页 51 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  51/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7CH20K10EF
Infineon Technologies

IGBT 1200V DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,944
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKB15N60ATMA1
Infineon Technologies

IGBT 600V 31A 139W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 139W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 32ns/234ns
  • Test Condition: 400V, 15A, 21 Ohm, 15V
  • Reverse Recovery Time (trr): 279ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,080
600V
31A
62A
2.4V @ 15V, 15A
139W
570µJ
Standard
76nC
32ns/234ns
400V, 15A, 21 Ohm, 15V
279ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IRG4BC15MDPBF
Infineon Technologies

IGBT 600V 14A 49W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 28A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8.6A
  • Power - Max: 49W
  • Switching Energy: 320µJ (on), 1.93mJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 21ns/540ns
  • Test Condition: 480V, 8.6A, 75 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存3,200
600V
14A
28A
2.3V @ 15V, 8.6A
49W
320µJ (on), 1.93mJ (off)
Standard
46nC
21ns/540ns
480V, 8.6A, 75 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4RC20F
Infineon Technologies

IGBT 600V 22A 66W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 66W
  • Switching Energy: 190µJ (on), 920µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 26ns/194ns
  • Test Condition: 480V, 12A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,712
600V
22A
44A
2.1V @ 15V, 12A
66W
190µJ (on), 920µJ (off)
Standard
27nC
26ns/194ns
480V, 12A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRG4RC10UTRR
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 80µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 19ns/116ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存6,816
600V
8.5A
34A
2.6V @ 15V, 5A
38W
80µJ (on), 160µJ (off)
Standard
15nC
19ns/116ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4BC20U
Infineon Technologies

IGBT 600V 13A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 100µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 21ns/86ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存6,944
600V
13A
52A
2.1V @ 15V, 6.5A
60W
100µJ (on), 120µJ (off)
Standard
27nC
21ns/86ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGP24N60C4D1
IXYS

IGBT 600V 56A 190W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 130A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 350µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 22ns/192ns
  • Test Condition: 360V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存7,920
600V
56A
130A
2.7V @ 15V, 24A
190W
350µJ (on), 340µJ (off)
Standard
64nC
22ns/192ns
360V, 24A, 10 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IXSK35N120BD1
IXYS

IGBT 1200V 70A 300W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
  • Power - Max: 300W
  • Switching Energy: 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 36ns/160ns
  • Test Condition: 960V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264AA(IXSK)
封装: TO-264-3, TO-264AA
库存5,232
1200V
70A
140A
3.6V @ 15V, 35A
300W
5mJ (off)
Standard
120nC
36ns/160ns
960V, 35A, 5 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264AA(IXSK)
IRG7CH44K10EF
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 60ns/230ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存2,640
1200V
25A
-
2.3V @ 15V, 25A
-
-
Standard
160nC
60ns/230ns
600V, 25A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKP04N60TXKSA1
Infineon Technologies

IGBT 600V 8A 42W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
  • Power - Max: 42W
  • Switching Energy: 143µJ
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 14ns/164ns
  • Test Condition: 400V, 4A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封装: TO-220-3
库存2,352
600V
8A
12A
2.05V @ 15V, 4A
42W
143µJ
Standard
27nC
14ns/164ns
400V, 4A, 47 Ohm, 15V
28ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot IXGH48N60B3D1
IXYS

IGBT 600V 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
  • Power - Max: 300W
  • Switching Energy: 840µJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 22ns/130ns
  • Test Condition: 480V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存52,968
600V
-
280A
1.8V @ 15V, 32A
300W
840µJ (on), 660µJ (off)
Standard
115nC
22ns/130ns
480V, 30A, 5 Ohm, 15V
100ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot IXGH48N60C3D1
IXYS

IGBT 600V 75A 300W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 410µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/60ns
  • Test Condition: 400V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存32,400
600V
75A
250A
2.5V @ 15V, 30A
300W
410µJ (on), 230µJ (off)
Standard
77nC
19ns/60ns
400V, 30A, 3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
RJH60D7DPK-00#T0
Renesas Electronics America

IGBT 600V 90A 300W TO3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 1.1mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 60ns/190ns
  • Test Condition: 300V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存6,144
600V
90A
-
2.2V @ 15V, 50A
300W
1.1mJ (on), 600µJ (off)
Standard
130nC
60ns/190ns
300V, 50A, 5 Ohm, 15V
100ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IRGP4750DPBF
Infineon Technologies

IGBT 650V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Power - Max: 273W
  • Switching Energy: 1.3mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: 50ns/105ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存7,072
650V
70A
105A
2V @ 15V, 35A
273W
1.3mJ (on), 500µJ (off)
Standard
105nC
50ns/105ns
400V, 35A, 10 Ohm, 15V
150ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot SGH40N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 40A 160W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 97nC
  • Td (on/off) @ 25°C: 15ns/65ns
  • Test Condition: 300V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存75,540
600V
40A
160A
2.6V @ 15V, 20A
160W
160µJ (on), 200µJ (off)
Standard
97nC
15ns/65ns
300V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
FGH75T65SHDTL4
Fairchild/ON Semiconductor

IGBT 650V 150A 455W TO-247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 455W
  • Switching Energy: 1.06mJ (on), 1.56mJ (off)
  • Input Type: Standard
  • Gate Charge: 126nC
  • Td (on/off) @ 25°C: 55ns/189ns
  • Test Condition: 400V, 75A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 76ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247
封装: TO-247-4
库存10,284
650V
150A
300A
2.1V @ 15V, 75A
455W
1.06mJ (on), 1.56mJ (off)
Standard
126nC
55ns/189ns
400V, 75A, 15 Ohm, 15V
76ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247
FGH40N65UFDTU_F085
Fairchild/ON Semiconductor

