页 118 - 晶体管 - FET，MOSFET - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 射频

记录 3,855
页  118/129
图片
零件编号
制造商
描述
封装
库存
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA212401E V4
Infineon Technologies

FET RF 65V 2.14GHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.8dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 50W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
封装: 2-Flatpack, Fin Leads
库存5,488
2.14GHz
15.8dB
30V
10µA
-
1.6A
50W
65V
2-Flatpack, Fin Leads
H-36260-2
PTFA091201GL V1
Infineon Technologies

IC FET RF LDMOS 120W PG-63248-2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 110W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: PG-63248-2
封装: 2-Flatpack, Fin Leads
库存3,088
960MHz
18.5dB
28V
10µA
-
750mA
110W
65V
2-Flatpack, Fin Leads
PG-63248-2
PTFA041501HL V1 R250
Infineon Technologies

IC FET RF LDMOS 150W PG-64248-2

  • Transistor Type: LDMOS
  • Frequency: 470MHz
  • Gain: 21dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: PG-64248-2
封装: 2-Flatpack, Fin Leads, Flanged
库存3,088
470MHz
21dB
28V
1µA
-
900mA
150W
65V
2-Flatpack, Fin Leads, Flanged
PG-64248-2
MRF21085LSR5
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 19W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封装: NI-780S
库存7,008
2.11GHz ~ 2.17GHz
13.6dB
28V
-
-
1A
19W
65V
NI-780S
NI-780S
MRF6S21100MR1
NXP

FET RF 68V 2.16GHZ TO270-4

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.16GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.05A
  • Power - Output: 23W
  • Voltage - Rated: 68V
  • Package / Case: TO-270-4
  • Supplier Device Package: TO-270 WB-4
封装: TO-270-4
库存3,264
2.11GHz ~ 2.16GHz
14.5dB
28V
-
-
1.05A
23W
68V
TO-270-4
TO-270 WB-4
MRF6S21050LR5
NXP

FET RF 68V 2.16GHZ NI-400

  • Transistor Type: LDMOS
  • Frequency: 2.16GHz
  • Gain: 16dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 11.5W
  • Voltage - Rated: 68V
  • Package / Case: NI-400
  • Supplier Device Package: NI-400
封装: NI-400
库存6,400
2.16GHz
16dB
28V
-
-
450mA
11.5W
68V
NI-400
NI-400
MRF6S19100HSR3
NXP

FET RF 68V 1.99GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 16.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 22W
  • Voltage - Rated: 68V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封装: NI-780S
库存3,648
1.99GHz
16.1dB
28V
-
-
900mA
22W
68V
NI-780S
NI-780S
hot MRF6S19100HR3
NXP

FET RF 68V 1.99GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 1.99GHz
  • Gain: 16.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 22W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
封装: NI-780
库存4,624
1.99GHz
16.1dB
28V
-
-
900mA
22W
68V
NI-780
NI-780
MRFG35010NR5
NXP

FET RF 15V 3.55GHZ

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 9W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
封装: PLD-1.5
库存6,640
3.55GHz
10dB
12V
-
-
180mA
9W
15V
PLD-1.5
PLD-1.5
hot J310
ON Semiconductor

JFET N-CH 25V 60MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: 16dB
  • Voltage - Test: 10V
  • Current Rating: 60mA
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存3,696
100MHz
16dB
10V
60mA
-
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BF1102,115
NXP

FET RF 7V 800MHZ 6TSSOP

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 2dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
封装: 6-TSSOP, SC-88, SOT-363
库存3,520
800MHz
-
5V
40mA
2dB
15mA
-
7V
6-TSSOP, SC-88, SOT-363
6-TSSOP
PTFB211501FV1R250XTMA1
Infineon Technologies

FET RF 65V 2.17GHZ H37248-2

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
封装: 2-Flatpack, Fin Leads, Flanged
库存5,424
2.17GHz
18dB
30V
-
-
1.2A
40W
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
PTFA080551EV4R0XTMA1
Infineon Technologies

RF MOSFET LDMOS 28V H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 869MHz ~ 960MHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-36265-2
封装: 2-Flatpack, Fin Leads, Flanged
库存4,064
869MHz ~ 960MHz
18.5dB
28V
10µA
-
450mA
55W
65V
2-Flatpack, Fin Leads, Flanged
H-36265-2
AFV141KHSR5
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.4GHz
  • Gain: 17.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 105V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
封装: NI-1230-4S
库存4,288
1.4GHz
17.7dB
50V
-
-
100mA
1000W
105V
NI-1230-4S
NI-1230-4S
MRF8P8300HSR6
NXP

FET RF 2CH 70V 820MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 820MHz
  • Gain: 20.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 96W
  • Voltage - Rated: 70V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
封装: NI-1230S
库存2,704
820MHz
20.9dB
28V
-
-
2A
96W
70V
NI-1230S
NI-1230S
BLF6G27L-50BN,112
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT1112A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 430mA
  • Power - Output: 3W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1112A
  • Supplier Device Package: CDFM6
封装: SOT-1112A
库存3,232
2.5GHz ~ 2.7GHz
16.5dB
28V
-
-
430mA
3W
65V
SOT-1112A
CDFM6
BLF6G38S-25,118
Ampleon USA Inc.

