页 33 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  33/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGP4069-EPBF
Infineon Technologies

IGBT 600V 76A 268W TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 76A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 35A
  • Power - Max: 268W
  • Switching Energy: 390µJ (on), 632µJ (off)
  • Input Type: Standard
  • Gate Charge: 104nC
  • Td (on/off) @ 25°C: 46ns/105ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存6,944
600V
76A
105A
1.85V @ 15V, 35A
268W
390µJ (on), 632µJ (off)
Standard
104nC
46ns/105ns
400V, 35A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot IRG4BC20W-S
Infineon Technologies

IGBT 600V 13A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 60µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 26nC
  • Td (on/off) @ 25°C: 22ns/110ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存21,600
600V
13A
52A
2.6V @ 15V, 6.5A
60W
60µJ (on), 80µJ (off)
Standard
26nC
22ns/110ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXST30N60B2D1
IXYS

IGBT 600V 48A 250W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 30ns/130ns
  • Test Condition: 400V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存4,928
600V
48A
90A
2.5V @ 15V, 24A
250W
550µJ (off)
Standard
50nC
30ns/130ns
400V, 24A, 5 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
AIKW50N65DF5XKSA1
Infineon Technologies

IC DISCRETE 650V TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,544
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot IRG4BC20W-SPBF
Infineon Technologies

IGBT 600V 13A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 60µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 26nC
  • Td (on/off) @ 25°C: 22ns/110ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存103,116
600V
13A
52A
2.6V @ 15V, 6.5A
60W
60µJ (on), 80µJ (off)
Standard
26nC
22ns/110ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRGR2B60KDTRRPBF
Infineon Technologies

IGBT 600V 6.3A 35W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6.3A
  • Current - Collector Pulsed (Icm): 8A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
  • Power - Max: 35W
  • Switching Energy: 74µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 11ns/150ns
  • Test Condition: 400V, 2A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,784
600V
6.3A
8A
2.25V @ 15V, 2A
35W
74µJ (on), 39µJ (off)
Standard
12nC
11ns/150ns
400V, 2A, 100 Ohm, 15V
68ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
APT13GP120BG
Microsemi Corporation

IGBT 1200V 41A 250W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 165µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 9ns/28ns
  • Test Condition: 600V, 13A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存6,944
1200V
41A
50A
3.9V @ 15V, 13A
250W
115µJ (on), 165µJ (off)
Standard
55nC
9ns/28ns
600V, 13A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot APT30GN60BDQ2G
Microsemi Corporation

IGBT 600V 63A 203W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 63A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 203W
  • Switching Energy: 525µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 12ns/155ns
  • Test Condition: 400V, 30A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封装: TO-247-3
库存19,020
600V
63A
90A
1.9V @ 15V, 30A
203W
525µJ (on), 700µJ (off)
Standard
165nC
12ns/155ns
400V, 30A, 4.3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXGP2N100
IXYS

IGBT 1000V 4A 25W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 4A
  • Current - Collector Pulsed (Icm): 8A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 2A
  • Power - Max: 25W
  • Switching Energy: 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 7.8nC
  • Td (on/off) @ 25°C: 15ns/300ns
  • Test Condition: 800V, 2A, 150 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存2,320
1000V
4A
8A
2.7V @ 15V, 2A
25W
560µJ (off)
Standard
7.8nC
15ns/300ns
800V, 2A, 150 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTB35N65FL2WG
ON Semiconductor

IGBT 650V 70A 300W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Power - Max: 300W
  • Switching Energy: 840µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 125nC
  • Td (on/off) @ 25°C: 72ns/132ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存5,040
650V
70A
120A
2V @ 15V, 35A
300W
840µJ (on), 280µJ (off)
Standard
125nC
72ns/132ns
400V, 35A, 10 Ohm, 15V
68ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IXYH50N65C3
IXYS

IGBT 650V 130A 600W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 130A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
  • Power - Max: 600W
  • Switching Energy: 1.3mJ (on), 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 22ns/80ns
  • Test Condition: 400V, 36A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封装: TO-247-3
库存2,100
650V
130A
250A
2.1V @ 15V, 36A
600W
1.3mJ (on), 370µJ (off)
Standard
80nC
22ns/80ns
400V, 36A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
hot FGPF15N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 30A 42W TO-220F

