页 90 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
ECH8667-TL-HX	ON Semiconductor	MOSFET 2P-CH 30V 5.5A ECH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	封装: 8-SMD, Flat Lead	库存5,664	-	-	-	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	8-ECH
PMDPB42UN,115	NXP	MOSFET 2N-CH 20V 3.9A HUSON6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 10V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	封装: 6-UDFN Exposed Pad	库存198,600	Logic Level Gate	20V	3.9A	50 mOhm @ 3.9A, 4.5V	1V @ 250µA	3.5nC @ 4.5V	185pF @ 10V	510mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
NTMD6N04R2G	ON Semiconductor	MOSFET 2N-CH 40V 4.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Power - Max: 1.29W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存377,568	Logic Level Gate	40V	4.6A	34 mOhm @ 5.8A, 10V	3V @ 250µA	30nC @ 10V	900pF @ 32V	1.29W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI7904DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 5.3A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 935µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存5,088	Logic Level Gate	20V	5.3A	30 mOhm @ 7.7A, 4.5V	1V @ 935µA	15nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI4920DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,080	Logic Level Gate	30V	-	25 mOhm @ 6.9A, 10V	1V @ 250µA (Min)	23nC @ 5V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTZD3156CT1G	ON Semiconductor	MOSFET N/P-CH 20V SOT-563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存6,208	Logic Level Gate	20V	540mA, 430mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	72pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SI1035X-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V SOT563F FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存3,088,776	Logic Level Gate	20V	180mA, 145mA	5 Ohm @ 200mA, 4.5V	400mV @ 250µA (Min)	0.75nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
FDW2510NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 6.4A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.4A Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存29,880	Logic Level Gate	20V	6.4A	24 mOhm @ 6.4A, 4.5V	1.5V @ 250µA	12nC @ 4.5V	870pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SP8J1TB	Rohm Semiconductor	MOSFET 2P-CH 30V 5A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存381,144	Logic Level Gate	30V	5A	42 mOhm @ 5A, 10V	2.5V @ 1mA	16nC @ 5V	1400pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NDS9943	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V 3A/2.8A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A, 2.8A Rds On (Max) @ Id, Vgs: 125 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,608	Logic Level Gate	20V	3A, 2.8A	125 mOhm @ 3A, 10V	-	27nC @ 10V	525pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM50AM24SCG	Microsemi Corporation	MOSFET 2N-CH 500V 150A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存3,120	Silicon Carbide (SiC)	500V	150A	28 mOhm @ 75A, 10V	5V @ 6mA	434nC @ 10V	19600pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
NVMFD5875NLT3G	ON Semiconductor	MOSFET 2N-CH 60V 7A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power - Max: 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	封装: 8-PowerTDFN	库存6,496	Logic Level Gate	60V	7A	33 mOhm @ 7.5A, 10V	3V @ 250µA	20nC @ 10V	540pF @ 25V	3.2W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
QS8K21TR	Rohm Semiconductor	MOSFET 2N-CH 45V 4A TSMT8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Power - Max: 550mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封装: 8-SMD, Flat Lead	库存4,608	Logic Level Gate	45V	4A	53 mOhm @ 4A, 10V	2.5V @ 1mA	5.4nC @ 5V	460pF @ 10V	550mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
AO6808	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 4.6A 6TSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封装: SC-74, SOT-457	库存325,176	Logic Level Gate	20V	4.6A	23 mOhm @ 6A, 4.5V	1V @ 250µA	21nC @ 10V	780pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
CSD87334Q3DT	Texas Instruments	MOSFET 2N-CH 30V 20A 8SON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	封装: 8-PowerTDFN	库存5,600	Standard	30V	-	6 mOhm @ 12A, 8V	1.2V @ 250µA	8.3nC @ 4.5V	1260pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
SSM6L09FUTE85LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 0.4A/0.2A US6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V Vgs(th) (Max) @ Id: 1.8V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存3,728	Logic Level Gate	30V	400mA, 200mA	700 mOhm @ 200MA, 10V	1.8V @ 100µA	-	20pF @ 5V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