IGBT 650V 40A 290W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 290W
  • Switching Energy: 1.28mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 119nC
  • Td (on/off) @ 25°C: 23ns/126ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存8,832
650V
80A
120A
2.4V @ 15V, 40A
290W
1.28mJ (on), 500µJ (off)
Standard
119nC
23ns/126ns
400V, 40A, 10 Ohm, 15V
65ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
HGT1S10N120BNST
Fairchild/ON Semiconductor

IGBT 1200V 35A 298W TO263AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 298W
  • Switching Energy: 320µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 23ns/165ns
  • Test Condition: 960V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,096
1200V
35A
80A
2.7V @ 15V, 10A
298W
320µJ (on), 800µJ (off)
Standard
100nC
23ns/165ns
960V, 10A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IGW40N65H5FKSA1
Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 255W
  • Switching Energy: 390µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 22ns/165ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: TO-247-3
库存7,712
650V
74A
120A
2.1V @ 15V, 40A
255W
390µJ (on), 120µJ (off)
Standard
95nC
22ns/165ns
400V, 20A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRG4BC40UPBF
Infineon Technologies

IGBT 600V 40A 160W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 320µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 34ns/110ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存39,600
600V
40A
160A
2.1V @ 15V, 20A
160W
320µJ (on), 350µJ (off)
Standard
100nC
34ns/110ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGB20NC60V
STMicroelectronics

IGBT 600V 60A 200W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 220µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 31ns/100ns
  • Test Condition: 390V, 20A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存16,860
600V
60A
100A
2.5V @ 15V, 20A
200W
220µJ (on), 330µJ (off)
Standard
100nC
31ns/100ns
390V, 20A, 3.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRGS14C40LPBF
Infineon Technologies

IGBT 430V 20A 125W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
  • Power - Max: 125W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 900ns/6µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存10,728
430V
20A
-
1.75V @ 5V, 14A
125W
-
Logic
27nC
900ns/6µs
-
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
RGW80TS65HRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 80A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 214 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 42ns/148ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: -
库存1,320
650 V
80 A
160 A
1.9V @ 15V, 40A
214 W
-
Standard
110 nC
42ns/148ns
400V, 20A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
SIGC06T60EX1SA2
Infineon Technologies

IGBT TRENCH FS 600V 10A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
10 A
30 A
1.9V @ 15V, 10A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
STGWA30H65FB
STMicroelectronics

IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260 W
  • Switching Energy: 151mJ (on), 293mJ (off)
  • Input Type: Standard
  • Gate Charge: 149 nC
  • Td (on/off) @ 25°C: 37ns/146ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: -
Request a Quote
650 V
60 A
120 A
2V @ 15V, 30A
260 W
151mJ (on), 293mJ (off)
Standard
149 nC
37ns/146ns
400V, 30A, 10Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
SIGC18T60SNCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 36ns/250ns
  • Test Condition: 400V, 20A, 16Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
36ns/250ns
400V, 20A, 16Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
AUIRGDC0250AKMA1
Infineon Technologies

IGBT 1200V 141A 543W SUPER220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 141 A
  • Current - Collector Pulsed (Icm): 99 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 33A
  • Power - Max: 543 W
  • Switching Energy: 15mJ (off)
  • Input Type: Standard
  • Gate Charge: 151 nC
  • Td (on/off) @ 25°C: -/485ns
  • Test Condition: 600V, 33A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-273AA
  • Supplier Device Package: SUPER-220™ (TO-273AA)
封装: -
库存3,000
1200 V
141 A
99 A
1.8V @ 15V, 33A
543 W
15mJ (off)
Standard
151 nC
-/485ns
600V, 33A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-273AA
SUPER-220™ (TO-273AA)
AOK40B120M1
Alpha & Omega Semiconductor Inc.

IGBT 1200V 40A TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
  • Power - Max: 600 W
  • Switching Energy: 3.87mJ (on), 1.25mJ (off)
  • Input Type: Standard
  • Gate Charge: 140 nC
  • Td (on/off) @ 25°C: 90ns/226ns
  • Test Condition: 600V, 40A, 7.5Ohm, 15V
  • Reverse Recovery Time (trr): 340 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: -
Request a Quote
1200 V
80 A
120 A
2.45V @ 15V, 40A
600 W
3.87mJ (on), 1.25mJ (off)
Standard
140 nC
90ns/226ns
600V, 40A, 7.5Ohm, 15V
340 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
STGWA30HP65FB2
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 30

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 167 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: -/71ns
  • Test Condition: 400V, 30A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): 140 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: -
库存1,797
650 V
50 A
90 A
2.1V @ 15V, 30A
167 W
-
Standard
90 nC
-/71ns
400V, 30A, 6.8Ohm, 15V
140 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGP8M120DF3
STMicroelectronics

TRENCH GATE FIELD-STOP, 1200 V,

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 32 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
  • Power - Max: -
  • Switching Energy: 390µJ (on), 370µJ (Off)
  • Input Type: Standard
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: 20ns/126ns
  • Test Condition: 600V, 8A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 103 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: -
Request a Quote
1200 V
16 A
32 A
2.3V @ 15V, 8A
-
390µJ (on), 370µJ (Off)
Standard
32 nC
20ns/126ns
600V, 8A, 33Ohm, 15V
103 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220