|
|
Infineon Technologies |
IGBT 650V D2-PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 21A
- Current - Collector Pulsed (Icm): 24A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
- Power - Max: 100W
- Switching Energy: 200µJ (on), 90µJ (off)
- Input Type: Standard
- Gate Charge: 30nC
- Td (on/off) @ 25°C: 30ns/100ns
- Test Condition: 400V, 8A, 50 Ohm, 15V
- Reverse Recovery Time (trr): 86ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,696 |
|
|
|
Infineon Technologies |
IGBT 1200V 99A 350W SUPER247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 99A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
- Power - Max: 350W
- Switching Energy: 4.77mJ (on), 9.54mJ (off)
- Input Type: Standard
- Gate Charge: 370nC
- Td (on/off) @ 25°C: 51ns/280ns
- Test Condition: 960V, 70A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-274AA
- Supplier Device Package: SUPER-247 (TO-274AA)
|
封装: TO-274AA |
库存67,764 |
|
|
|
Infineon Technologies |
IGBT 650V 18A 70W PG-TO220-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 18A
- Current - Collector Pulsed (Icm): 24A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
- Power - Max: 70W
- Switching Energy: 70µJ (on), 20µJ (off)
- Input Type: Standard
- Gate Charge: 22nC
- Td (on/off) @ 25°C: 10ns/116ns
- Test Condition: 400V, 4A, 48 Ohm, 15V
- Reverse Recovery Time (trr): 41ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
|
封装: TO-220-3 |
库存8,460 |
|
|
|
Infineon Technologies |
IGBT 600V 140A 454W TO247AC
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 140A
- Current - Collector Pulsed (Icm): 225A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 454W
- Switching Energy: 2.47mJ (on), 2.16mJ (off)
- Input Type: Standard
- Gate Charge: 150nC
- Td (on/off) @ 25°C: 50ns/200ns
- Test Condition: 400V, 75A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
|
封装: TO-247-3 |
库存6,612 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 9.9A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 25V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 14.6 mOhm @ 9.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,440 |
|
|
|
Infineon Technologies |
MOSFET N-CH 240V 350MA SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
|
封装: TO-261-4, TO-261AA |
库存3,456 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 54A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 26A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
封装: TO-220-3 |
库存4,128 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 33A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存14,820 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 70A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
封装: TO-220-3 |
库存2,352 |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 19A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存66,420 |
|
|
|
Infineon Technologies |
CONSUMER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
封装: - |
库存6,288 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 47A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存15,096 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 77A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
封装: TO-220-3 |
库存18,444 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 14.5A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 95W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存120,012 |
|
|
|
Infineon Technologies |
MOSFET N-CH 700V 12.8A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 30.5W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,456 |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 100A TDSON-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.1V @ 345µA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
|
封装: 8-PowerTDFN |
库存514,242 |
|
|
|
Infineon Technologies |
TRANS PNP 45V 1A SOT-223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
|
封装: TO-261-4, TO-261AA |
库存6,432 |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 40V 20MA SOT343
- Diode Type: Schottky - 2 Independent
- Voltage - Peak Reverse (Max): 40V
- Current - Max: 20mA
- Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
|
封装: SC-82A, SOT-343 |
库存6,800 |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 140µA @ 650V
- Capacitance @ Vr, F: 250pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-1
- Operating Temperature - Junction: -55°C ~ 175°C
|
封装: TO-220-2 |
库存7,184 |
|
|
|
Infineon Technologies |
DIODE ARRAY GP 35V 100MA SOT23
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io) (per Diode): 100mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 120ns
- Current - Reverse Leakage @ Vr: 20nA @ 20V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存7,872 |
|
|
|
Infineon Technologies |
DIODE ARRAY GP 200V 250MA SC74-6
- Diode Configuration: 3 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 200V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: PG-SC74-6
|
封装: SC-74, SOT-457 |
库存2,768 |
|
|
|
Infineon Technologies |
IC CTRLR PWM MULTI CPU PDSO-32
- Applications: PWM Controller, CPU core
- Voltage - Input: 4.5 V ~ 5.5 V
- Number of Outputs: 4
- Voltage - Output: 0.8375 V ~ 1.6 V
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 32-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 32-DSO
|
封装: 32-SOIC (0.295", 7.50mm Width) |
库存5,904 |
|
|
|
Infineon Technologies |
IC REG LINEAR 5V 400MA TO252-3
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 250mA
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 220µA ~ 30mA
- PSRR: 60dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存131,502 |
|
|
|
Infineon Technologies |
INTELLIGENT POWER SW 1CH SOT223
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 28V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.4A
- Rds On (Typ): 160 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
封装: TO-261-4, TO-261AA |
库存7,632 |
|
|
|
Infineon Technologies |
IC DRIVER GATE 50A PQFN
- Output Configuration: -
- Applications: Synchronous Buck Converters, Voltage Regulators
- Interface: PWM
- Load Type: Inductive
- Technology: -
- Rds On (Typ): -
- Current - Output / Channel: 50A
- Current - Peak Output: -
- Voltage - Supply: 4.5 V ~ 7 V
- Voltage - Load: 4.5 V ~ 15 V
- Operating Temperature: -
- Features: Diode Emulation, Status Flag
- Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
- Mounting Type: Surface Mount
- Package / Case: 30-PowerVFQFN
- Supplier Device Package: 30-PQFN (6x6)
|
封装: 30-PowerVFQFN |
库存7,740 |
|
|
|
Infineon Technologies |
IC OFFLINE CTRLR SMPS CM TO220
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 650V
- Topology: Flyback
- Voltage - Start Up: 15V
- Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
- Duty Cycle: 72%
- Frequency - Switching: 100kHz
- Power (Watts): 170W
- Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -25°C ~ 130°C (TJ)
- Package / Case: TO-220-6 Formed Leads
- Supplier Device Package: PG-TO220-6
- Mounting Type: Through Hole
|
封装: TO-220-6 Formed Leads |
库存6,640 |
|
|
|
Infineon Technologies |
IC MCU 32BIT 128KB FLASH 48VQFN
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 80MHz
- Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
- Peripherals: DMA, I2S, LED, POR, PWM, WDT
- Number of I/O: 21
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 20K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 9x12b, D/A 2x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-71
|
封装: 48-VFQFN Exposed Pad |
库存7,232 |
|
|
|
Infineon Technologies |
IC MCU 32BIT 128KB FLASH 64VQFN
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: CAN, I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
- Number of I/O: 48
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 12x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: 64-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-64-6
|
封装: 64-VFQFN Exposed Pad |
库存5,936 |
|
|
|
Infineon Technologies |
IC INTERFACE PROTECTION TSNP14-2
- Type: Interface Protection
- Applications: HSMMC ESD Protection, EMI Filter
- Mounting Type: Surface Mount
- Package / Case: 14-XFQFN Exposed Pad
- Supplier Device Package: PG-TSNP-14-2
|
封装: 14-XFQFN Exposed Pad |
库存2,368 |
|
|
|
Infineon Technologies |
IC MCU 80MQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
封装: - |
库存7,328 |
|