页 260 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
PR1504S-A	Diodes Incorporated	DIODE GEN PURP 400V 1.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存2,560	400V	1.5A	1.2V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SS23HE3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-214AA, SMB	库存6,480	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 125°C
1N4004	ON Semiconductor	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存6,850,224	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
MUR480ERL	ON Semiconductor	DIODE GEN PURP 800V 4A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 25µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-201AD, Axial	库存2,128	800V	4A	1.85V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	25µA @ 800V	-	Through Hole	DO-201AD, Axial	Axial	-65°C ~ 175°C
R7222207CSOO	Powerex Inc.	DIODE MODULE 2.2KV 700A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 700A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 50mA @ 2200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封装: DO-200AB, B-PUK	库存4,896	2200V	700A	1.65V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	5µs	50mA @ 2200V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
R5011610XXWA	Powerex Inc.	DIODE GEN PURP 1.6KV 100A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 30mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-205AA, DO-8, Stud	库存7,168	1600V	100A	1.55V @ 470A	Standard Recovery >500ns, > 200mA (Io)	7µs	30mA @ 1600V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
VS-20ETF02STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 20A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,904	200V	20A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-40°C ~ 150°C
VS-8ETH03STRRPBF	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 8A 300V D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 27ns Current - Reverse Leakage @ Vr: 20µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存2,032	300V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	27ns	20µA @ 300V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
VF20150SG-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 150V 20A ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-3 Full Pack, Isolated Tab	库存6,816	150V	20A	1.6V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 150V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
GP02-40-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 4KV 250MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 3V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 4000V Capacitance @ Vr, F: 3pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存4,368	4000V	250mA	3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 4000V	3pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
CURC305-G	Comchip Technology	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: 150°C (Max)	封装: DO-214AB, SMC	库存4,848	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	150°C (Max)
SS115L M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存2,112	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAV103,135	Nexperia USA Inc.	DIODE GEN PURP 200V 250MA LLDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80C Operating Temperature - Junction: 175°C (Max)	封装: DO-213AC, MINI-MELF, SOD-80	库存4,848	200V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	5pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80C	175°C (Max)
VS-8TQ100SPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 100V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存8,088	100V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 100V	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
FSV12150V	Fairchild/ON Semiconductor	DIODE SCHOTTKY 150V 12A TO277-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 820mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-277, 3-PowerDFN	库存6,688	150V	12A	820mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 150V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 150°C
STTH2002DI	STMicroelectronics	DIODE GEN PURP 200V 20A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Supplier Device Package: TO-220AC ins Operating Temperature - Junction: 175°C (Max)	封装: TO-220-2 Insulated, TO-220AC	库存4,560	200V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 200V	-	Through Hole	TO-220-2 Insulated, TO-220AC	TO-220AC ins	175°C (Max)
ES1C-TP	Micro Commercial Co	DIODE GEN PURP 150V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (HSMA) Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	150 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 150 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (HSMA)	-50°C ~ 150°C
B130-13-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	30 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	110pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
SDS065J010C3-ISATH	Luminus Devices Inc.	DIODE 650V-10A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 650 V Capacitance @ Vr, F: 556pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	650 V	30A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	556pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2L	-55°C ~ 175°C
S1MF_R1_00001	Panjit International Inc.	DIODE GEN PURP 1KV 1A SMBF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	9pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
GE1304	Harris Corporation	DIODE GEN PURP 200V 6A AL-4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204, Axial Supplier Device Package: AL-4 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	6A	975 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	100pF @ 4V, 1MHz	Through Hole	DO-204, Axial	AL-4	-65°C ~ 175°C
MBR1060_T0_00001	Panjit International Inc.	DIODE SCHOTTKY 60V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	封装: -	库存5,253	60 V	10A	750 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 60 V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
G10100F4	Diodes Incorporated	DIODE SCHOTTKY 100V 10A F4 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
20F20	Solid State Inc.	DIODE GEN PURP 200V 20A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	200 V	20A	1.2 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
B345BE-13	Diodes Incorporated	DIODE SCHOTTKY 45V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 45 V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	45 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 45 V	140pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
SM5818	Diotec Semiconductor	SCHOTTKY MELF 30V 1A 150C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF DO-213AB Operating Temperature - Junction: -50°C ~ 150°C	封装: -	Request a Quote	30 V	1A	875 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB	-50°C ~ 150°C
SF51-TP	Micro Commercial Co	DIODE GEN PURP 50V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	50 V	5A	950 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	45pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
JANTX1N3164IL	Microchip Technology	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N5818T-R	EIC SEMICONDUCTOR INC.	DIODE SCHOTTKY 30V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 30 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	30 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	110pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
JANTXV1N3295R	Microchip Technology	DIODE GEN PURP 100A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	-	100A	1.55 V @ 310 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 1000 V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C

PR1504S-A

Diodes Incorporated

DIODE GEN PURP 400V 1.5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存2,560

400V

1.5A

1.2V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

SS23HE3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-214AA, SMB

库存6,480

30V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 30V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 125°C

1N4004

ON Semiconductor

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存6,850,224

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

MUR480ERL

ON Semiconductor

DIODE GEN PURP 800V 4A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-201AD, Axial

库存2,128

800V

4A

1.85V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

25µA @ 800V

-

Through Hole

DO-201AD, Axial

Axial

-65°C ~ 175°C

R7222207CSOO

Powerex Inc.

