页 392 - Infineon Technologies 产品 | 黑森尔电子
联系我们
SalesDept@heisener.com +86-755-83210559 ext. 807
登入/注册
BOM
购物车 0

Infineon Technologies 产品

记录 16,988
页  392/567
图片
零件编号
制造商
描述
封装
库存
数量
IRGS4607DPBF
Infineon Technologies

IGBT 600V 11A 58W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
  • Power - Max: 58W
  • Switching Energy: 140µJ (on), 62µJ (off)
  • Input Type: Standard
  • Gate Charge: 9nC
  • Td (on/off) @ 25°C: 27ns/120ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 48ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,416
hot IRGBC20FD2
Infineon Technologies

IGBT W/DIODE 600V 16A TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存14,820
hot IRGP4660D-EPBF
Infineon Technologies

IGBT 600V 100A 330W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 625µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 60ns/145ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存23,268
IRG7T100HF12B
Infineon Technologies

MOD IGBT 1200V 100A POWIR 62

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 680W
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
  • Current - Collector Cutoff (Max): 2mA
  • Input Capacitance (Cies) @ Vce: 13nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: POWIR? 62 Module
  • Supplier Device Package: POWIR? 62
封装: POWIR? 62 Module
库存2,992
IRF7353D2PBF
Infineon Technologies

MOSFET N-CH 30V 6.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,032
IRL1104LPBF
Infineon Technologies

MOSFET N-CH 40V 104A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存4,320
hot IRLR8113
Infineon Technologies

MOSFET N-CH 30V 94A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2920pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存4,752
hot SPP20N60S5
Infineon Technologies

MOSFET N-CH 650V 20A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封装: TO-220-3
库存789,084
hot IRF7523D1TR
Infineon Technologies

MOSFET N-CH 30V 2.7A MICRO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8?
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
库存48,000
SPW47N65C3FKSA1
Infineon Technologies

MOSFET N-CH 650V 47A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 415W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存4,320
AUIRF2804STRL7P
Infineon Technologies

MOSFET N-CH 40V 320A D2PAK-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
库存4,912
IPP100N10S305AKSA1
Infineon Technologies

MOSFET N-CH 100V 100A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封装: TO-220-3
库存19,992
hot IRFB7446GPBF
Infineon Technologies

MOSFET N CH 40V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3183pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 99W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 70A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存38,640
hot IRF3808PBF
Infineon Technologies

MOSFET N-CH 75V 140A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 82A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存90,840
hot IRLHS2242TRPBF
Infineon Technologies

MOSFET P-CH 20V 15A 2X2 PQFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 9.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 8.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-PQFN (2x2)
  • Package / Case: 6-PowerVDFN
封装: 6-PowerVDFN
库存119,160
hot IRLML6401TRPBF
Infineon Technologies

MOSFET P-CH 12V 4.3A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存25,991,016
hot IRF7904PBF
Infineon Technologies

MOSFET 2N-CH 30V 7.6A/11A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
  • Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
  • Power - Max: 1.4W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存117,360
IRAM256-1567A
Infineon Technologies

IC MOD PWR HYBRID 600V 10A

  • Type: IGBT
  • Configuration: 3 Phase
  • Current: 15A
  • Voltage: 600V
  • Voltage - Isolation: 2000Vrms
  • Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
封装: 29-PowerSSIP Module, 21 Leads, Formed Leads
库存5,712
TLE4276GV85ATMA1
Infineon Technologies

IC REG LINEAR 8.5V 400MA TO220-5

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 8.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 250mA
  • Current - Output: 400mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 200µA ~ 25mA
  • PSRR: 54dB (100Hz)
  • Control Features: Inhibit
  • Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: P-TO220-5-122
封装: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
库存3,008
hot TLE42764GV
Infineon Technologies

IC REG LIN POS ADJ 400MA TO263-5

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): 20V
  • Voltage Dropout (Max): 0.5V @ 250mA
  • Current - Output: 400mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 220µA ~ 25mA
  • PSRR: 54dB (100Hz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: PG-TO263-5
封装: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
库存38,328
hot IPS0151S
Infineon Technologies

