页 53 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  53/148
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零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SKB02N60E3266ATMA1
Infineon Technologies

IGBT 600V 6A 30W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
  • Power - Max: 30W
  • Switching Energy: 64µJ
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 20ns/259ns
  • Test Condition: 400V, 2A, 118 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,968
600V
6A
12A
2.4V @ 15V, 2A
30W
64µJ
Standard
14nC
20ns/259ns
400V, 2A, 118 Ohm, 15V
130ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
SGP30N60HSXKSA1
Infineon Technologies

IGBT 600V 41A 250W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 112A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 1.15mJ
  • Input Type: Standard
  • Gate Charge: 141nC
  • Td (on/off) @ 25°C: 20ns/250ns
  • Test Condition: 400V, 30A, 11 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封装: TO-220-3
库存2,784
600V
41A
112A
3.15V @ 15V, 30A
250W
1.15mJ
Standard
141nC
20ns/250ns
400V, 30A, 11 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot IRG4RC10UTRLPBF
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 80µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 19ns/116ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存249,216
600V
8.5A
34A
2.6V @ 15V, 5A
38W
80µJ (on), 160µJ (off)
Standard
15nC
19ns/116ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4BC20K
Infineon Technologies

IGBT 600V 16A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 150µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: 28ns/150ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存55,200
600V
16A
32A
2.8V @ 15V, 9A
60W
150µJ (on), 250µJ (off)
Standard
34nC
28ns/150ns
480V, 9A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGBL6NC60DIT4
STMicroelectronics

IGBT 600V 14A 56W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
  • Power - Max: 56W
  • Switching Energy: 32µJ (on), 24µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 6.7ns/46ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 23ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,200
600V
14A
18A
2.9V @ 15V, 3A
56W
32µJ (on), 24µJ (off)
Standard
12nC
6.7ns/46ns
390V, 3A, 10 Ohm, 15V
23ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot STGW30N120KD
STMicroelectronics

IGBT 1200V 60A 220W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 20A
  • Power - Max: 220W
  • Switching Energy: 2.4mJ (on), 4.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: 36ns/251ns
  • Test Condition: 960V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 84ns
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存50,928
1200V
60A
100A
3.85V @ 15V, 20A
220W
2.4mJ (on), 4.3mJ (off)
Standard
105nC
36ns/251ns
960V, 20A, 10 Ohm, 15V
84ns
-55°C ~ 125°C (TJ)
Through Hole
TO-247-3
TO-247-3
SGP40N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 40A 160W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 97nC
  • Td (on/off) @ 25°C: 15ns/65ns
  • Test Condition: 300V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: TO-220-3
库存6,000
600V
40A
160A
2.6V @ 15V, 20A
160W
160µJ (on), 200µJ (off)
Standard
97nC
15ns/65ns
300V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
hot IRGS4B60KD1TRRP
Infineon Technologies

IGBT 600V 11A 63W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 63W
  • Switching Energy: 73µJ (on), 47µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 22ns/100ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 93ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,600
600V
11A
22A
2.5V @ 15V, 4A
63W
73µJ (on), 47µJ (off)
Standard
12nC
22ns/100ns
400V, 4A, 100 Ohm, 15V
93ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IKD10N60RFAATMA1
Infineon Technologies

IGBT 600V 20A 150W PG-TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 190µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 12ns/168ns
  • Test Condition: 400V, 10A, 26 Ohm, 15V
  • Reverse Recovery Time (trr): 72ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,864
600V
20A
30A
2.5V @ 15V, 10A
150W
190µJ (on), 160µJ (off)
Standard
64nC
12ns/168ns
400V, 10A, 26 Ohm, 15V
72ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
APT50GN60BG
Microsemi Corporation

IGBT 600V 107A 366W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 107A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: 366W
  • Switching Energy: 1185µJ (on), 1565µJ (off)
  • Input Type: Standard
  • Gate Charge: 325nC
  • Td (on/off) @ 25°C: 20ns/230ns
  • Test Condition: 400V, 50A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存3,216
600V
107A
150A
1.85V @ 15V, 50A
366W
1185µJ (on), 1565µJ (off)
Standard
325nC
20ns/230ns
400V, 50A, 4.3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
STGW60V60DLF
STMicroelectronics

IGBT BIPO 600V 60A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,528
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXGA48N60C3
IXYS

IGBT 600V 75A 300W TO263AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 410µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/60ns
  • Test Condition: 400V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,248
600V
75A
250A
2.5V @ 15V, 30A
300W
410µJ (on), 230µJ (off)
Standard
77nC
19ns/60ns
400V, 30A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
APT85GR120L
Microsemi Corporation

IGBT 1200V 170A 962W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 340A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
  • Power - Max: 962W
  • Switching Energy: 6mJ (on), 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 660nC
  • Td (on/off) @ 25°C: 43ns/300ns
  • Test Condition: 600V, 85A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封装: TO-264-3, TO-264AA
库存6,816
1200V
170A
340A
3.2V @ 15V, 85A
962W
6mJ (on), 3.8mJ (off)
Standard
660nC
43ns/300ns
600V, 85A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
hot APT50GT60BRDQ2G
Microsemi Corporation

IGBT 600V 110A 446W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 446W
  • Switching Energy: 995µJ (on), 1070µJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 14ns/240ns
  • Test Condition: 400V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存46,020
600V
110A
150A
2.5V @ 15V, 50A
446W
995µJ (on), 1070µJ (off)
Standard
240nC
14ns/240ns
400V, 50A, 5 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot STGF15H60DF
STMicroelectronics

IGBT 600V 30A 30W TO220FP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 30W
  • Switching Energy: 136µJ (on), 207µJ (off)
  • Input Type: Standard
  • Gate Charge: 81nC
  • Td (on/off) @ 25°C: 24.5ns/118ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 103ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封装: TO-220-3 Full Pack
库存7,648
600V
30A
60A
2V @ 15V, 15A
30W
136µJ (on), 207µJ (off)
Standard
81nC
24.5ns/118ns
400V, 15A, 10 Ohm, 15V
103ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
IXYN50N170CV1
IXYS

IGBT 1700V 120A SOT227B

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 485A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Power - Max: 880W
  • Switching Energy: 8.7mJ (on), 5.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 260nC
  • Td (on/off) @ 25°C: 22ns/236ns
  • Test Condition: 850V, 50A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): 255ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: SOT-227-4, miniBLOC
库存6,848
1700V
120A
485A
3.7V @ 15V, 50A
880W
8.7mJ (on), 5.6mJ (off)
Standard
260nC
22ns/236ns
850V, 50A, 1 Ohm, 15V
255ns
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
STGB30NC60WT4
STMicroelectronics

IGBT 600V 60A 200W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 305µJ (on), 181µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 29.5ns/118ns
  • Test Condition: 390V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存18,456
600V
60A
150A
2.5V @ 15V, 20A
200W
305µJ (on), 181µJ (off)
Standard
102nC
29.5ns/118ns
390V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IXGH30N120B3D1
IXYS

IGBT 1200V 300W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 3.47mJ (on), 2.16mJ (off)
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 16ns/127ns
  • Test Condition: 960V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存41,340
1200V
-
150A
3.5V @ 15V, 30A
300W
3.47mJ (on), 2.16mJ (off)
Standard
87nC
16ns/127ns
960V, 30A, 5 Ohm, 15V
100ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot APT30GP60BDQ1G
Microsemi Corporation

IGBT 600V 100A 463W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存6,192
600V
100A
120A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
NTE3320
NTE Electronics, Inc

IGBT 600V 50A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
  • Power - Max: 240 W
  • Switching Energy: 1.30mJ (on), 1.34mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 240ns/300ns
  • Test Condition: 300V, 50A, 130Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: -
Request a Quote
600 V
50 A
100 A
2.45V @ 15V, 50A
240 W
1.30mJ (on), 1.34mJ (off)
Standard
-
240ns/300ns
300V, 50A, 130Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
AOK40B65HQ1
Alpha & Omega Semiconductor Inc.

IGBT 40A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
  • Power - Max: 312 W
  • Switching Energy: 1.19mJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 61 nC
  • Td (on/off) @ 25°C: 31ns/110ns
  • Test Condition: 400V, 40A, 7.5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: -
Request a Quote
650 V
80 A
120 A
2.6V @ 15V, 40A
312 W
1.19mJ (on), 380µJ (off)
Standard
61 nC
31ns/110ns
400V, 40A, 7.5Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IKWH20N65WR6XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 55A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 55 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
  • Power - Max: 136 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 97 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
封装: -
库存423
650 V
55 A
60 A
1.7V @ 15V, 20A
136 W
-
Standard
97 nC
-
-
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
IXGA48N60C3-TRL
IXYS

IXGA48N60C3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 250 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 300 W
  • Switching Energy: 410µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 77 nC
  • Td (on/off) @ 25°C: 19ns/60ns
  • Test Condition: 400V, 30A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 26 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封装: -
Request a Quote
600 V
75 A
250 A
2.5V @ 15V, 30A
300 W
410µJ (on), 230µJ (off)
Standard
77 nC
19ns/60ns
400V, 30A, 3Ohm, 15V
26 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IXG100IF1200HF
IXYS

IGBT PT 1200V 140A PLUS247-3

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
封装: -
Request a Quote
1200 V
140 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3 Variant
PLUS247™-3
SIGC18T60UNX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 15ns/65ns
  • Test Condition: 400V, 20A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
20 A
60 A
3.15V @ 15V, 20A
-
-
Standard
-
15ns/65ns
400V, 20A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RGS30NL65DHRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 34A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 34 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 150 W
  • Switching Energy: 360µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 22 nC
  • Td (on/off) @ 25°C: 21ns/93ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 96 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
封装: -
库存3,000
650 V
34 A
45 A
2.1V @ 15V, 15A
150 W
360µJ (on), 400µJ (off)
Standard
22 nC
21ns/93ns
400V, 15A, 10Ohm, 15V
96 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
63-7000PBF
Infineon Technologies

IGBT 650V COPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GWA40MS120DF4AG
STMicroelectronics

IGBT TRENCH FS 1200V 80A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 536 W
  • Switching Energy: 1.5mJ (on), 3.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 147 nC
  • Td (on/off) @ 25°C: 35ns/140ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 465 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封装: -
Request a Quote
1200 V
80 A
120 A
2.3V @ 15V, 40A
536 W
1.5mJ (on), 3.3mJ (off)
Standard
147 nC
35ns/140ns
600V, 40A, 10Ohm, 15V
465 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IXGN200N170
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 280 A
  • Current - Collector Pulsed (Icm): 1050 A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
  • Power - Max: 1250 W
  • Switching Energy: 28mJ (on), 30mJ (off)
  • Input Type: Standard
  • Gate Charge: 540 nC
  • Td (on/off) @ 25°C: 37ns/320ns
  • Test Condition: 850V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 133 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: -
Request a Quote
1700 V
280 A
1050 A
2.6V @ 15V, 100A
1250 W
28mJ (on), 30mJ (off)
Standard
540 nC
37ns/320ns
850V, 100A, 1Ohm, 15V
133 ns
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
SIGC81T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 95ns/200ns
  • Test Condition: 300V, 100A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
100 A
300 A
2.5V @ 15V, 100A
-
-
Standard
-
95ns/200ns
300V, 100A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die