页 262 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

记录 52,788
页  262/1,760
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零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GP10G-013M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存5,312
-
-
-
-
-
-
-
-
-
-
-
hot SS5P9HM3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 90V TO-277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15µA @ 90V
  • Capacitance @ Vr, F: 130pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存159,600
90V
5A
880mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
15µA @ 90V
130pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
R5100810XXWA
Powerex Inc.

DIODE GEN PURP 800V 100A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 7µs
  • Current - Reverse Leakage @ Vr: 30mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: DO-205AA, DO-8, Stud
库存5,328
800V
100A
1.55V @ 470A
Standard Recovery >500ns, > 200mA (Io)
7µs
30mA @ 800V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
BAY73_T50R
Fairchild/ON Semiconductor

DIODE GEN PURP 125V 500MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1µs
  • Current - Reverse Leakage @ Vr: 5nA @ 100V
  • Capacitance @ Vr, F: 8pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
封装: DO-204AH, DO-35, Axial
库存6,176
125V
500mA
1V @ 200mA
Standard Recovery >500ns, > 200mA (Io)
1µs
5nA @ 100V
8pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
R6031435ESYA
Powerex Inc.

DIODE GEN PURP 1.4KV 350A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 350A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -45°C ~ 150°C
封装: DO-205AB, DO-9, Stud
库存5,328
1400V
350A
1.5V @ 800A
Standard Recovery >500ns, > 200mA (Io)
2µs
50mA @ 1400V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-45°C ~ 150°C
A170RPD
Powerex Inc.

DIODE GEN PURP 1.4KV 100A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
封装: DO-205AA, DO-8, Stud
库存6,624
1400V
100A
1.3V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
20mA @ 1400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 200°C
1N5187
Microsemi Corporation

DIODE GEN PURP 200V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: B, Axial
库存7,808
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
2µA @ 200V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
VS-20ETS12FP-M3
Vishay Semiconductor Diodes Division

DIODE INPUT 20A TO-220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FP
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-220-2 Full Pack
库存4,688
1200V
20A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
100µA @ 1200V
-
Through Hole
TO-220-2 Full Pack
TO-220FP
-40°C ~ 150°C
hot DSEP8-06A
IXYS

DIODE GEN PURP 600V 10A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 60µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-220-2
库存82,644
600V
10A
2.1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
60µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
UFS320JE3/TR13
Microsemi Corporation

DIODE GEN PURP 200V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-214AB, SMC
库存4,768
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
hot UH8JT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-220-2
库存74,340
600V
8A
3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
5µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
BYM07-400-E3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 500MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-213AA (Glass)
库存5,760
400V
500mA
1.35V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
7pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
hot MBRB1645-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,808
45V
16A
630mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 45V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
-65°C ~ 150°C
SS13HE
Fairchild/ON Semiconductor

DIODE SCHOTTKY 30V 1A SOD323HE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5.6ns
  • Current - Reverse Leakage @ Vr: 50µA @ 30V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: SOD-323HE
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: 2-SMD, Flat Lead
库存52,800
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
5.6ns
50µA @ 30V
55pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
SOD-323HE
-55°C ~ 150°C
VS-5EWL06FNTR-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 145ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存34,266
600V
5A
1.2V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
145ns
5µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
hot BAT54WT-TP
Micro Commercial Co

DIODE SCHOTTKY 30V 200MA SOT323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: SC-70, SOT-323
库存72,000
30V
200mA (DC)
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-55°C ~ 125°C
hot 1N5819-T
Diodes Incorporated

DIODE SCHOTTKY 40V 1A DO41

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 125°C
封装: DO-204AL, DO-41, Axial
库存1,971,600
40V
1A
600mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 125°C
R42140
Microchip Technology

DIODE GP REV 1.4KV 125A DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
Request a Quote
1400 V
125A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 1400 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
PMEG40T30ER-QX
Nexperia USA Inc.

DIODE SCHOTTKY 40V 3A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 18 ns
  • Current - Reverse Leakage @ Vr: 28 µA @ 40 V
  • Capacitance @ Vr, F: 560pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: 175°C
封装: -
库存17,883
40 V
3A
525 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
18 ns
28 µA @ 40 V
560pF @ 1V, 1MHz
Surface Mount
SOD-123W
SOD-123W
175°C
JANTXV1N5615US-TR
Microchip Technology

DIODE GEN PURP 200V 1A D-5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 600 V
  • Capacitance @ Vr, F: 45pF @ 12V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
Request a Quote
200 V
1A
1.6 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
500 nA @ 600 V
45pF @ 12V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
USD345CHR2
Microchip Technology

DIODE SCHOTTKY 45V 30A TO204AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AD (TO-3)
  • Operating Temperature - Junction: 175°C (Max)
封装: -
Request a Quote
45 V
30A
660 mV @ 20 A
No Recovery Time > 500mA (Io)
-
10 mA @ 45 V
-
Through Hole
TO-204AA, TO-3
TO-204AD (TO-3)
175°C (Max)
VSHS15A08-TE16L3
KYOCERA AVX

DIODE SCHOTTKY 80V 15A TO-277

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 760 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 80 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
80 V
15A
760 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 80 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277
-40°C ~ 150°C
NRTS10100PFST3G
onsemi

DIODE SCHOTTKY 100V 10A TO277-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Capacitance @ Vr, F: 760pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存11,487
100 V
10A
780 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 100 V
760pF @ 1V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277-3
-55°C ~ 175°C
CLL3595-BK
Central Semiconductor Corp

DIODE GEN PURP 150V 150MA SOD80

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 1 nA @ 125 V
  • Capacitance @ Vr, F: 8pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
Request a Quote
150 V
150mA
1 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
3 µs
1 nA @ 125 V
8pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
SOD-80
-65°C ~ 200°C
MBR10100_T0_00001
Panjit International Inc.

DIODE SCHOTTKY 100V 10A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
库存6,000
100 V
10A
800 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 100 V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
US1MF
MDD

DIODE GEN PURP 1KV 1A SMAF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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1000 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 1000 V
15pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
SMAF
-55°C ~ 150°C
JANTX1N3172R
Microchip Technology

DIODE GP 800V 300A DO205AB DO9

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB (DO-9)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
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800 V
300A
1.55 V @ 940 A
Standard Recovery >500ns, > 200mA (Io)
-
10 mA @ 800 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-205AB (DO-9)
-65°C ~ 200°C
SDT2L40CP3-7B
Diodes Incorporated

DIODE SCHOTT 40V 2A X3-DSN1608-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 40 V
  • Capacitance @ Vr, F: 285pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0603 (1608 Metric)
  • Supplier Device Package: X3-DSN1608-2
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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40 V
2A
520 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 40 V
285pF @ 4V, 1MHz
Surface Mount
0603 (1608 Metric)
X3-DSN1608-2
-55°C ~ 150°C
NRTS12100PFST3G
onsemi

DIODE SCHOTTKY 100V 12A TO277-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120 µA @ 100 V
  • Capacitance @ Vr, F: 930pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
100 V
12A
800 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
120 µA @ 100 V
930pF @ 1V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277-3
-55°C ~ 175°C
CMR3-04-TR13-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 400V 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
库存612
400 V
3A
1.2 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 400 V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C