图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Frequency | Gain | Voltage - Test | Current Rating | Noise Figure | Current - Test | Power - Output | Voltage - Rated | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
IC FET RF LDMOS H-362620-2
|
封装: H-36260-2 |
库存4,400 |
|
960MHz | 19dB | 28V | - | - | 2.8A | 112W | 65V | H-36260-2 | H-36260-2 |
||
CEL |
FET RF 30V 900MHZ 3MINIMOLD
|
封装: TO-243AA |
库存3,072 |
|
900MHz | 23.5dB | 7.5V | 600mA | - | 40mA | 32.2dB | 30V | TO-243AA | 3-PowerMiniMold |
||
NXP |
FET RF 2CH 65V 1.88GHZ NI1230S8
|
封装: SOT-1110B |
库存2,112 |
|
1.88GHz | 16dB | 30V | - | - | 800mA | 72W | 65V | SOT-1110B | NI1230S-8 |
||
NXP |
MOSFET RF 20SOIC
|
封装: - |
库存5,696 |
|
- | - | - | - | - | - | - | - | - | - |
||
NXP |
FET RF 65V 3.5GHZ NI-780S
|
封装: NI-780S |
库存5,760 |
|
3.1GHz ~ 3.5GHz | 12dB | 32V | - | - | 150mA | 120W | 65V | NI-780S | NI-780S |
||
STMicroelectronics |
TRANS RF N-CH FET POWERSO-10RF
|
封装: PowerSO-10 Exposed Bottom Pad |
库存5,024 |
|
500MHz | 12dB | 7.5V | 4A | - | 50mA | 3W | 25V | PowerSO-10 Exposed Bottom Pad | PowerSO-10RF (Straight Lead) |
||
NXP |
FET RF 65V 1.99GHZ NI-780S
|
封装: NI-780S |
库存3,840 |
|
1.93GHz ~ 1.99GHz | 13dB | 26V | - | - | 850mA | 18W | 65V | NI-780S | NI-780S |
||
NXP |
FET RF 65V 1.99GHZ NI-880S
|
封装: NI-880S |
库存4,256 |
|
1.93GHz ~ 1.99GHz | 14dB | 28V | - | - | 1.4A | 32W | 65V | NI-880S | NI-880S |
||
NXP |
FET RF 65V 1.99GHZ TO-272-4
|
封装: TO-272BB |
库存16,764 |
|
1.99GHz | 14dB | 28V | - | - | 750mA | 12W | 65V | TO-272BB | TO-272 WB-4 |
||
Infineon Technologies |
IC AMP RF LDMOS
|
封装: H-37275-4 |
库存3,200 |
|
2.4GHz | 15dB | 28V | - | - | 850mA | 68W | 65V | H-37275-4 | H-37275-4 |
||
Infineon Technologies |
IC RF LDMOS FET H-36265-2
|
封装: H-36265-2 |
库存6,400 |
|
500MHz ~ 1.4GHz | 15.8dB | - | 10µA | - | - | 34W | 105V | H-36265-2 | H-36265-2 |
||
Ampleon USA Inc. |
BLA9G1011L-300G/SOT502/TRAY
|
封装: - |
库存6,096 |
|
- | - | - | - | - | - | - | - | - | - |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 18.3DB SOT1239B
|
封装: SOT-1239B |
库存6,736 |
|
2.11GHz ~ 2.17GHz | 18.3dB | 28V | - | - | 1.2A | 50.1W | 65V | SOT-1239B | SOT1239B |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 18DB SOT1120B
|
封装: SOT-1120B |
库存7,216 |
|
1.94GHz ~ 1.99GHz | 18dB | 32V | - | - | 1.3A | 60W | 65V | SOT-1120B | CDFM6 |
||
Ampleon USA Inc. |
BLC9G24XS-170AV/SOT1275/REELDP
|
封装: - |
库存4,848 |
|
- | - | - | - | - | - | - | - | - | - |
||
NXP |
FET RF 65V 960MHZ TO-272-4
|
封装: TO-272BB |
