页 92 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品 | 黑森尔电子
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晶体管 - FET，MOSFET - 阵列

记录 3,259
页  92/109
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF5850TRPBF
Infineon Technologies

MOSFET 2P-CH 20V 2.2A 6-TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
  • Power - Max: 960mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封装: SOT-23-6 Thin, TSOT-23-6
库存72,756
Logic Level Gate
20V
2.2A
135 mOhm @ 2.2A, 4.5V
1.2V @ 250µA
5.4nC @ 4.5V
320pF @ 15V
960mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
IRF7750GTRPBF
Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存7,776
Logic Level Gate
20V
4.7A
30 mOhm @ 4.7A, 4.5V
1.2V @ 250µA
39nC @ 5V
1700pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot IRF7756
Infineon Technologies

MOSFET 2P-CH 12V 4.3A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存82,800
Logic Level Gate
12V
4.3A
40 mOhm @ 4.3A, 4.5V
900mV @ 250µA
18nC @ 4.5V
1400pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
EFC6618R-A-TF
ON Semiconductor

MOSFET 2N-CH EFCP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,344
-
-
-
-
-
-
-
-
-
-
-
-
AO9926BL_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存7,952
Standard
20V
7.6A
23 mOhm @ 7.6A, 10V
1.1V @ 250µA
12.5nC @ 10V
630pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AO7600_001
Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH SC70-6

  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 900mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
封装: 6-TSSOP, SC-88, SOT-363
库存3,904
Standard
20V
900mA
300 mOhm @ 900mA, 4.5V
900mV @ 250µA
1.9nC @ 4.5V
120pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
LP1030DK1-G
Microchip Technology

MOSFET 2P-CH 300V SOT23-5

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 180 Ohm @ 20mA, 7V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10.8pF @ 25V
  • Power - Max: -
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-23-5
封装: SC-74A, SOT-753
库存4,128
Standard
300V
-
180 Ohm @ 20mA, 7V
2.4V @ 1mA
-
10.8pF @ 25V
-
-25°C ~ 125°C (TJ)
Surface Mount
SC-74A, SOT-753
SOT-23-5
APTM120VDA57T3G
Microsemi Corporation

MOSFET 2N-CH 1200V 17A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封装: SP3
库存5,264
Standard
1200V (1.2kV)
17A
684 mOhm @ 8.5A, 10V
5V @ 2.5mA
187nC @ 10V
5155pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
AON6910A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9.1A/16A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A, 16A
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V
  • Power - Max: 1.9W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
封装: 8-PowerVDFN
库存6,912
Logic Level Gate
30V
9.1A, 16A
14 mOhm @ 9.1A, 10V
2.4V @ 250µA
9nC @ 10V
670pF @ 15V
1.9W, 2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
hot SI6969DQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存72,000
Logic Level Gate
12V
-
34 mOhm @ 4.6A, 4.5V
450mV @ 250µA (Min)
40nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SI4908DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 40V 5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
  • Power - Max: 2.75W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,536
Standard
40V
5A
60 mOhm @ 4.1A, 10V
2.2V @ 250µA
12nC @ 10V
355pF @ 20V
2.75W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
GWM160-0055X1-SMD
IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL?
封装: 17-SMD, Gull Wing
库存2,528
Standard
55V
150A
3.3 mOhm @ 100A, 10V
4.5V @ 1mA
105nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Gull Wing
ISOPLUS-DIL?
hot SI1551DL-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V SC70-6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 290mA, 410mA
  • Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
封装: 6-TSSOP, SC-88, SOT-363
库存2,454,996
Logic Level Gate
20V
290mA, 410mA
1.9 Ohm @ 290mA, 4.5V
1.5V @ 250µA
1.5nC @ 4.5V
-
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
IPG20N06S4L11ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 28µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
  • Power - Max: 65W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
封装: 8-PowerVDFN
库存7,744
Logic Level Gate
60V
20A
11.2 mOhm @ 17A, 10V
2.2V @ 28µA
53nC @ 10V
4020pF @ 25V
65W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
ALD1110ESAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10V 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1.01V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 600mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,640
Standard
10V
-
500 Ohm @ 5V
1.01V @ 1µA
-
2.5pF @ 5V
600mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI4966DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存4,976
Logic Level Gate
20V
-
25 mOhm @ 7.1A, 4.5V
1.5V @ 250µA
50nC @ 4.5V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SH8M41GZETB
Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,888
Logic Level Gate, 4V Drive
80V
3.4A, 2.6A
130 mOhm @ 3.4A, 10V
2.5V @ 1mA
9.2nC @ 5V
600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN2028UFU-13
Diodes Incorporated

