页 119 - 晶体管 - FET，MOSFET - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 射频

记录 3,855
页  119/129
图片
零件编号
制造商
描述
封装
库存
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA192401FV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 240W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 16dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
封装: 2-Flatpack, Fin Leads, Flanged
库存3,040
1.96GHz
16dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
MAGX-000912-500L0S
M/A-Com Technology Solutions

TRANSISTOR GAN 960-1215MHZ 500W

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.22GHz
  • Gain: 19.8dB
  • Voltage - Test: 50V
  • Current Rating: 27.3A
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 500W
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,888
960MHz ~ 1.22GHz
19.8dB
50V
27.3A
-
400mA
500W
-
-
-
BLF8G22L-160BV,118
NXP

TRANSISTOR CDFM6

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: SOT-1120B
  • Supplier Device Package: CDFM6
封装: SOT-1120B
库存5,632
-
-
-
-
-
-
-
-
SOT-1120B
CDFM6
MRF8S19260HSR5
NXP

FET RF 2CH 65V 1.99GHZ NI1230S-8

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.99GHz
  • Gain: 18.2dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 74W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1110B
  • Supplier Device Package: NI1230S-8
封装: SOT-1110B
库存5,056
1.99GHz
18.2dB
30V
-
-
1.6A
74W
65V
SOT-1110B
NI1230S-8
MRF8S9100HR5
NXP

FET RF 70V 920MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 920MHz
  • Gain: 19.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 72W
  • Voltage - Rated: 70V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
封装: NI-780
库存4,928
920MHz
19.3dB
28V
-
-
500mA
72W
70V
NI-780
NI-780
MRF6S19200HSR5
NXP

FET RF 66V 1.99GHZ NI780S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 17.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 56W
  • Voltage - Rated: 66V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封装: NI-780S
库存3,872
1.93GHz ~ 1.99GHz
17.9dB
28V
-
-
1.6A
56W
66V
NI-780S
NI-780S
hot MRF7S21110HSR3
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 33W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封装: NI-780S
库存9,420
2.17GHz
17.3dB
28V
-
-
1.1A
33W
65V
NI-780S
NI-780S
MRF6S18140HSR5
NXP

FET RF 68V 1.88GHZ NI880S

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 29W
  • Voltage - Rated: 68V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
封装: NI-880S
库存2,896
1.88GHz
16dB
28V
-
-
1.2A
29W
68V
NI-880S
NI-880S
PTAC210802FCV1R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,888
-
-
-
-
-
-
-
-
-
-
A2T18H450W19SR6
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 16.5dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 89W
  • Voltage - Rated: 30V
  • Package / Case: NI-1230S-8 Variant, Flat Leads
  • Supplier Device Package: NI-1230S-8
封装: NI-1230S-8 Variant, Flat Leads
库存5,648
1.805GHz ~ 1.88GHz
16.5dB
-
-
-
-
89W
30V
NI-1230S-8 Variant, Flat Leads
NI-1230S-8
hot MRF8S9260HSR3
NXP

FET RF 70V 960MHZ NI-880HS

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.7A
  • Power - Output: 75W
  • Voltage - Rated: 70V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
封装: NI-880S
库存35,520
960MHz
18.6dB
28V
-
-
1.7A
75W
70V
NI-880S
NI-880S
BLF7G24LS-160P,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封装: SOT539B
库存5,120
2.3GHz ~ 2.4GHz
18.5dB
28V
-
-
1.2A
30W
65V
SOT539B
SOT539B
BLP10H603Z
Ampleon USA Inc.

RF FET LDMOS 104V 22DB 12VDFN

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 22.8dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 15mA
  • Power - Output: 2.5W
  • Voltage - Rated: 104V
  • Package / Case: 12-VDFN Exposed Pad
  • Supplier Device Package: 12-HVSON (5x6)
封装: 12-VDFN Exposed Pad
库存5,328
860MHz
22.8dB
50V
-
-
15mA
2.5W
104V
12-VDFN Exposed Pad
12-HVSON (5x6)
BF1107,235
NXP

MOSFET N-CH 3V 10MA SOT23

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 10mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 3V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封装: TO-236-3, SC-59, SOT-23-3
库存2,496
-
-
-
10mA
-
-
-
3V
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BLF188XRSU
Ampleon USA Inc.

RF FET LDMOS 135V 24.4DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 108MHz
  • Gain: 24.4dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40mA
  • Power - Output: 1400W
  • Voltage - Rated: 135V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封装: SOT539B
库存3,312
108MHz
24.4dB
50V
-
-
40mA
1400W
135V
SOT539B
SOT539B
BLA6H0912LS-1000U
Ampleon USA Inc.

RF FET LDMOS 100V 15.5DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.03GHz
  • Gain: 15.5dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 1000W
  • Voltage - Rated: 100V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封装: SOT539B
库存5,408
1.03GHz
15.5dB
50V
-
-
200mA
1000W
100V
SOT539B
SOT539B
BLF888DSU
Ampleon USA Inc.

RF FET LDMOS 104V 21DB SOT539B

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 250W
  • Voltage - Rated: 104V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封装: SOT539B
库存5,472
860MHz
21dB
50V
-
-
1.3A
250W
104V
SOT539B
SOT539B
CGH09120F
Cree/Wolfspeed

RF MOSFET HEMT 28V 440095

  • Transistor Type: HEMT
  • Frequency: 2.5GHz
  • Gain: 21.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 120W
  • Voltage - Rated: 84V
  • Package / Case: 440095
  • Supplier Device Package: 440095
封装: 440095
库存6,368
2.5GHz
21.5dB
28V
-
-
1.2A
120W
84V
440095
440095
BLF9G20LS-160VJ
Ampleon USA Inc.

RF FET LDMOS 65V 19.8DB SOT1120B

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 19.8dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 35.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1120B
  • Supplier Device Package: CDFM6
封装: SOT-1120B
库存4,992
1.81GHz ~ 1.88GHz
19.8dB
28V
-
-
800mA
35.5W
65V
SOT-1120B
CDFM6
BLL8H0514LS-130U
Ampleon USA Inc.

RF FET LDMOS 100V 17DB SOT1135B

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 130W
  • Voltage - Rated: 100V
  • Package / Case: SOT-1135B
  • Supplier Device Package: CDFM2
封装: SOT-1135B
库存4,720
1.2GHz ~ 1.4GHz
17dB
50V
-
-
50mA
130W
100V
SOT-1135B
CDFM2
BF 2040 E6814
Infineon Technologies

MOSFET N-CH 8V 40MA SOT-143

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 23dB
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 1.6dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
封装: TO-253-4, TO-253AA
库存152,862
800MHz
23dB
5V
40mA
1.6dB
15mA
-
8V
TO-253-4, TO-253AA
PG-SOT143-4
hot ATF-34143-TR1G
Broadcom Limited

FET RF 5.5V 2GHZ SOT-343

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 17.5dB
  • Voltage - Test: 4V
  • Current Rating: 145mA
  • Noise Figure: 0.5dB
  • Current - Test: 60mA
  • Power - Output: 20dBm
  • Voltage - Rated: 5.5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封装: SC-82A, SOT-343
库存2,644,248
2GHz
17.5dB
4V
145mA
0.5dB
60mA
20dBm
5.5V
SC-82A, SOT-343
SOT-343
DC35GN-15-Q4
Microchip Technology

RF MOSFET HEMT 50V 24QFN

  • Transistor Type: HEMT
  • Frequency: -
  • Gain: 18.6dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40 mA
  • Power - Output: 19W
  • Voltage - Rated: 125 V
  • Package / Case: 24-TFQFN Exposed Pad
  • Supplier Device Package: 24-QFN (4x4)
封装: -
Request a Quote
-
18.6dB
50 V
-
-
40 mA
19W
125 V
24-TFQFN Exposed Pad
24-QFN (4x4)
CGH27015P
MACOM Technology Solutions

RF MOSFET HEMT 28V 440196

  • Transistor Type: HEMT
  • Frequency: 2.3GHz ~ 2.9GHz
  • Gain: 15dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 15W
  • Voltage - Rated: 84 V
  • Package / Case: 440196
  • Supplier Device Package: 440196
封装: -
Request a Quote
2.3GHz ~ 2.9GHz
15dB
28 V
-
-
100 mA
15W
84 V
440196
440196
RFM04U6P-TE12L-F
Toshiba Semiconductor and Storage

RF MOSFET 6V PW-MINI

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 470MHz
  • Gain: 13.3dB
  • Voltage - Test: 6 V
  • Current Rating: 2A
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 4.3W
  • Voltage - Rated: 16 V
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
封装: -
Request a Quote
470MHz
13.3dB
6 V
2A
-
500 mA
4.3W
16 V
TO-243AA
PW-MINI
DU2805S
MACOM Technology Solutions

RF MOSFET 28V

  • Transistor Type: -
  • Frequency: 2MHz ~ 175MHz
  • Gain: 11dB
  • Voltage - Test: 28 V
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: 50 mA
  • Power - Output: 5W
  • Voltage - Rated: 65 V
  • Package / Case: 4L-FLG
  • Supplier Device Package: -
封装: -
Request a Quote
2MHz ~ 175MHz
11dB
28 V
1mA
-
50 mA
5W
65 V
4L-FLG
-
A3G26D055N-1805
NXP

RF MOSFET GAN 48V 6DFN

  • Transistor Type: GaN
  • Frequency: 100MHz ~ 2.69GHz
  • Gain: 13.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40 mA
  • Power - Output: 8W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
封装: -
库存9
100MHz ~ 2.69GHz
13.9dB
48 V
-
-
40 mA
8W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
BLC10G22XS-301AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V DFM6

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 15dB
  • Voltage - Test: 30 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.1 A
  • Power - Output: 300W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
封装: -
Request a Quote
2.11GHz ~ 2.17GHz
15dB
30 V
1.4µA
-
1.1 A
300W
65 V
SOT-1275-1
DFM6
MHT1803A
NXP

RF MOSFET TO247

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTFB201402FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.02GHz
  • Gain: 16dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 20W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封装: -
Request a Quote
2.02GHz
16dB
28 V
-
-
500 mA
20W
65 V
H-37248-4
H-37248-4