库存16,764 |
|
960MHz | 18.5dB | 26V | - | - | 600mA | 80W | 65V | TO-272BB | TO-272 WB-4 |
||
Broadcom Limited |
IC PHEMT LOW NOISE 2GHZ MINIPAK
|
封装: 0505 (1412 Metric) |
库存2,064 |
|
2GHz | 15dB | 4V | 305mA | 0.6dB | 60mA | 19dBm | 5.5V | 0505 (1412 Metric) | MiniPak 1412 |
||
Microwave Technology Inc. |
FET RF 5V 18GHZ PKG 73
|
封装: Nonstandard SMD |
库存4,928 |
|
500MHz ~ 18GHz | 6.5dB | 3V | 120mA | 1.8dB | 30mA | 24.5dBm | 5V | Nonstandard SMD | 73 |
||
NXP |
FET RF 2CH 133V 230MHZ TO-270 GW
|
封装: TO-270BB |
库存2,512 |
|
230MHz | 26.1dB | 50V | - | - | 100mA | 150W | 133V | TO-270BB | TO-270 WB-4 Gull |
||
STMicroelectronics |
FET RF 25V 870MHZ PWRSO-10RF
|
封装: PowerSO-10 Exposed Bottom Pad |
库存6,960 |
|
870MHz | 15dB | 7.5V | 5A | - | 150mA | 6W | 25V | PowerSO-10 Exposed Bottom Pad | 10-PowerSO |
||
IXYS |
RF MOSFET 2N-CHANNEL DE275
|
封装: 8-SMD, Flat Lead Exposed Pad |
库存6,384 |
|
100MHz | - | - | 1mA | - | - | 1180W | 1000V | 8-SMD, Flat Lead Exposed Pad | DE275 |
||
IXYS |
RF MOSFET N-CHANNEL DE375
|
封装: 6-SMD, Flat Lead Exposed Pad |
库存7,608 |
|
50MHz | - | - | 1mA | - | - | 940W | 1000V | 6-SMD, Flat Lead Exposed Pad | DE375 |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 20DB SOT502D
|
封装: SOT-502D |
库存5,744 |
|
1.03GHz ~ 1.09GHz | 20dB | 28V | 49A | - | 100mA | 200W | 65V | SOT-502D | LDMOST |
||
MACOM Technology Solutions |
RF MOSFET LDMOS 28V DSO20
|
封装: - |
库存1,095 |
|
1.8GHz ~ 2.1GHz | 30dB | 28 V | 10µA | - | 360 mA | 40W | 65 V | 20-SOIC (0.433", 11.00mm Width) Exposed Pad | PG-DSO-20-63 |
||
MACOM Technology Solutions |
RF MOSFET LDMOS 50V 6HB2SOF
|
封装: - |
Request a Quote |
|
920MHz ~ 960MHz | 19dB | 50 V | 10µA | - | 600 mA | 630W | 105 V | HB2SOF-6-1 | PG-HB2SOF-6-1 |
||
Sanyo |
RF MOSFET 10V 3CP
|
封装: - |
Request a Quote |
|
100MHz | 35dB | 10 V | 30mA | 2dB | - | - | 15 V | TO-236-3, SC-59, SOT-23-3 | 3-CP |
||
Ampleon USA Inc. |
RF MOSFET LDMOS 50V SOT502B
|
封装: - |
库存51 |
|
960MHz ~ 1.215GHz | 20dB | 50 V | 2.8µA | - | 100 mA | 700W | 106 V | SOT-502B | SOT502B |
||
MACOM Technology Solutions |
RF MOSFET LDMOS 48V 4HBSOF
|
封装: - |
Request a Quote |
|
869MHz ~ 960MHz | 22.5dB | 48 V | 10µA | - | 900 mA | 240W | 105 V | HBSOF-4-1 | PG-HBSOF-4-1 |
||
MACOM Technology Solutions |
RF MOSFET HEMT 48V H-37248C-4
|
封装: - |
Request a Quote |
|
3.4GHz ~ 3.6GHz | 13.5dB | 48 V | - | - | 140 mA | 200W | 125 V | H-37248C-4 | H-37248C-4 |
||
Renesas Electronics Corporation |
RF MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - |