infineon Technologies

MOSFET N-CH 150V 18A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,600
IRF1104STRL
Infineon Technologies

MOSFET N-CH 40V 100A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,592
IPB032N10N5ATMA1
Infineon Technologies

DIFFERENTIATED MOSFETS

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存5,824
AUIRF2907ZS7PTL
Infineon Technologies

MOSFET N-CH 75V 180A D2PAK-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
库存6,368
IRFHM8228TRPBF
Infineon Technologies

MOSFET N-CH 25V 19A 8PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1667pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (3.3x3.3), Power33
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存4,608
IRFS52N15DTRLP
Infineon Technologies

MOSFET N-CH 150V 51A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2770pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,232
hot IPA086N10N3 G
Infineon Technologies

MOSFET N-CH 100V 45A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 75µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存390,360
hot IRF7204TRPBF
Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存1,730,328
BCR 139L3 E6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSLP-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
封装: SC-101, SOT-883
库存4,512
BAT6404WE6327HTSA1
Infineon Technologies

DIODE ARRAY SCHOTTKY 40V SOT323

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 120mA
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 30V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封装: SC-70, SOT-323
库存6,416
IFX25001TS V85
Infineon Technologies

IC REG LINEAR 8.5V 400MA TO220-3

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 8.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 250mA
  • Current - Output: 400mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 220µA ~ 30mA
  • PSRR: 60dB (100Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封装: TO-220-3
库存3,664
hot IRU1117-18CY
Infineon Technologies

IC REG LINEAR 1.8V 800MA SOT223

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 7V
  • Voltage - Output (Min/Fixed): 1.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.3V @ 1A
  • Current - Output: 800mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封装: TO-261-4, TO-261AA
库存5,824
CDM10VDXTSA1
Infineon Technologies

IC DIMMER 0-10V SOT23

  • Applications: Dimming Controller
  • Current - Supply: -
  • Voltage - Supply: 11 V ~ 25 V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存27,726
hot TLE6214L
Infineon Technologies

IC SWITCH DUAL CURR SENSE PDSO12

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: SPI
  • Voltage - Load: 4.5 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): 5A
  • Rds On (Typ): 180 mOhm
  • Input Type: -
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
  • Supplier Device Package: P-DSO-12
封装: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
库存187,656
hot IR2110STR
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 3.3 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
封装: 16-SOIC (0.295", 7.50mm Width)
库存15,780
hot IR2308PBF
Infineon Technologies

IC MOSFET/IGBT DVR HV HS 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
封装: 8-DIP (0.300", 7.62mm)
库存5,840
XMC4400F100K512ABXQSA1
Infineon Technologies

IC MCU 32BIT 512KB FLASH 100LQFP

  • Core Processor: ARM? Cortex?-M4
  • Core Size: 32-Bit
  • Speed: 120MHz
  • Connectivity: CAN, Ethernet, I2C, LIN, SPI, UART, USB
  • Peripherals: DMA, I2S, LED, POR, PWM, WDT
  • Number of I/O: 55
  • Program Memory Size: 512KB (512K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 80K x 8
  • Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
  • Data Converters: A/D 24x12b, D/A 2x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: 100-LQFP (14x14)
封装: 100-LQFP Exposed Pad
库存4,752
XMC4402F64K256BAXQMA1
Infineon Technologies

IC MCU 32BIT 256KB FLASH 64LQFP

  • Core Processor: ARM? Cortex?-M4
  • Core Size: 32-Bit
  • Speed: 120MHz
  • Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
  • Peripherals: DMA, I2S, LED, POR, PWM, WDT
  • Number of I/O: 31
  • Program Memory Size: 256KB (256K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 80K x 8
  • Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
  • Data Converters: A/D 14x12b; D/A 2x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 64-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-64-19
封装: 64-LQFP Exposed Pad
库存2,416
SLE66R04PNBZZZA1
Infineon Technologies

IC SECURITY CHIP CARD CTLR

  • Applications: -
  • Core Processor: -
  • Program Memory Type: -
  • Controller Series: -
  • RAM Size: -
  • Interface: -
  • Number of I/O: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,520
ESD5V0H1U-02LS E6327
Infineon Technologies

TVS DIODE 5VWM 40VC TSSLP2

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V (Max)
  • Voltage - Breakdown (Min): -
  • Voltage - Clamping (Max) @ Ipp: 40V (Typ)
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 0.27pF @ 1MHz
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 2-XFDFN
  • Supplier Device Package: PG-TSSLP-2
封装: 2-XFDFN
库存7,092
TDA5102-TDA5212_915_5
Infineon Technologies

KIT SAMPLE FSK TX/RX 915MHZ

  • Type: Transmitter, Receiver
  • Frequency: 915MHz
  • For Use With/Related Products: TDA5102, TDA5212
  • Supplied Contents: 2 Boards
封装: -
库存7,866
BGM15LA12E6327XTSA1
Infineon Technologies

IC AMP MMIC 12ATSLP

  • Frequency: 700MHz ~ 1GHz
  • P1dB: -11dBm
  • Gain: 17.5dB
  • Noise Figure: 1.1dB
  • RF Type: LTE, W-CDMA
  • Voltage - Supply: 2.2 V ~ 3.3 V
  • Current - Supply: 4.9mA
  • Test Frequency: -
  • Package / Case: 12-UFQFN Exposed Pad
  • Supplier Device Package: ATSLP-12-3
封装: 12-UFQFN Exposed Pad
库存37,560
XC2361E72F128LAAKXQMA1
Infineon Technologies

IC MCU 16BIT 100LQFP

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,912