DMG1026UV-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.41A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 410mA Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V Power - Max: 580mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存144,000	Logic Level Gate	60V	410mA	1.8 Ohm @ 500mA, 10V	1.8V @ 250µA	0.45nC @ 10V	32pF @ 25V	580mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMG1029SV-7	Diodes Incorporated	MOSFET N/P-CH 60V SOT563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存6,976	Logic Level Gate	60V	500mA, 360mA	1.7 Ohm @ 500mA, 10V	2.5V @ 250µA	0.3nC @ 4.5V	30pF @ 25V	450mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
ALD1107PBL	Advanced Linear Devices Inc.	MOSFET 4P-CH 10.6V 14DIP FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	封装: 14-DIP (0.300", 7.62mm)	库存12,444	Standard	10.6V	-	1800 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-PDIP
IRF7304TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 4.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存49,428	Logic Level Gate	20V	4.3A	90 mOhm @ 2.2A, 4.5V	700mV @ 250µA	22nC @ 4.5V	610pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMCXB1000UEZ	Nexperia USA Inc.	MOSFET ARRAY N/PCH 30V DFN1010B6 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta) Rds On (Max) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V Power - Max: 285mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	封装: 6-XFDFN Exposed Pad	库存6,240	Standard	30V	590mA (Ta), 410mA (Ta)	670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V	950mV @ 250µA	1.05nC @ 4.5V, 1.2nC @ 4.5V	30.3pF @ 15V, 43.2pF @ 15V	285mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
SQJ960EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 8A FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存2,576	Logic Level Gate	60V	8A	36 mOhm @ 5.3A, 10V	2.5V @ 250µA	20nC @ 10V	735pF @ 25V	34W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
FDMC8097AC	Fairchild/ON Semiconductor	MOSFET N/P-CH 150V FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	封装: 8-PowerWDFN	库存2,240	Standard	150V	2.4A (Ta), 900mA (Tc)	155 mOhm @ 2.4A, 10V	4V @ 250µA	6.2nC @ 10V	395pF @ 75V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
ZXMHC10A07N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 100V 8-SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 800mA, 680mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V Power - Max: 870mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存10,836	Standard	100V	800mA, 680mA	700 mOhm @ 1.5A, 10V	4V @ 250µA	2.9nC @ 10V	138pF @ 60V	870mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SQJ968EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 60V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc) Rds On (Max) @ Id, Vgs: 33.6 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 714pF @ 30V Power - Max: 42W (Tc) Operating Temperature: -55°C ~ 175°C (TA) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存7,824	Standard	60V	23.5A (Tc)	33.6 mOhm @ 4.8A, 10V	2.5V @ 250µA	18.5nC @ 10V	714pF @ 30V	42W (Tc)	-55°C ~ 175°C (TA)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
CMLDM8002AG TR	Central Semiconductor Corp	MOSFET 2P-CH 50V 0.28A SOT563 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存5,872	Logic Level Gate	50V	280mA	2.5 Ohm @ 500mA, 10V	2.5V @ 250µA	0.72nC @ 4.5V	70pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMP4047SSD-13	Diodes Incorporated	MOSFET 2P-CH 40V 5.1A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存25,428	Logic Level Gate	40V	5.1A	45 mOhm @ 4.4A, 10V	3V @ 250µA	21.5nC @ 10V	1154pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7998DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 25A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A, 30A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power - Max: 22W, 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存6,108	Logic Level Gate	30V	25A, 30A	9.3 mOhm @ 15A, 10V	2.5V @ 250µA	26nC @ 10V	1100pF @ 15V	22W, 40W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
DMG9926USD-13	Diodes Incorporated	MOSFET 2N-CH 20V 8A SOP8L FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,968	Logic Level Gate	20V	8A	24 mOhm @ 8.2A, 4.5V	900mV @ 250µA	8.8nC @ 4.5V	867pF @ 15V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SI5902BDC-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 3.12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存324,012	Logic Level Gate	30V	4A	65 mOhm @ 3.1A, 10V	3V @ 250µA	7nC @ 10V	220pF @ 15V	3.12W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?

