页 94 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品 | 黑森尔电子
联系我们
SalesDept@heisener.com +86-755-83210559 ext. 807
登入/注册
BOM
购物车 0

晶体管 - FET，MOSFET - 阵列

记录 3,259
页  94/109
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MVDF1N05ER2G
ON Semiconductor

MOSFET 2N-CH 50V 2A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存4,480
Logic Level Gate
50V
2A
300 mOhm @ 1.5A, 10V
3V @ 250µA
12.5nC @ 10V
330pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI7983DP-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 7.7A PPAK SO-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封装: PowerPAK? SO-8 Dual
库存2,416
Logic Level Gate
20V
7.7A
17 mOhm @ 12A, 4.5V
1V @ 600µA
74nC @ 4.5V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI3850ADV-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 1.4A 6-TSOP

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.08W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封装: SOT-23-6 Thin, TSOT-23-6
库存252,300
Logic Level Gate
20V
1.4A, 960mA
300 mOhm @ 500mA, 4.5V
1.5V @ 250µA
1.4nC @ 4.5V
-
1.08W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot SSM6P15FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
封装: SOT-563, SOT-666
库存1,056,000
Logic Level Gate
30V
100mA
12 Ohm @ 10mA, 4V
1.7V @ 100µA
-
9.1pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
NTLJD3183CZTBG
ON Semiconductor

MOSFET N/P-CH 20V 6WDFN

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.2A
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
  • Power - Max: 710mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
封装: 6-WDFN Exposed Pad
库存4,544
Logic Level Gate
20V
2.6A, 2.2A
68 mOhm @ 2A, 4.5V
1V @ 250µA
7nC @ 4.5V
355pF @ 10V
710mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
NTUD3129PT5G
ON Semiconductor

MOSFET 2P-CH 20V 0.14A SOT-963

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 140mA
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 15V
  • Power - Max: 125mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
封装: SOT-963
库存4,928
Logic Level Gate
20V
140mA
5 Ohm @ 100mA, 4.5V
1V @ 250µA
-
12pF @ 15V
125mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
hot FDG6313N
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.5A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封装: 6-TSSOP, SC-88, SOT-363
库存50,400
Logic Level Gate
25V
500mA
450 mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3nC @ 4.5V
50pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot SP8M7TB
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/7A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 7A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,420
Logic Level Gate
30V
5A, 7A
51 mOhm @ 5A, 10V
2.5V @ 1mA
5.5nC @ 5V
230pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
IPG16N10S461ATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16A
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 9µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Power - Max: 29W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
封装: 8-PowerVDFN
库存2,464
Standard
100V
16A
61 mOhm @ 16A, 10V
3.5V @ 9µA
7nC @ 10V
490pF @ 25V
29W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
FMM60-02TF
IXYS

MOSFET 2N-CH 200V 33A I4-PAC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 33A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
  • Power - Max: 125W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5
库存5,040
Standard
200V
33A
40 mOhm @ 30A, 10V
4.5V @ 250µA
90nC @ 10V
3700pF @ 25V
125W
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
IRF3546MTRPBF
Infineon Technologies

MOSFET 4N-CH 25V 16A/20A 41PQFN

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 13V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 41-PowerVFQFN
  • Supplier Device Package: 41-PQFN (6x8)
封装: 41-PowerVFQFN
库存3,456
Logic Level Gate
25V
16A (Tc), 20A (Tc)
3.9 mOhm @ 27A, 10V
2.1V @ 35µA
15nC @ 4.5V
1310pF @ 13V
-
-40°C ~ 150°C (TJ)
Surface Mount
41-PowerVFQFN
41-PQFN (6x8)
ALD110808SCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
  • Vgs(th) (Max) @ Id: 820mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
封装: 16-SOIC (0.154", 3.90mm Width)
库存6,704
Standard
10.6V
12mA, 3mA
500 Ohm @ 4.8V
820mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
SI7236DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 60A PWRPAK 8-SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
  • Power - Max: 46W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封装: PowerPAK? SO-8 Dual
库存4,240
Standard
20V
60A
5.2 mOhm @ 20.7A, 4.5V
1.5V @ 250µA
105nC @ 10V
4000pF @ 10V
46W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
SP8J66TB1
Rohm Semiconductor

MOSFET 2P-CH 30V 9A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,576
Standard
30V
9A
-
-
-
-
-
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SP8K3FU6TB
Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存19,476
Logic Level Gate
30V
7A
24 mOhm @ 7A, 10V
2.5V @ 1mA
11.8nC @ 5V
600pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FF11MR12W1M1B11BOMA1
Infineon Technologies Industrial Power and Controls Americas

MOSFET MODULE HALF 1200V 100A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 100A
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 100A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 7950pF @ 800V
  • Power - Max: 20mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存3,504
Standard
1200V (1.2kV)
100A
11 mOhm @ 100A, 15V
5.55V @ 40mA
250nC @ 15V
7950pF @ 800V
20mW
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
IPG20N10S4L22AATMA1
Infineon Technologies

MOSFET 2N-CH 100V 20A TDSON-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
  • Power - Max: 60W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
封装: 8-PowerVDFN
库存5,856
Logic Level Gate
100V
20A
22 mOhm @ 17A, 10V
2.1V @ 25µA
27nC @ 10V
1755pF @ 25V
60W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
hot NTJD1155LT1G
ON Semiconductor

MOSFET N/P-CH 8V 1.3A SOT-363

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 400mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存1,457,844
Standard
8V
1.3A
175 mOhm @ 1.2A, 4.5V
1V @ 250µA
-
-
400mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
ALD110802PCL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.2V
  • Vgs(th) (Max) @ Id: 220mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
封装: 16-DIP (0.300", 7.62mm)
库存7,552
Standard
10.6V
-
500 Ohm @ 4.2V
220mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
ALD212900PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: 14 Ohm
  • Vgs(th) (Max) @ Id: 20mV @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
封装: 8-DIP (0.300", 7.62mm)
库存6,144
Logic Level Gate
10.6V
80mA
14 Ohm
20mV @ 20µA
-
30pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot IRF7342PBF
Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,416
Logic Level Gate
55V
3.4A
105 mOhm @ 3.4A, 10V
1V @ 250µA
38nC @ 10V
690pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
CAS325M12HM2
Cree/Wolfspeed

MOSFET 2N-CH 1200V 444A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 400A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 105mA
  • Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3000W
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存6,992
Silicon Carbide (SiC)
1200V (1.2kV)
444A (Tc)
4.3 mOhm @ 400A, 20V
4V @ 105mA
1127nC @ 20V
-
3000W
175°C (TJ)
-
Module
Module
PMDPB58UPE,115
Nexperia USA Inc.

MOSFET 2P-CH 20V 3.6A HUSON6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 67 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
  • Power - Max: 515mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
封装: 6-UDFN Exposed Pad
库存2,656
Logic Level Gate
20V
3.6A
67 mOhm @ 2A, 4.5V
950mV @ 250µA
9.5nC @ 4.5V
804pF @ 10V
515mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020-6
MTM684110LBF
Panasonic Electronic Components

MOSFET 2P-CH 12V 4.8A WMINI8-F1

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 1A, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: WMini8-F1
封装: 8-SMD, Flat Lead
库存2,096
Standard
12V
4.8A
32 mOhm @ 1A, 5V
1V @ 1mA
-
1400pF @ 10V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
WMini8-F1
hot QS6M3TR
Rohm Semiconductor

MOSFET N/P-CH 30V/20V 1.5A TSMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
封装: SOT-23-6 Thin, TSOT-23-6
库存541,212
Logic Level Gate
30V, 20V
1.5A
230 mOhm @ 1.5A, 4.5V
1.5V @ 1mA
1.6nC @ 4.5V
80pF @ 10V
1.25W
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
hot VT6K1T2CR
Rohm Semiconductor

MOSFET 2N-CH 20V 0.1A VMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
  • Power - Max: 120mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: VMT6
封装: 6-SMD, Flat Leads
库存69,324
Logic Level Gate, 1.2V Drive
20V
100mA
3.5 Ohm @ 100mA, 4.5V
1V @ 100µA
-
7.1pF @ 10V
120mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
VMT6
hot FDY2000PZ
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.35A SOT-563F

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
  • Power - Max: 446mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
封装: SOT-563, SOT-666
库存36,000
Logic Level Gate
20V
350mA
1.2 Ohm @ 350mA, 4.5V
1.5V @ 250µA
1.4nC @ 4.5V
100pF @ 10V
446mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
hot NTHD3102CT1G
ON Semiconductor

MOSFET N/P-CH 20V 4A/3.1A 1206A

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: ChipFET?
封装: 8-SMD, Flat Lead
库存1,189,320
Logic Level Gate
20V
4A, 3.1A
45 mOhm @ 4.4A, 4.5V
1.2V @ 250µA
7.9nC @ 4.5V
510pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
ChipFET?
DMHC3025LSD-13
Diodes Incorporated

MOSFET 2N/2P-CH 30V 8SO

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存59,394
Logic Level Gate
30V
6A, 4.2A
25 mOhm @ 5A, 10V
2V @ 250µA
11.7nC @ 10V
590pF @ 15V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NTUD3170NZT5G
ON Semiconductor

MOSFET 2N-CH 20V 0.22A SOT-963

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
  • Power - Max: 125mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
封装: SOT-963
库存703,560
Logic Level Gate
20V
220mA
1.5 Ohm @ 100mA, 4.5V
1V @ 250µA
-
12.5pF @ 15V
125mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963