IC MOSFET PWR SWITCH D2PAK

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 35V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 3.8A
  • Rds On (Typ): 20 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存26,556
IRS25803DSPBF
Infineon Technologies

SEMICONDUCTOR OTHER

  • Mode: Critical Conduction (CRM)
  • Frequency - Switching: -
  • Current - Startup: -
  • Voltage - Supply: 470V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,032
TLE82092EXUMA2
Infineon Technologies

IC MOTOR DRIVER SPI 20DSO

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: SPI
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: Automotive
  • Current - Output: 8.6A
  • Voltage - Supply: 4.4 V ~ 5.25 V
  • Voltage - Load: 4.5 V ~ 28 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
  • Supplier Device Package: PG-DSO-20-65
封装: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
库存3,712
IRSM515-084DA2
Infineon Technologies

IC MOTOR DRIVER 600V 23DIP

  • Output Configuration: Half Bridge (3)
  • Applications: AC Motors
  • Interface: Logic
  • Load Type: Inductive
  • Technology: UMOS
  • Rds On (Typ): 340 mOhm
  • Current - Output / Channel: 4.6A
  • Current - Peak Output: 15A
  • Voltage - Supply: 13.5 V ~ 16.5 V
  • Voltage - Load: 200V (Max)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Features: Bootstrap Circuit
  • Fault Protection: UVLO
  • Mounting Type: Through Hole
  • Package / Case: 23-DIP Module
  • Supplier Device Package: 23-DIPA
封装: 23-DIP Module
库存6,464
TC264D40F200WBBKXUMA1
Infineon Technologies

IC MCU 32BIT 2.5MB FLASH 144TQFP

  • Core Processor: TriCore?
  • Core Size: 32-Bit Dual-Core
  • Speed: 200MHz
  • Connectivity: ASC, CAN, Ethernet, FlexRay, HSSL, I2C, LIN, MSC, PSI5, QSPI, SENT
  • Peripherals: DMA, WDT
  • Number of I/O: 88
  • Program Memory Size: 2.5MB (2.5M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 96K x 8
  • RAM Size: 240K x 8
  • Voltage - Supply (Vcc/Vdd): 3.3V, 5V
  • Data Converters: A/D 40x12b, 3 x Sigma-Delta
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,992
BGA 428 E6327
Infineon Technologies

IC OP AMP HG LNA RF SOT363

  • Frequency: 1.4GHz ~ 2.5GHz
  • P1dB: -19dBm
  • Gain: 20dB
  • Noise Figure: 1.4dB
  • RF Type: Cellular, GSM, DCS, PCS
  • Voltage - Supply: 2.4 V ~ 3 V
  • Current - Supply: 12mA
  • Test Frequency: 1.8GHz
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
封装: 6-VSSOP, SC-88, SOT-363
库存3,816
hot PVA3324NS
Infineon Technologies

IC RELAY PHOTOVO 300V 150MA 8SMD

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 24 Ohm
  • Load Current: 150mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 300 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 8-SMD (0.300", 7.62mm) 4 Leads
  • Supplier Device Package: 8-SMT Modified
  • Relay Type: Relay
封装: 8-SMD (0.300", 7.62mm) 4 Leads
库存192,000
CHL8112A-12CRT
Infineon Technologies

IC REG BUCK 40VQFN

  • Output Type: -
  • Function: -
  • Output Configuration: -
  • Topology: -
  • Number of Outputs: -
  • Output Phases: -
  • Voltage - Supply (Vcc/Vdd): -
  • Frequency - Switching: -
  • Duty Cycle (Max): -
  • Synchronous Rectifier: -
  • Clock Sync: -
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,336
BTS72002EPAXUMA1
Infineon Technologies

PROFET

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 6V ~ 18V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.2A
  • Rds On (Typ): 66.5mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TSDSO-14-22
封装: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
库存29,250
BTF3035EJXUMA1
Infineon Technologies

HITFET

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: PWM
  • Voltage - Load: 3V ~ 28V
  • Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
  • Current - Output (Max): 5A
  • Rds On (Typ): 32mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TDSO-8-31
封装: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
库存3,472