MOSFET 2N-CH 20V 7.9A UDFN2020-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
封装: 6-UFDFN Exposed Pad
库存6,640
Standard
20V
7.5A
20.2 mOhm @ 4.5A, 4.5V
1V @ 250µA
18.4nC @ 8V
887pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
hot IRF7343PBF
Infineon Technologies

MOSFET N/P-CH 55V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存9,528
Standard
55V
4.7A, 3.4A
50 mOhm @ 4.7A, 10V
1V @ 250µA
36nC @ 10V
740pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF9910TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 10A/12A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A, 12A
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存543,600
Logic Level Gate
20V
10A, 12A
9.3 mOhm @ 12A, 10V
2.55V @ 250µA
11nC @ 4.5V
900pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FDMD86100
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V

  • FET Type: 2 N-Channel (Dual) Common Source
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
  • Power - Max: 2.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power 5x6
封装: 8-PowerWDFN
库存6,240
Standard
100V
10A
10.5 mOhm @ 10A, 10V
4V @ 250µA
30nC @ 10V
2060pF @ 50V
2.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power 5x6
hot EM6K6T2R
Rohm Semiconductor

MOSFET 2N-CH 20V 0.3A EMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 300mA
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
封装: SOT-563, SOT-666
库存2,415,960
Logic Level Gate
20V
300mA
1 Ohm @ 300mA, 4V
1V @ 1mA
-
25pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
hot AON5802B
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 7.2A 6DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: 6-DFN-EP (2x5)
封装: 6-SMD, Flat Lead Exposed Pad
库存58,260
Logic Level Gate
30V
7.2A
19 mOhm @ 7A, 4.5V
1.5V @ 250µA
24nC @ 10V
1150pF @ 15V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, Flat Lead Exposed Pad
6-DFN-EP (2x5)
APTM50HM65FT3G
Microsemi Corporation

MOSFET 4N-CH 500V 51A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 51A
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封装: SP3
库存6,720
Standard
500V
51A
78 mOhm @ 25.5A, 10V
5V @ 2.5mA
140nC @ 10V
7000pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
SSM6P47NU,LF(T
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 2-2Y1A

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
封装: 6-WDFN Exposed Pad
库存26,646
Logic Level Gate
20V
4A
95 mOhm @ 1.5A, 4.5V
1V @ 1mA
4.6nC @ 4.5V
290pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-UDFN (2x2)
BUK9K25-40EX
Nexperia USA Inc.

MOSFET 2N-CH 40V 18.2A 56LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 18.2A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
  • Power - Max: 32W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
封装: SOT-1205, 8-LFPAK56
库存22,866
Logic Level Gate
40V
18.2A
24 mOhm @ 5A, 10V
2.1V @ 1mA
6.3nC @ 5V
701pF @ 25V
32W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot DMC2990UDJ-7
Diodes Incorporated

MOSFET N/P-CH 20V SOT963

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 450mA, 310mA
  • Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
封装: SOT-963
库存193,056
Logic Level Gate
20V
450mA, 310mA
990 mOhm @ 100mA, 4.5V
1V @ 250µA
0.5nC @ 4.5V
27.6pF @ 15V
350mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
SSM6N56FE,LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
封装: SOT-563, SOT-666
库存34,896
Logic Level Gate, 1.5V Drive
20V
800mA
235 mOhm @ 800mA, 4.5V
1V @ 1mA
1nC @ 4.5V
55pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
PMDXB600UNE
Nexperia USA Inc.

MOSFET 2N-CH 20V 0.6A 6DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
  • Power - Max: 265mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: 6-DFN (1.1x1)
封装: 6-XFDFN Exposed Pad
库存231,534
Logic Level Gate
20V
600mA
620 mOhm @ 600mA, 4.5V
950mV @ 250µA
0.7nC @ 4.5V
21.3pF @ 10V
265mW
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
6-DFN (1.1x1)
hot BSS84DW-7-F
Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 130mA
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存6,340,884
Logic Level Gate
50V
130mA
10 Ohm @ 100mA, 5V
2V @ 1mA
-
45pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363