ECH8667-TL-HX

ON Semiconductor

MOSFET 2P-CH 30V 5.5A ECH8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

封装: 8-SMD, Flat Lead

库存5,664

-

Surface Mount

8-SMD, Flat Lead

8-ECH

PMDPB42UN,115

NXP

MOSFET 2N-CH 20V 3.9A HUSON6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 10V
Power - Max: 510mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

封装: 6-UDFN Exposed Pad

库存198,600

Logic Level Gate

20V

3.9A

50 mOhm @ 3.9A, 4.5V

1V @ 250µA

3.5nC @ 4.5V

185pF @ 10V

510mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

NTMD6N04R2G

ON Semiconductor

MOSFET 2N-CH 40V 4.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Power - Max: 1.29W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存377,568

Logic Level Gate

40V

4.6A

34 mOhm @ 5.8A, 10V

3V @ 250µA

30nC @ 10V

900pF @ 32V

1.29W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI7904DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 5.3A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 935µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存5,088

Logic Level Gate

20V

5.3A

30 mOhm @ 7.7A, 4.5V

1V @ 935µA

15nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI4920DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,080

Logic Level Gate

30V

-

25 mOhm @ 6.9A, 10V

1V @ 250µA (Min)

23nC @ 5V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTZD3156CT1G

ON Semiconductor

MOSFET N/P-CH 20V SOT-563

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存6,208

Logic Level Gate

20V

540mA, 430mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

72pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SI1035X-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V SOT563F

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存3,088,776

Logic Level Gate

20V

180mA, 145mA

5 Ohm @ 200mA, 4.5V

400mV @ 250µA (Min)

0.75nC @ 4.5V

-

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

FDW2510NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6.4A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.4A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存29,880

Logic Level Gate

20V

6.4A

24 mOhm @ 6.4A, 4.5V

1.5V @ 250µA

12nC @ 4.5V

870pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SP8J1TB

Rohm Semiconductor

MOSFET 2P-CH 30V 5A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存381,144

Logic Level Gate

30V

5A

42 mOhm @ 5A, 10V

2.5V @ 1mA

16nC @ 5V

1400pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NDS9943

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 3A/2.8A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.8A
Rds On (Max) @ Id, Vgs: 125 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,608

Logic Level Gate

20V

3A, 2.8A

125 mOhm @ 3A, 10V

-

27nC @ 10V

525pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM50AM24SCG

Microsemi Corporation

MOSFET 2N-CH 500V 150A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存3,120

Silicon Carbide (SiC)

500V

150A

28 mOhm @ 75A, 10V

5V @ 6mA

434nC @ 10V

19600pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

NVMFD5875NLT3G

ON Semiconductor

MOSFET 2N-CH 60V 7A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

封装: 8-PowerTDFN

库存6,496

Logic Level Gate

60V

7A

33 mOhm @ 7.5A, 10V

3V @ 250µA

20nC @ 10V

540pF @ 25V

3.2W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

QS8K21TR

Rohm Semiconductor

MOSFET 2N-CH 45V 4A TSMT8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Power - Max: 550mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封装: 8-SMD, Flat Lead

库存4,608

Logic Level Gate

45V

4A

53 mOhm @ 4A, 10V

2.5V @ 1mA

5.4nC @ 5V

460pF @ 10V

550mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

AO6808

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4.6A 6TSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封装: SC-74, SOT-457

库存325,176

Logic Level Gate

20V

4.6A

23 mOhm @ 6A, 4.5V

1V @ 250µA

21nC @ 10V

780pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

CSD87334Q3DT

Texas Instruments

MOSFET 2N-CH 30V 20A 8SON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON (3.3x3.3)

封装: 8-PowerTDFN

库存5,600

Standard

30V

-

6 mOhm @ 12A, 8V

1.2V @ 250µA

8.3nC @ 4.5V

1260pF @ 15V

6W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-VSON (3.3x3.3)

SSM6L09FUTE85LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 0.4A/0.2A US6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存3,728

Logic Level Gate

30V

400mA, 200mA

700 mOhm @ 200MA, 10V

1.8V @ 100µA

-

20pF @ 5V

300mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

DMG1026UV-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.41A SOT-563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 410mA
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
Power - Max: 580mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存144,000

Logic Level Gate

60V

410mA

1.8 Ohm @ 500mA, 10V

1.8V @ 250µA

0.45nC @ 10V

32pF @ 25V

580mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMG1029SV-7

Diodes Incorporated

MOSFET N/P-CH 60V SOT563

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA, 360mA
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 450mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存6,976

Logic Level Gate

60V

500mA, 360mA

1.7 Ohm @ 500mA, 10V

2.5V @ 250µA

0.3nC @ 4.5V

30pF @ 25V

450mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

ALD1107PBL

Advanced Linear Devices Inc.