RF FET LDMOS 65V 15DB SOT608B

  • Transistor Type: LDMOS
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 8.2A
  • Noise Figure: -
  • Current - Test: 225mA
  • Power - Output: 4.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-608B
  • Supplier Device Package: CDFM2
封装: SOT-608B
库存4,992
3.4GHz ~ 3.6GHz
15dB
28V
8.2A
-
225mA
4.5W
65V
SOT-608B
CDFM2
BLP8G20S-80PY
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT12231

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.88GHz ~ 1.92GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1223-1
  • Supplier Device Package: 4-HSOPF
封装: SOT-1223-1
库存6,144
1.88GHz ~ 1.92GHz
17.5dB
28V
-
-
300mA
10W
65V
SOT-1223-1
4-HSOPF
hot ATF-551M4-TR1
Broadcom Limited

IC TRANS E-PHEMT GAAS MINIPAK

  • Transistor Type: pHEMT FET
  • Frequency: 2GHz
  • Gain: 17.5dB
  • Voltage - Test: 2.7V
  • Current Rating: 100mA
  • Noise Figure: 0.5dB
  • Current - Test: 10mA
  • Power - Output: 14.6dBm
  • Voltage - Rated: 5V
  • Package / Case: 0505 (1412 Metric)
  • Supplier Device Package: MiniPak 1412
封装: 0505 (1412 Metric)
库存1,305,216
2GHz
17.5dB
2.7V
100mA
0.5dB
10mA
14.6dBm
5V
0505 (1412 Metric)
MiniPak 1412
NPT1010B
M/A-Com Technology Solutions

HEMT N-CH 28V 100W DC-2000MHZ

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 2GHz
  • Gain: 19.7dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: -
  • Voltage - Rated: 100V
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,448
0Hz ~ 2GHz
19.7dB
28V
-
-
700mA
-
100V
-
-
MMRF1316NR1
NXP

FET RF 2CH 133V 230MHZ TO270

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 27dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 300W
  • Voltage - Rated: 133V
  • Package / Case: TO-270-4
  • Supplier Device Package: TO-270 WB-4
封装: TO-270-4
库存3,568
230MHz
27dB
50V
-
-
100mA
300W
133V
TO-270-4
TO-270 WB-4
PD55025TR-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 14.5dB
  • Voltage - Test: 12.5V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 25W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
封装: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
库存5,520
500MHz
14.5dB
12.5V
7A
-
200mA
25W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
CGH60008D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 8W
  • Voltage - Rated: 84V
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存6,012
6GHz
15dB
28V
-
-
100mA
8W
84V
Die
Die
BLC10G19XS-551AVY
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-5

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 2GHz
  • Gain: 15dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 370 mA
  • Power - Output: 550W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-5
  • Supplier Device Package: SOT1258-5
封装: -
Request a Quote
1.93GHz ~ 2GHz
15dB
30 V
2.8µA
-
370 mA
550W
65 V
SOT-1258-5
SOT1258-5
PXAC201602FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.02GHz
  • Gain: 17.7dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360 mA
  • Power - Output: 22.5W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封装: -
Request a Quote
2.02GHz
17.7dB
28 V
-
-
360 mA
22.5W
65 V
H-37248-4
H-37248-4
BLC10G19LS-250WT
Ampleon USA Inc.

RF MOSFET LDMOS 28V SOT1271-2

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 19.3dB
  • Voltage - Test: 28 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 1.4 A
  • Power - Output: 250W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1271-2
  • Supplier Device Package: SOT1271-2
封装: -
Request a Quote
1.93GHz ~ 1.99GHz
19.3dB
28 V
1.4µA
-
1.4 A
250W
65 V
SOT-1271-2
SOT1271-2
TAV1-541
Mini-Circuits

RF MOSFET E-PHEMT 3V TE2769

  • Transistor Type: E-pHEMT
  • Frequency: 45MHz ~ 6GHz
  • Gain: 18.6dB
  • Voltage - Test: 3 V
  • Current Rating: -
  • Noise Figure: 1.4dB
  • Current - Test: 60 mA
  • Power - Output: 18.6dBm
  • Voltage - Rated: 5 V
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: TE2769
封装: -
库存2,790
45MHz ~ 6GHz
18.6dB
3 V
-
1.4dB
60 mA
18.6dBm
5 V
4-SMD, No Lead
TE2769
ST24180
STMicroelectronics

RF MOSFET LDMOS B2

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.5GHz
  • Gain: 15.3dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 180W
  • Voltage - Rated: 65 V
  • Package / Case: B2
  • Supplier Device Package: B2
封装: -
Request a Quote
2.3GHz ~ 2.5GHz
15.3dB
-
1µA
-
-
180W
65 V
B2
B2
0912GN-650V
Microchip Technology

RF MOSFET HEMT 50V 55-KR

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 18dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 650W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
封装: -
Request a Quote
960MHz ~ 1.215GHz
18dB
50 V
-
-
100 mA
650W
150 V
55-KR
55-KR
BLP15M9S30GXY
Ampleon USA Inc.

RF MOSFET LDMOS 32V TO270

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 19.3dB
  • Voltage - Test: 32 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 30W
  • Voltage - Rated: 65 V
  • Package / Case: TO-270BA
  • Supplier Device Package: TO-270-2G-1
封装: -
Request a Quote
2GHz
19.3dB
32 V
1.4µA
-
200 mA
30W
65 V
TO-270BA
TO-270-2G-1