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
  • Power - Max: 42W
  • Switching Energy: 370µJ (on), 67µJ (off)
  • Input Type: Standard
  • Gate Charge: 43nC
  • Td (on/off) @ 25°C: 9.3ns/54.8ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 82.4ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3
封装: TO-220-3 Full Pack
库存114,864
600V
30A
45A
2.7V @ 15V, 15A
42W
370µJ (on), 67µJ (off)
Standard
43nC
9.3ns/54.8ns
400V, 15A, 10 Ohm, 15V
82.4ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-3
RJH60F5DPK-00#T0
Renesas Electronics America

IGBT 600V 80A 260.4W TO-3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 260.4W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 53ns/105ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存5,136
600V
80A
-
1.8V @ 15V, 40A
260.4W
-
Standard
-
53ns/105ns
400V, 30A, 5 Ohm, 15V
140ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IGP30N65H5XKSA1
Infineon Technologies

IGBT 650V TO220-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 188W
  • Switching Energy: 280µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 19ns/177ns
  • Test Condition: 400V, 15A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
封装: TO-220-3
库存9,264
650V
55A
90A
2.1V @ 15V, 30A
188W
280µJ (on), 100µJ (off)
Standard
70nC
19ns/177ns
400V, 15A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
STGP20V60DF
STMicroelectronics

IGBT 600V 40A 167W TO220AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: TO-220-3
库存16,344
600V
40A
80A
2.2V @ 15V, 20A
167W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
40ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
hot STGP10NB60SD
STMicroelectronics

IGBT 600V 29A 80W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 29A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
  • Power - Max: 80W
  • Switching Energy: 600µJ (on), 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 700ns/1.2µs
  • Test Condition: 480V, 10A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存7,376
600V
29A
80A
1.75V @ 15V, 10A
80W
600µJ (on), 5mJ (off)
Standard
33nC
700ns/1.2µs
480V, 10A, 1 kOhm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IRGIB10B60KD1P
Infineon Technologies

IGBT 600V 16A 44W TO220FP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 44W
  • Switching Energy: 156µJ (on), 165µJ (off)
  • Input Type: Standard
  • Gate Charge: 41nC
  • Td (on/off) @ 25°C: 25ns/180ns
  • Test Condition: 400V, 10A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 79ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
封装: TO-220-3 Full Pack
库存134,820
600V
16A
32A
2.1V @ 15V, 10A
44W
156µJ (on), 165µJ (off)
Standard
41nC
25ns/180ns
400V, 10A, 50 Ohm, 15V
79ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
FGP20N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 40A 165W TO220

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 165W
  • Switching Energy: 380µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 13ns/87ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封装: TO-220-3
库存12,348
600V
40A
60A
2.4V @ 15V, 20A
165W
380µJ (on), 260µJ (off)
Standard
63nC
13ns/87ns
400V, 20A, 10 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
STGB19NC60WT4
STMicroelectronics

IGBT 600V 40A 130W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 130W
  • Switching Energy: 81µJ (on), 125µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 25ns/90ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存18,600
600V
40A
-
2.5V @ 15V, 12A
130W
81µJ (on), 125µJ (off)
Standard
53nC
25ns/90ns
390V, 12A, 10 Ohm, 15V
-
-65°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot STGW30NC60WD
STMicroelectronics

IGBT 600V 60A 200W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 305µJ (on), 181µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 29.5ns/118ns
  • Test Condition: 390V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存34,980
600V
60A
150A
2.5V @ 15V, 20A
200W
305µJ (on), 181µJ (off)
Standard
102nC
29.5ns/118ns
390V, 20A, 10 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SFGH15T120SMD-F155
onsemi

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HGT1S7N60B3
Harris Corporation

14A, 600V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 14 A
  • Current - Collector Pulsed (Icm): 56 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
  • Power - Max: 60 W
  • Switching Energy: 160µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 30 nC
  • Td (on/off) @ 25°C: 26ns/130ns
  • Test Condition: 480V, 7A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262 (I2PAK)
封装: -
Request a Quote
600 V
14 A
56 A
2.1V @ 15V, 7A
60 W
160µJ (on), 120µJ (off)
Standard
30 nC
26ns/130ns
480V, 7A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262 (I2PAK)
IXGT6N170-TRL
IXYS

IGBT 1700V 12A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 12 A
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A
  • Power - Max: 75 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 20 nC
  • Td (on/off) @ 25°C: 40ns/250ns
  • Test Condition: 1360V, 6A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 36 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: -
Request a Quote
1700 V
12 A
24 A
4V @ 15V, 6A
75 W
-
Standard
20 nC
40ns/250ns
1360V, 6A, 33Ohm, 15V
36 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
FGD3040G2-F085-1
onsemi

IGBT 400V 41A TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 6.5A, 1kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
封装: -
Request a Quote
400 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
-/4.8µs
300V, 6.5A, 1kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
IKZA40N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
  • Power - Max: 210 W
  • Switching Energy: 0.37mJ (on), 0.36mJ (off)
  • Input Type: Standard
  • Gate Charge: 81 nC
  • Td (on/off) @ 25°C: 13ns/134ns
  • Test Condition: 400V, 40A, 12.5Ohm, 15V
  • Reverse Recovery Time (trr): 49.6 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
封装: -
库存720
650 V
80 A
160 A
1.65V @ 15V, 40A
210 W
0.37mJ (on), 0.36mJ (off)
Standard
81 nC
13ns/134ns
400V, 40A, 12.5Ohm, 15V
49.6 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
STGB30H65DFB2
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 30

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 167 W
  • Switching Energy: 270µJ (on), 310µJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 18.4ns/71ns
  • Test Condition: 400V, 30A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): 115 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
  • Supplier Device Package: D2PAK-3
封装: -
库存3
650 V
50 A
90 A
2.1V @ 15V, 30A
167 W
270µJ (on), 310µJ (off)
Standard
90 nC
18.4ns/71ns
400V, 30A, 6.8Ohm, 15V
115 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
D2PAK-3
IKZA100N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 140A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
  • Power - Max: 429 W
  • Switching Energy: 1.24mJ (on), 1.22mJ (off)
  • Input Type: Standard
  • Gate Charge: 207 nC
  • Td (on/off) @ 25°C: 32ns/240ns
  • Test Condition: 400V, 100A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 62 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
封装: -
库存612
650 V
140 A
400 A
1.65V @ 15V, 100A
429 W
1.24mJ (on), 1.22mJ (off)
Standard
207 nC
32ns/240ns
400V, 100A, 10Ohm, 15V
62 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
IGD15N65T6ARMA1
Infineon Technologies

IGBT TRENCH FS 650V 30A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 57.5 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
  • Power - Max: 100 W
  • Switching Energy: 230µJ (on), 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 37 nC
  • Td (on/off) @ 25°C: 30ns/117ns
  • Test Condition: 400V, 11.5A, 47Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: -
库存1,944
650 V
30 A
57.5 A
1.9V @ 15V, 11.5A
100 W
230µJ (on), 110µJ (off)
Standard
37 nC
30ns/117ns
400V, 11.5A, 47Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
AFGB40T65RQDN
onsemi

IGBT FIELD STOP 650V 68A TO263

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 68 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 40A
  • Power - Max: 339.37 W
  • Switching Energy: 470µJ (on), 420µJ (off)
  • Input Type: Standard
  • Gate Charge: 51 nC
  • Td (on/off) @ 25°C: 21ns/77ns
  • Test Condition: 400V, 20A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 52 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封装: -
库存1,869
650 V
68 A
160 A
1.82V @ 15V, 40A
339.37 W
470µJ (on), 420µJ (off)
Standard
51 nC
21ns/77ns
400V, 20A, 3Ohm, 15V
52 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IXGA48N60A3-TRL
IXYS

IXGA48N60A3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
  • Power - Max: 300 W
  • Switching Energy: 950µJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 25ns/334ns
  • Test Condition: 480V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 30 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封装: -
库存11,865
600 V
120 A
300 A
1.35V @ 15V, 32A
300 W
950µJ (on), 2.9mJ (off)
Standard
110 nC
25ns/334ns
480V, 32A, 5Ohm, 15V
30 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)