MOSFET 4P-CH 10.6V 14DIP

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-PDIP

封装: 14-DIP (0.300", 7.62mm)

库存12,444

Standard

10.6V

-

1800 Ohm @ 5V

1V @ 1µA

-

3pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

14-PDIP

IRF7304TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 4.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存49,428

Logic Level Gate

20V

4.3A

90 mOhm @ 2.2A, 4.5V

700mV @ 250µA

22nC @ 4.5V

610pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

PMCXB1000UEZ

Nexperia USA Inc.

MOSFET ARRAY N/PCH 30V DFN1010B6

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta)
Rds On (Max) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V
Power - Max: 285mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6

封装: 6-XFDFN Exposed Pad

库存6,240

Standard

30V

590mA (Ta), 410mA (Ta)

670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V

950mV @ 250µA

1.05nC @ 4.5V, 1.2nC @ 4.5V

30.3pF @ 15V, 43.2pF @ 15V

285mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

DFN1010B-6

SQJ960EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 8A

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存2,576

Logic Level Gate

60V

8A

36 mOhm @ 5.3A, 10V

2.5V @ 250µA

20nC @ 10V

735pF @ 25V

34W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

FDMC8097AC

Fairchild/ON Semiconductor

MOSFET N/P-CH 150V

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), 900mA (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 75V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

封装: 8-PowerWDFN

库存2,240

Standard

150V

2.4A (Ta), 900mA (Tc)

155 mOhm @ 2.4A, 10V

4V @ 250µA

6.2nC @ 10V

395pF @ 75V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

ZXMHC10A07N8TC

Diodes Incorporated

MOSFET 2N/2P-CH 100V 8-SOIC

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 800mA, 680mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V
Power - Max: 870mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存10,836

Standard

100V

800mA, 680mA

700 mOhm @ 1.5A, 10V

4V @ 250µA

2.9nC @ 10V

138pF @ 60V

870mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SQJ968EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 60V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 33.6 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 714pF @ 30V
Power - Max: 42W (Tc)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存7,824

Standard

60V

23.5A (Tc)

33.6 mOhm @ 4.8A, 10V

2.5V @ 250µA

18.5nC @ 10V

714pF @ 30V

42W (Tc)

-55°C ~ 175°C (TA)

Surface Mount

PowerPAK? SO-8 Dual

CMLDM8002AG TR

Central Semiconductor Corp

MOSFET 2P-CH 50V 0.28A SOT563

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存5,872

Logic Level Gate

50V

280mA

2.5 Ohm @ 500mA, 10V

2.5V @ 250µA

0.72nC @ 4.5V

70pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMP4047SSD-13

Diodes Incorporated

MOSFET 2P-CH 40V 5.1A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存25,428

Logic Level Gate

40V

5.1A

45 mOhm @ 4.4A, 10V

3V @ 250µA

21.5nC @ 10V

1154pF @ 20V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7998DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 25A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A, 30A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power - Max: 22W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存6,108

Logic Level Gate

30V

25A, 30A

9.3 mOhm @ 15A, 10V

2.5V @ 250µA

26nC @ 10V

1100pF @ 15V

22W, 40W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

DMG9926USD-13

Diodes Incorporated

MOSFET 2N-CH 20V 8A SOP8L

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,968

Logic Level Gate

20V

8A

24 mOhm @ 8.2A, 4.5V

900mV @ 250µA

8.8nC @ 4.5V

867pF @ 15V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SI5902BDC-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4A 1206-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 3.12W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存324,012

Logic Level Gate

30V

4A

65 mOhm @ 3.1A, 10V

3V @ 250µA

7nC @ 10V

220pF @ 15V

3.12W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?