DIODE MODULE 2.2KV 700A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 700A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 50mA @ 2200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封装: DO-200AB, B-PUK

库存4,896

2200V

700A

1.65V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

5µs

50mA @ 2200V

-

Chassis Mount

DO-200AB, B-PUK

-

R5011610XXWA

Powerex Inc.

DIODE GEN PURP 1.6KV 100A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7µs
Current - Reverse Leakage @ Vr: 30mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-205AA, DO-8, Stud

库存7,168

1600V

100A

1.55V @ 470A

Standard Recovery >500ns, > 200mA (Io)

7µs

30mA @ 1600V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

VS-20ETF02STRL-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 20A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,904

200V

20A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

160ns

100µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-40°C ~ 150°C

VS-8ETH03STRRPBF

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A 300V D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27ns
Current - Reverse Leakage @ Vr: 20µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,032

300V

8A

1.25V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

27ns

20µA @ 300V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

VF20150SG-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 20A ITO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-3 Full Pack, Isolated Tab

库存6,816

150V

20A

1.6V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 150V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-55°C ~ 150°C

GP02-40-E3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 4KV 250MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 4000V
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存4,368

4000V

250mA

3V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 4000V

3pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

CURC305-G

Comchip Technology

DIODE GEN PURP 600V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: 150°C (Max)

封装: DO-214AB, SMC

库存4,848

600V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 600V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

150°C (Max)

SS115L M2G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存2,112

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 150V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

BAV103,135

Nexperia USA Inc.

DIODE GEN PURP 200V 250MA LLDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80C
Operating Temperature - Junction: 175°C (Max)

封装: DO-213AC, MINI-MELF, SOD-80

库存4,848

200V

250mA (DC)

1.25V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 200V

5pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80C

175°C (Max)

VS-8TQ100SPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550µA @ 100V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存8,088

100V

8A

720mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

550µA @ 100V

500pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

FSV12150V

Fairchild/ON Semiconductor

DIODE SCHOTTKY 150V 12A TO277-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 820mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-277, 3-PowerDFN

库存6,688

150V

12A

820mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

30µA @ 150V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277-3

-55°C ~ 150°C

STTH2002DI

STMicroelectronics

DIODE GEN PURP 200V 20A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: 175°C (Max)

封装: TO-220-2 Insulated, TO-220AC

库存4,560

200V

20A

1.1V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

10µA @ 200V

-

Through Hole

TO-220-2 Insulated, TO-220AC

TO-220AC ins

175°C (Max)

ES1C-TP

Micro Commercial Co

DIODE GEN PURP 150V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (HSMA)
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

Request a Quote

150 V

1A

-

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 150 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (HSMA)

-50°C ~ 150°C

B130-13-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

30 V

1A

500 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 30 V

110pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

SDS065J010C3-ISATH

Luminus Devices Inc.

DIODE 650V-10A TO220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Capacitance @ Vr, F: 556pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

650 V

30A

1.5 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

30 µA @ 650 V

556pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220-2L

-55°C ~ 175°C

S1MF_R1_00001

Panjit International Inc.

DIODE GEN PURP 1KV 1A SMBF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

1000 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 1000 V

9pF @ 4V, 1MHz

Surface Mount

DO-221AA, SMB Flat Leads

SMBF

-55°C ~ 150°C

GE1304

Harris Corporation

DIODE GEN PURP 200V 6A AL-4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204, Axial
Supplier Device Package: AL-4
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

6A

975 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

100pF @ 4V, 1MHz

Through Hole

DO-204, Axial

AL-4

-65°C ~ 175°C

MBR1060_T0_00001

Panjit International Inc.

DIODE SCHOTTKY 60V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

库存5,253

60 V

10A

750 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 60 V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 175°C

G10100F4

Diodes Incorporated

DIODE SCHOTTKY 100V 10A F4

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

20F20

Solid State Inc.

DIODE GEN PURP 200V 20A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

200 V

20A

1.2 V @ 20 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C

B345BE-13

Diodes Incorporated

DIODE SCHOTTKY 45V 3A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

45 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 45 V

140pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

SM5818

Diotec Semiconductor

SCHOTTKY MELF 30V 1A 150C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 150°C

封装: -

Request a Quote

30 V

1A

875 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 30 V

-

Surface Mount

DO-213AB, MELF

MELF DO-213AB

-50°C ~ 150°C

SF51-TP

Micro Commercial Co

DIODE GEN PURP 50V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

50 V

5A

950 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 50 V

45pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

JANTX1N3164IL

Microchip Technology

RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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-

1N5818T-R

EIC SEMICONDUCTOR INC.

DIODE SCHOTTKY 30V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

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30 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 30 V

110pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 125°C

JANTXV1N3295R

Microchip Technology

DIODE GEN PURP 100A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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-

100A

1.55 V @ 310 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 1000 V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C